4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
Integrated LNA, Mixer and LO Buffer Amplifier
1.8 dB Noise Figure
13.0 dB Conversion Gain
4x4mm QFN Package
100% RF, DC and NF Testing
Features
Absolute Maximum Ratings1
Supply Voltage (Vdd)
Supply Current (Idd)
Gate Voltage (Vgg)
Max Power Dissipation (Pdiss)
RF Input Power (Pin)
LO Input Power (Pin)
Operating Temperature (Ta)
Storage Temperature (Tstg)
Channel Temperature (Tch)
+5.0 VDC
180 mA
-3 V
750 mW
+14 dBm
+15 dBm
-55 to +85 ºC
-65 to +150 ºC
-40 to MTTF Graph2
Page 1 of 7
(1) Operation of this device above any one of these parameters
may cause permanent damage
(2) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (RF/LO)
Frequency Range (IF)
Conversion Gain (CG)
Noise Figure (NF)
Input Third Order Intercept (IIP3)
Image Rejection
LO Input Drive
LO/RF Isolation
RF Input Return Loss
LO Input Return Loss
IF Return Loss
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)*
Gate Bias Voltage (Vg4)**
Supply Current (Id1)
Supply Current (Id2)
Supply Current (Id3)
Supply Current (Ig4)
Units
GHz
GHz
dB
dB
dBm
dBc
dBm
dB
dB
dB
dB
VDC
VDC
VDC
mA
mA
mA
mA
Min.
4.5
DC
12.0
15.0
-1.2
-
Typ.
-
-
13.0
1.8
+3.0
20.0
+5.0
-50
10
10
10
+4.0
-0.3
-2.0
25
45
60
2
Max.
10.5
3.5
15.0
+4.5
0.2
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has
a noise figure of 1.8 dB and 13.0 dB conversion gain across
the band. The device integrates an LNA, image reject mixer
and LO buffer amplifier within a fully molded 4x4mm QFN
package. The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the
image frequency. I and Q mixer outputs are provided and an
external 90 degree hybrid is required to select the desired
sideband. This device uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity. This device is well suited for Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
General Description
January 2008 - Rev 28-Jan-08
*Vg1,2 and 3 are adjusted to achieve constant drain current regulation.
**Vg4 provides mixer bias and is fixed at -2.0V.
R1011-QH
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2008 - Rev 28-Jan-08
Receiver Measurements
Page 2 of 7
4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
R1011-QH
XR1011-QH: USB Conversion Gain (dB)
4V @ 130mA, PLO=5dBm
0
2
4
6
8
10
12
14
16
18
20
4 5 6 7 8 9 101112
RF USB (GHz) [IF=1GHz]
USB Conversion Gain (dB)
USB +25C
USB -40C
USB +80C
XR1011-QH: USB Conversion Gain (dB)
4V @ 130mA, PLO=5dBm
0
2
4
6
8
10
12
14
16
18
20
456789101112
RF LSB (GH z) [IF=1GHz]
USB Conversion Gain (dB)
LSB +25C
LSB -40C
LSB +80C
XR1011-QH: USB Noise Figure
4V @ 130mA, PLO=5dBm
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
4 5 6 7 8 9 10 11 12
RF USB (GHz) [IF=1GHz]
Noise Figure (dB)
+25C
-40C
+85C
XR1011-QH: USB Noise Figure
4V @ 130mA, PLO=5dBm
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
4 5 6 7 8 9 10 11 12
RF LSB (GHz ) [IF=1GHz]
Noise Figure (dB)
+25C
-40C
+85C
XR1011-QH: USB IIP3 (dBm).
4V @ 130mA, PLO=5dBm, RF = -18 dBm per Tone
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
456789101112
RF USB (GHz) [IF=1GHz]
IIP3 (dBm)
USB +25C
USB +80C
USB -40C
XR1011-QH: LSB IIP3 (dBm)
4V @ 130mA, PLO=5dBm, RF = -18 dBm per Tone
-10.0
-5.0
0.0
5.0
10.0
15.0
20.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0
RF LSB (GHz) [IF=1GHz]
IIP3 (dBm)
LSB +25C
LSB +80C
LSB -40C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2008 - Rev 28-Jan-08
Receiver Measurements (cont.)
