VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Applications * Xmit & Rcv AGC circuitry for mobile infrastructure GND Gain Ctrl GND GND GND GND 5 4 3 2 1 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 15 16 17 18 19 20 21 N/C MATCH 22 GND GND Superior thermal design allows the product to have a minimum MTTF rating of 1000 years at a mounting temperature of +85 C. All devices are 100% RF & DC tested and packaged on tape and reel for automated surface-mount assembly. 6 GND The +22 dBm output compression point and +40 dBm output intercept point of the amplifier are maintained over the entire attenuation range, making the VG101 ideal for use in transmitter and receiver AGC circuits and as a variable gain stage following an LNA in high dynamic range receiver front ends. 7 GND 8 GND The VG101 is a cellular-band high dynamic range variable gain amplifier (VGA) packaged in a low profile Pb-free / RoHS-compliant surface-mount leadless package that measures 6 x 6 mm square. N/C 750 - 1000 MHz bandwidth 28 dB Attenuation Range +40 dBm Output IP3 +22 dBm P1dB Constant IP3 & P1dB over attenuation range * Single voltage supply * Pb-free 6mm 28-pin QFN package * MTTF > 1000 years Functional Diagram GND * * * * * Product Description GND Product Features Product Information Function Gain Control No Connect RF Input Interstage Match RF Output / DC bias Pin No 5 7, 19 11 21 25 All other pins Backside copper Ground Specifications (1) Parameter Operational Bandwidth Test Frequency Gain at min. attenuation Input Return Loss Output Return Loss Output P1dB Output IP3 Noise Figure at min. attenuation Gain Variation Range Gain Variation Control Voltage, VCTRL Group Delay Supply Voltage Operating Amplifier Current Range Gain Control Pin Current Units Min MHz MHz dB dB dB dBm dBm dB dB V ns V mA mA 750 Typ Max Conditions 1000 900 16 12 10 +22 +40 3 28.7 15 +37 25.5 0 1 +5 150 120 See note 1 See note 2 VCTRL = 0 V See note 3 See note 1 Frequency = 900 MHz 33.5 4.5 180 20 Pin 25 VCTRL = 4.5 V. See note 1. 1. Test conditions unless otherwise noted: 25C, Vdd = +5 V in a tuned application circuit. Vctrl is the control voltage through a BJT transistor and a 100 dropping resistor as shown in the same application circuit. 2. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. The gain variation range is measured as the difference in gain with Vctrl = 0V and Vctrl = 4.5V at 0.9 GHz. Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature Amplifier Supply Voltage (pin 25) Pin 5 (Gain Control) Current RF Input Power (continuous) Junction Temperature Rating -40 to +85 C -55 to +125 C +6 V 30 mA +12 dBm +220 C Operation of this device above any of these parameters may cause permanent damage. Ordering Information Part No. Description Cellular-band Variable Gain Amplifier VG101* (tin-lead 6mm QFN package) Cellular-band Variable Gain Amplifier VG101-F (lead-free/RoHS-compliant QFN package) VG101-PCB * Fully Assembled Application Board This package is being phased out in favor of the lead-free/RoHS-compliant package type which is backwards compatible for existing designs. Refer to WJPCN06MAY05TC1 on the WJ website. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 5 June 2005 VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Product Information Application Circuit: 750 - 1000 MHz (VG101-PCB) Circuit Board Material: .014" FR-4, 4 layers, .062" total thickness * The amplifier is biased through Pin 25 and should be connected directly into a voltage regulator. * Distances are shown from the edge-to-edge for the land pattern. Ref. Des. C1, C3 C2, C4 C5 L1 L2 L3 L4 R1 R3 R4 R5 Q1 U1 OIP3 vs. Output Power frequency = 900, 910 MHz, 25C, 10 dBm/tone 45 40 880 MHz, IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW, 25C -40 40 35 Size 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 0603 SOT-23 QFN 6x6 ACPR vs. Channel Power OIP3 vs. Attenuation Setting frequency = 900, 910 MHz, 0dB Atten. 