BAP65-02 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2001 May 07 2001 May 11

DISCRETE SEMICONDUCTORS

BAP65-02

Silicon PIN diode

M3D319

2001 May 11 2

Philips Semiconductors Product speciﬁcation

Silicon PIN diode BAP65-02

FEATURES

•High voltage, current controlled

•RF resistor for RF switches

•Low diode capacitance

•Low diode forward resistance (low loss)

•Very low series inductance.

APPLICATIONS

•RF attenuators and switches

•Bandswitch for TV tuners

•Series diode for mobile communication transmit/receive

switch.

DESCRIPTION

Planar PIN diode in a SOD523 ultra small SMD plastic

package.

PINNING

PIN DESCRIPTION

1 cathode

2 anode

handbook, halfpage



Top view

MAM405

Marking code: K6.

Fig.1 Simplified outline (SOD523) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous reverse voltage −30 V

IFcontinuous forward current −100 mA

Ptot total power dissipation Ts≤90 °C−715 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −65 +150 °C

2001 May 11 3

Philips Semiconductors Product speciﬁcation

Silicon PIN diode BAP65-02

ELECTRICAL CHARACTERISTICS

Tj= 25°C unless otherwise speciﬁed.

Note

1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VFforward voltage IF= 50 mA 0.9 1.1 V

IRreverse leakage current VR=20V −20 nA

Cddiode capacitance VR= 0 V; f = 1 MHz 0.65 −pF

VR= 1 V; f = 1 MHz 0.55 0.9 pF

VR= 3 V; f = 1 MHz 0.5 0.8 pF

VR= 20 V; f = 1 MHz 0.375 −pF

rDdiode forward resistance IF= 1 mA; f = 100 MHz 1 −Ω

= 5 mA; f = 100 MHz; note 1 0.65 0.95 Ω

IF= 10 mA; f = 100 MHz; note 1 0.56 0.9 Ω

IF= 100 mA; f = 100 MHz 0.35 −Ω

21|2isolation VR= 0; f = 900 MHz 10 −dB

VR= 0; f = 1800 MHz 5.8 −dB

VR= 0; f = 2450 MHz 4.4 −dB

|s21|2insertion loss IF= 1 mA; f = 900 MHz 0.11 −dB

IF= 1 mA; f = 1800 MHz 0.13 −dB

IF= 1 mA; f = 2450 MHz 0.16 −dB

|s21|2insertion loss IF= 5 mA; f = 900 MHz 0.08 −dB

IF= 5 mA; f = 1800 MHz 0.11 −dB

IF= 5 mA; f = 2450 MHz 0.13 −dB

|s21|2insertion loss IF= 10 mA; f = 900 MHz 0.07 −dB

IF= 10 mA; f = 1800 MHz 0.1 −dB

IF= 10 mA; f = 2450 MHz 0.13 −dB

|s21|2insertion loss IF= 100 mA; f = 900 MHz 0.07 −dB

IF= 100 mA; f = 1800 MHz 0.1 −dB

IF= 100 mA; f = 2450 MHz 0.128 −dB

τLcharge carrier life time whenswitched from IF=10mAto

R= 6 mA; RL= 100 Ω;

measured at IR=3mA

0.17 −µs

Sseries inductance IF= 100 mA; f = 100 MHz 0.6 −nH

SYMBOL PARAMETER VALUE UNIT

Rth j-s thermal resistance from junction to soldering point 85 K/W

2001 May 11 4

Philips Semiconductors Product speciﬁcation

Silicon PIN diode BAP65-02

GRAPHICAL DATA

handbook, halfpage

10−1

MLD499

10−11IF (mA)

(Ω)

10 102

Fig.2 Forward resistance as a function of forward

current; typical values.

f = 100 MHz; Tj=25°C.

handbook, halfpage

020

1000

200

400

600

800

(fF)

VR (V)

81216

MLD500

Fig.3 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj=25°C.

handbook, halfpage

0 1000

(1) (2) (3) (4)

(5)

2000 f (MHz) 3000

−0.5

−0.1

−0.2

−0.3

−0.4

MLD501

s21 2

(dB)

Fig.4 Insertion loss (|s21|2) of the diode as a

function of frequency; typical values.

Diodeinsertedinserieswitha50 Ωstriplinecircuitandbiased

via the analyzer Tee network. Tamb =25°C.

(1) IF= 0.5 mA.

(2) IF= 1 mA.

(3) IF= 5 mA.

(4) IF=10mA.

(5) IF= 100 mA.

handbook, halfpage

0 1000 2000 f (MHz) 3000

−10

−30

−40

−20

MLD502

s21 2

(dB)

Fig.5 Isolation (|s21|2) of the diode as a function of

frequency; typical values.

Diode zero biased and inserted in series with a 50 Ωstripline circuit.

Tamb =25°C.

2001 May 11 5

Philips Semiconductors Product speciﬁcation

Silicon PIN diode BAP65-02

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOD523 SC-79 98-11-25

Plastic surface mounted package; 2 leads SOD523

0 0.5 1 mm

scale

UNIT bpcDEv

mm 0.35

0.25 0.2

0.1 0.15

0.9

0.7

1.3

1.1

0.7

0.5

1.7

1.5

DIMENSIONS (mm are the original dimensions)

Note

1. The marking bar indicates the cathode.

(1)

2001 May 11 6

Philips Semiconductors Product speciﬁcation

Silicon PIN diode BAP65-02

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS(1) PRODUCT

STATUS(2) DEFINITIONS

Objective data Development This data sheet contains data from the objective specification for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

Product data Production This data sheet contains data from the product specification. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change

Notiﬁcation (CPCN) procedure SNW-SQ-650A.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyother conditionsabovethose given inthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythat suchapplicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofany ofthese products,conveysno licenceor title

under any patent, copyright, or mask work right to these

products,and makes no representationsorwarrantiesthat

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2001 May 11 7

Philips Semiconductors Product speciﬁcation

Silicon PIN diode BAP65-02

NOTES

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2001 72

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Printed in The Netherlands 613512/03/pp8 Date of release: 2001 May 11 Document order number: 9397 750 08364