Page 3 of 7
XR1011-QH : Conversion Gain (dB) vs IF (GHz) at LO=7.5 GHz
4V @ 130mA, PLO=5dBm
0
2
4
6
8
10
12
14
16
18
20
0.5 1.0 1.5 2.0 2.5 3.0
IF (GHz)
Conversion Gain (dB)
USB
LSB
XR1011-QH: LSB Conversion Gain
(
dB
)
vs. RF
(
GHz
)
.
4 V @ 130 mA
0
2
4
6
8
10
12
14
16
18
20
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
RF (GHz) [IF = 1 GHz]
LSB Conversion Gain (dB)
PLO = 3 dBm
PLO = 5 dBm
PLO = 7 dBm
XR1011-QH : Noise Figure (dB) vs IF (GHz) at LO=7.5 GHz
4V @ 130mA, PLO=5dBm
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
IF (GHz)
NF (dB)
USB +25C
LSB +25C
XR1011-QH: USB Conversion Gain (dB) vs. RF (GHz).
4 V @ 130 mA
0
2
4
6
8
10
12
14
16
18
20
55.566.577.588.599.510
RF (GHz) [IF = 1 GHz]
USB Conversion Gain (dB)
PLO = 3 dBm
PLO = 5 dBm
PLO = 7 dBm
XR1011-QH: LSB IIP3 (dBm) vs. RF (GHz).
4 V @ 130 mA
-4
-2
0
2
4
6
8
10
12
14
16
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
RF (GHz) [IF = 1 GHz]
LSB IIP3 (dBm)
PLO = 3 dBm
PLO = 5 dBm
PLO = 7 dBm
4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
R1011-QH
XR1011-QH: USB and LSB Image Rejection (dBc)
4V @ 130mA, PLO=5dBm
-40
-35
-30
-25
-20
-15
-10
-5
0
4 5 6 7 8 9 10 11 12
RF (GHz) [IF=1GHz]
Image Rejection (dBc)
LSB +25C
LSB -40C
LSB +80C
USB +25C
USB -40C
USB +80C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2008 - Rev 28-Jan-08
Receiver Measurements (cont.)
MxN Spurious Outputs
MTTF
LO Harmonics
Page 4 of 7
XR1011-QH: LO/RF Isolation (dB) vs. RF (GHz).
4V @ 130mA, PLO = 5dBm
-80
-70
-60
-50
-40
-30
-20
-10
0
5 7 9 1113151719212325
RF (GHz)
LO/RF Isolation (dB)
01234
0 - 33 38 49 61
1 30 0 71 74 -
2 66651780 72
397 105 79 30 79
4>110 >110 108 88 45
RF=7.5GHz @ -10dBm
LO=6.5GHz @ +5dBm
Data measured without 90deg hybrid
All values in dBc below IF power level
nLO
mRF
1234
4 53707088
5 57717964
6 54666764
7 50 102 61 81
8 49746167
9 51547170
10 50 45 72 80
11 48 40 62 64
12 53 42 64 48
LO = +5 dBm
Values in dBc relative to LO input level, measured at RF IN port
LO Freq
(
G
Hz)
nLO Spur, RF Port
XR1011-QH: MTTF (hours) vs. Backplate Temp (°C)
1.0E+05
1.0E+06
1.0E+07
1.0E+08
1.0E+09
1.0E+10
1.0E+11
1.0E+12
0 20 40 60 80 100 120 140
Backplate Temp (°C)
MTTF (hours)
MTTF is calculated from accelerated life-time data of single devices and
assumes an isothermal back-plate.
4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
R1011-QH
XR1011-QH: USB IIP3 (dBm) vs. RF (GHz).
