Specifications and information are subject to change without notice
WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com, www.TriQuint.com Page 1 of 9 May 2009
ECP203
2 Watt, High Linearity InGaP HBT Amplifier
Product Features
• 2300 – 2700 MHz
• 10 dB Gain @ 2450 MHz
• 9.5 dB Gain @ 2650 M Hz
• +32 dBm P1dB
• +46 dBm Output IP3
• Single Positive Supply (+5V)
• Lead-free/green/RoHS-compliant
SOIC-8 and 16pin 4mm QFN
packages
Applications
• WLAN / WiBro
• RFID
• DMB
• Fixed Wireless
Product Description
The ECP203 is a high dynamic range driver amplifier in
a low-cost surface mount package. The InGaP/GaAs
HBT is able to achieve high performance for various
narrowband-tuned application circuits with up to +46
dBm OIP3 and +32 dBm of compressed 1dB power. It
is housed in Lead-free/Green/RoHS-compliant SOIC-8
and 16-pin 4x4mm QFN packages. All devices are
100% RF and DC tested.
The ECP203 is targeted for use as a driver amplifier in
wireless infrastructure where high linearity and medium
power is required. An internal active bias allows the
ECP203 to maintain high linearity over temperature and
operate directly off a single +5V supply. This
combination makes the device an excellent candidate for
driver amplifier stages in wireless-LAN, digital
multimedia broadcast, or fixed wireless applications.
The device can also be used in next generation RFID
readers.
Functional Diagram
ECP203D
ECP203G
Specifications (1)
Parameter Units Min Typ Max
Operational Bandwidth MHz 2300 2700
Test Frequency MHz 2450
Gain dB 9 10
Input Return Loss dB 8.5
Output Return Loss dB 8.5
Output P1dB dBm +31 +32
Output IP3 (2) dBm +46
Noise Figure dB 6.3
Test Frequency MHz 2650
Gain dB 9.5
Output P1dB dBm +32
Output IP3 (2) dBm +46
Operating Current Range, Icc (3) mA 700 800 900
Device Voltage, Vcc V +5
1. Test conditions unless otherwise noted: 25 ºC, Vsupply = +5 V in tuned application circuit.
2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. This corresponds to the quiescent current or operating current under small-signal conditions into
the Vbias and RF out pins. It is expected that the current can increase by an additional 200 mA
at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that
Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15Ω. (ie. total
device current typically will be 822 mA.)
Absolute Maximum Rating
Parameter Rating
Storage Temperature -65 to +125 °C
RF Input Power (continuous) +28 dBm
Device Voltage +8 V
Device Current 1400 mA
Device Power 8 W
Thermal Resistance, Rth 17.5 °C/W
Junction Temperature +200 °C
Operation of this device above any of these parameters may cause permanent damage.
Typical Performance (4)
Parameter Units Typical
Frequency MHz 2350 2450 2650
S21 – Gain dB 10 10 9.5
S11 dB -8 -8.5 -19.5
S22 dB -15.5 -8.5 -11.5
Output P1dB dBm +32 +32 +32
Output IP3 dBm +47 +46 +46
Noise Figure dB 6.3 6.3 6.3
Supply Bias (3) +5 V @ 800 mA
4. Typical parameters reflect performance in a tuned application circuit at +25 °C.
Ordering Information
Part No. Description
ECP203D-G 2 Watt InGaP HBT Am plifier
(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN Package)
ECP203G-G 2 Watt InGaP HBT Am plifier
(lead-free/green/RoHS-compliant SOIC-8 Package)
Standard tape / reel size = 500 pieces on a 7” reel
1
2
3
4
8
7
6
5
Vre
GND
RF IN
GND
Vbias
RF OUT
RF OUT
GND
1
2
3
4
12
11
10
9
16 15 14 13
5 6 7 8
Gnd
RF OUT
RF OUT
Gnd
Vre
Gnd
RF IN
Gnd
Vbias
Gnd
Gnd
Gnd
Gnd
Gnd
Gnd
Gnd