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CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
March 1998
ACS244MS
Radiation Hardened Non-Inverting,
Octal, Three-State Buffer/Line Driver
Features
• QML Qualified Per MIL-PRF-38535 Requirements
• 1.25Micron Radiation Hardened SOS CMOS
• Radiation Environment
- Latch-up Free Under any Conditions
- Total Dose. . . . . . . . . . . . . . . . . . . . . .3 x 105RAD(Si)
- SEU Immunity. . . . . . . . . . . <1 x 10-10 Errors/Bit/Day
- SEU LET Threshold . . . . . . . . . . .>100MeV/(mg/cm2)
• Input Logic Levels . VIL = (0.3V)(VCC), VIH = (0.7V)(VCC)
• Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . . ±16mA
• Quiescent Supply Current. . . . . . . . . . . . . . . . . . . .20µA
• Propagation Delay . . . . . . . . . . . . . . . . . . . . . . . . . 9.0ns
Applications
• Databus Driving
• Data Routing
• Redundant Data Control Circuitry
Description
The Radiation Hardened ACS244MS is a Non-Inverting,
Octal, Three-State Buffer/Line Driver with two active-LOW
Enable inputs (AE and BE). Each Enable input controls four
outputs. When an Enable input is LOW, the corresponding
outputs are active. A HIGH on an Enable input causes the
corresponding outputs to be high impedance, regardless of
the input levels.
The ACS244MS is fabricated on a CMOS Silicon on Sap-
phire (SOS) process, which provides an immunity to Single
Event Latch-up and the capability of highly reliable perfor-
mance in any radiation environment. These devices offer
significant power reduction and faster performance when
compared to ALSTTL types.
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed belo w m ust be used when or dering.
Detailed Electrical Specifications for the ACS244 are
contained in SMD 5962-98541. A “hot-link” is provided
on our homepage with instructions for downloading.
http://www.intersil.com/data/sm/index.htm
Ordering Information
Pinouts ACS244 (SBDIP)
TOP VIEW ACS244 (FLATPACK)
TOP VIEW
SMD PART NUMBER INTERSIL PART NUMBER TEMP. RANGE (oC) PACKAGE CASE OUTLINE
5962F9854101VRC ACS244DMSR-02 -55 to 125 20 Ld SBDIP CDIP2-T20
N/A ACS244D/Sample-02 25 20 Ld SBDIP CDIP2-T20
5962F9854101VXC ACS244KMSR-02 -55 to 125 20 Ld Flatpack CDFP4-F20
N/A ACS244K/Sample-02 25 20 Ld Flatpack CDFP4-F20
N/A ACS244HMSR-02 25 Die N/A
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12
13
14
15
16
17
18
20
19
10
9
8
7
6
5
4
3
2
1
AE
AI1
BO4
AI2
BO3
AI3
AI4
BO2
BO1
GND
VCC
AO1
BI4
AO2
BE
BI3
AO3
BI2
AO4
BI1
2
3
4
5
6
7
8
120
19
18
17
16
15
14
13
9
10
12
11
AE
AI1
BO4
AI2
BO3
AI3
AI4
BO2
BO1
GND
VCC
AO1
BI4
AO2
BE
BI3
AO3
BI2
AO4
BI1
File Number 4479
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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Infor mation fur nished by Intersil is believed to be accurate
and reliable . However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use . No license is g r anted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see w eb site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
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Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
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Taiwan Limited
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
Size: 2540µm x 2540µm (100 mils x 100mils)
Thickness: 525µm±25µm (20.6 mils ±1 mil)
Bond Pad: 110µm x 110µm (4.3 x 4.3 mils)
METALLIZATION: Al
Metal 1 Thickness: 0.7µm±0.1µm
Metal 2 Thickness: 1.0µm±0.1µm
SUBSTRATE POTENTIAL:
Unbiased Insulator
PASSIVATION
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30µm±0.15µm
SPECIAL INSTRUCTIONS:
Bond VCC First
ADDITIONAL INFORMATION:
Worst Case Density: <2.0 x 105 A/cm2
Transistor Count: 214
Metallization Mask Layout
ACS244MS
BO4 (3)
AI2 (4)
BO3 (5)
AI3 (6)
BO2 (7)
AI4 (8)
VCC
BO1 (9)
AO4 (12)
(13) BI2
(14) AO3
(15) BI3
(16) AO2
(17) BI4
(18) AO1
(20)
VCC
(20)
AE
(1)
AI1
(2) BE
(19)
(11)
BI1
(10)
GND
(10)
GND
ACS244MS