45 Bill of Materials Description 47 pF Chip Capacitor 0.01 F Chip Capacitor 1 pF Chip Capacitor 82 nH Chip Inductor 39 nH Chip Inductor 2.7 nH Chip Inductor 8.2 nH Chip Inductor 100 Chip Resistor 2.7 Chip Resistor 4.7 Chip Resistor 47 Chip Resistor MMBT2222 Motorola Transistor VG101 Variable Gain Amplifier -50 35 0dB Attn -60 30 5dB Attn 30 +25C -40C 10dB Attn +85C 25 -70 25 -4 0 4 8 Output Power (dBm) 12 16 0 2 4 6 Attenuation (dB) 8 12 10 13 14 15 16 Output Channel Power (dBm) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 2 of 5 June 2005 VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Product Information VG101-PCB Application Circuit Performance (cont'd) Gain vs. Pin 5 Attn. Control Current Normalized Gain vs. Pin 5 Control Current 20 Noise Figure vs. Frequency Vctrl=0V (Minimum attenuation) 40 +25C 15 -40C +85C +25C 35 10 30 5 25 0 20 -5 15 -10 10 -15 5 -20 -40C 10 +85C -40C 5 10 15 20 25 4 2 0 0.1 Pin 5 Attenuation Control Current (mA) 1.0 10.0 100.0 700 750 800 Pin 5 Attenuation Control Current (mA) S21 vs. Frequency S11, S22 vs. Frequency Vctrl=0V (Minimum attenuation), +25 C Vctrl=0V (Minimum attenuation), +25 C 850 900 950 1000 Frequency (MHz) P1dB vs. Frequency Vctrl=0V (Minimum attenuation) 0 16 +85C 6 0 0 +25C 8 26 S11 -5 S 1 1 , S 2 2 (d B ) S 2 1 (d B ) 15 24 S22 -10 22 -15 20 12 -20 18 11 700 -25 700 16 14 13 -40C 750 800 850 900 950 1000 750 Frequency (MHz) S21 vs. Frequency vs. Control Voltage Vctrl=1V Vctrl=2V Vctrl=3V Vctrl=4V Vctrl=4.5V 850 900 950 Vctrl=0V Vctrl=1V Vctrl=2V Vctrl=3V Vctrl=4V Vctrl=4.5V -5 -10 -15 -25 750 1000 800 2.0 3 1.5 2 1.0 Vctrl vs Ictrl 0.5 V5 vs Ictrl 0 0.0 10 Ictrl (mA) 15 850 900 950 20 Vctrl=3V Vctrl=4V Vctrl=4.5V -15 800 0.5 1.0 1.5 2.0 850 900 950 1000 4 5 Frequency (MHz) Ictrl vs. Vctrl 18 16 14 12 10 8 6 4 2 0 0.0 950 -10 -25 750 1000 Ic trl (m A ) 4 V p in 5 (V ) 2.5 Ic trl (m A ) 5 5 Vctrl=1V Vctrl=2V Ictrl vs. Vpin5 3.0 925 -20 Vctrl, Vpin5 vs. Ictrl 1 Vctrl=0V Frequency (MHz) 6 900 S22 vs. Frequency vs. Control Voltage -20 800 875 Frequency (MHz) S 2 2 (d B ) Vctrl=0V -5 S 1 1 (d B ) S 2 1 (d B ) 850 1000 +85C 0 Frequency (MHz) V c trl (V ) 950 S11 vs. Frequency vs. Control Voltage -10 0 900 0 0 -20 750 850 Frequency (MHz) 20 10 800 +25C 2.5 3.0 Vpin5 (V) 18 16 14 12 10 8 6 4 2 0 0 1 2 3 Vctrl (V) Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 3 of 5 June 2005 VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Product Information VG101 Mechanical Information This package may contain lead-bearing materials. The plating material on the pins is SnPb. Outline Drawing Product Marking The component will be lasermarked with a "VG101" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL: Standard: Level 1 at +250 C convection reflow JEDEC Standard J-STD-020 GND 5 GND Gain Ctrl 6 GND GND 7 GND N/C Functional Pin Layout 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 C 59 C / W 129 C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 MTTF vs. GND Tab Temperature 1000 100 10 1 60 70 80 90 100 Tab Temperature (C) 110 18 19 GND GND GND N/C FUNCTION GND GND GND GND Gain control pin GND N/C GND GND GND RF Input GND GND GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 20 21 GND 17 MATCH 16 GND 22 GND 15 FUNCTION GND GND GND GND N/C GND Interstage Match GND GND GND RF Output / Bias GND GND GND Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 5 June 2005 VG101 The Communications Edge TM Cellular-band Variable Gain Amplifier Product Information VG101-F Mechanical Information This package is lead-free/RoHS-compliant. It is compatible with both lead-free (maximum 260C reflow temperature) and leaded (maximum 245C reflow temperature) soldering processes. The plating material on the pins is annealed matte tin over copper. Outline Drawing Product Marking The component will be lasermarked with a "VG101F" designator with an alphanumeric lot code on the top surface of the package. Tape and reel specifications for this part will be located on the website in the "Application Notes" section. ESD / MSL Information Mounting Configuration / Land Pattern ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000V to <2000V Charged Device Model (CDM) JEDEC Standard JESD22-C101 MSL Rating: Level 2 at +260C convection reflow Standard: JEDEC Standard J-STD-020 GND 5 GND Gain Ctrl 6 GND GND 7 GND N/C Functional Pin Layout 4 3 2 1 GND 8 28 GND GND 9 27 GND GND 10 26 GND Amp RF IN 11 25 RF OUT GND 12 24 GND Variable Attenuator GND 13 23 GND GND 14 Thermal Specifications Parameter Rating Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tjc (2) -40 to +85 C 59 C / W 129 C 1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical biasing condition of +5V, 150 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C. Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 MTTF vs. GND Tab Temperature 1000 100 10 1 60 70 80 90 100 Tab Temperature (C) 110 16 17 18 19 20 21 GND GND GND GND N/C GND MATCH 22 GND 15 FUNCTION GND GND GND GND Gain control pin GND N/C GND GND GND RF Input GND GND GND Pin 15 16 17 18 19 20 21 22 23 24 25 26 27 28 FUNCTION GND GND GND GND N/C GND Interstage Match GND GND GND RF Output / Bias GND GND GND Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 5 of 5 June 2005