4 V @ 130 mA
-4
-2
0
2
4
6
8
10
12
14
16
5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
RF (GHz) [IF = 1 GHz]
USB IIP3 (dBm)
PLO = 3 dBm
PLO = 5 dBm
PLO = 7 dBm
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2008 - Rev 28-Jan-08
Page 5 of 7
Package Dimensions / Layout
Functional Block Diagram
Pin Designations
Pin Number
2
5
9
12
13
14
15
17
18
19
22
1,3,4,6,7,8,10,
11,16,20,21,
23,24
Pin Name
IF1
IF2
RF
VG1
VD1
VG2
VD2
VG4
VD3
VG3
LO
N/C*
Pin Function
IF1 Output
IF2 Output
RF Input
Gate 1 Bias
Drain 1 Bias
Gate 2 Bias
Drain 2 Bias
Gate 4 Bias
Drain 3 Bias
Gate 3 Bias
LO Input
No Connect
Nominal Value
-0.3V
4.0V, 25 mA
-0.3V
4.0V, 45 mA
-2.0V, 2 mA
4.0V, 60 mA
-0.3V
+5.0 dBm
4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
R1011-QH
*It is recommended to externally ground all N/C pins.
1
2
3
4
22
21
20
19
16
15
14
13
7 8 9
10
IF1
NC
I
Q
BUF
LNA
IRM
5
6
11
12
17
18
23
24
NC
NC
NC
IF2
NC NC NC NCRF VG1
VD1
VG2
VD2
NC
VG4
VD3
VG3NCNCLO
NCNC
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2008 - Rev 28-Jan-08
Page 6 of 7
Recommended Board Layout
App Note [1] Biasing - As shown in the Pin Designations table, the device is operated by biasing VD1,2,3 at 4.0V with 25, 45, 60mA respectively.
Additionally, a fixed voltage bias of -2V is required for mixer bias. It is recommended to use active bias to keep the currents constant in order to
maintain the best performance over temperature. Depending on the supply voltage available and the power dissipation constraints, the bias circuit
may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current.
The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V.
Make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Board Layout - As shown in the board layout, it is recommended to provide 100pF decoupling caps as close to the bias pins as
possible, with additional 10µF decoupling caps.
Recommended Decoupling Capacitors: 100pF 0402,
10µF 0805
Recommend to externally ground all N/C pins
4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
R1011-QH
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
January 2008 - Rev 28-Jan-08
Page 7 of 7
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
• Do not ingest.
• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these
by-products are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this product. This product must be discarded in
accordance with methods specified by applicable hazardous waste procedures.
Electrostatic Sensitive Device -
Observe all necessary precautions when handling.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible
with high volume solder installation. Vacuum tools or other suitable pick and place equipment may be used to pick and place this
part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground
connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and
life of the product due to thermal stress.
Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental
requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant
components are form, fit and functional replacements for their non-RoHS equivalents. Lead plating of our RoHS compliant parts is
100% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as
well as higher temperature (260°C reflow) “Pb Free” processes.
Part Number for Ordering Description
XR1011-QH-0G00 Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in bulk quantity
XR1011-QH-0G0T Matte Tin plated RoHS compliant 4x4 24L QFN surface mount package in tape and reel
XR1011-QH-EV1 XR1011-QH evaluation board
Typical Reflow Profiles
Reflow Profile
Ramp Up Rate
Activation Time and Temperature
Time Above Melting Point
Max Peak Temperature
Time Within 5 ºC of Peak
Ramp Down Rate
SnPb
3-4 ºC/sec
60-120 sec @ 140-160 ºC
60-150 sec
240 ºC
10-20 sec
4-6 ºC/sec
Pb Free
3-4 ºC/sec
60-180 sec @ 170-200 ºC
60-150 sec
265 ºC
10-20 sec
4-6 ºC/sec
4.5-10.5 GHz GaAs Receiver
QFN, 4x4mm
R1011-QH
Caution: ESD Sensitive
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
