STB200N6F3, STI200N6F3 STP200N6F3 N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAK STripFETTM Power MOSFET Features Type VDSS STB200N6F3 60 V RDS(on) < 3.5 m ID Pw (1) 330 W (1) 330 W 120 A STI200N6F3 60 V < 3.8 m 120 A STP200N6F3 60 V < 3.8 m 120 A(1) 330 W 1. Value limited by wire bonding Ultra low on-resistance 100% avalanche tested 3 3 1 2 TO-220 3 12 1 D2PAK I2PAK Application Switching applications Figure 1. Description Internal schematic diagram This STripFETTM III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. $ ' 3 !-V Table 1. Device summary Order codes Marking Package Packaging STB200N6F3 200N6F3 D2PAK Tape and reel STI200N6F3 200N6F3 2PAK Tube STP200N6F3 200N6F3 TO-220 Tube November 2009 Doc ID 15606 Rev 2 I 1/16 www.st.com 16 Contents STB200N6F3, STI200N6F3, STP200N6F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 .............................................. 9 Doc ID 15606 Rev 2 STB200N6F3, STI200N6F3, STP200N6F3 1 Electrical ratings Electrical ratings Table 2. Symbol Absolute maximum ratings Parameter VDS Drain-source voltage (VGS=0) VGS Value Unit 60 V Gate-source voltage 20 V (1) Drain current (continuous) at TC = 25C 120 A ID (1) Drain current (continuous) at TC=100C 120 A Drain current (pulsed) 480 A Total dissipation at TC = 25C 330 W Derating factor 2.2 W/C EAS (3) Single pulse avalanche energy 918 mJ Tj Tstg Operating junction temperature storage temperature -55 To 175 C ID IDM (2) PTOT 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. Starting Tj = 25 C, ID = 60 A, VDD = 35 V (see Figure 18 and Figure 19) Table 3. Symbol Rthj-case Thermal data Parameter Thermal resistance junction-case Rthj-a Thermal resistance junction-ambient max Rthj-pcb(1) Thermal resistance junction-ambient max Tl TO-220/IPAK Maximum lead temperature for soldering purpose DPAK 0.45 Unit C/W 62.5 C/W 50 300 C/W C 1. When mounted on 1 inch FR4 2oz Cu. Doc ID 15606 Rev 2 3/16 Electrical characteristics 2 STB200N6F3, STI200N6F3, STP200N6F3 Electrical characteristics (TCASE=25 C unless otherwise specified) Table 4. Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 A, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS= max rating, VDS= max rating,@125C IGSS Gate body leakage current VGS = 20 V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 250 A RDS(on) Static drain-source on resistance VGS= 10 V, ID= 60 A DPAK TO-220, IPAK Table 5. Symbol 4/16 On/off states Min. Typ. Max. 60 Unit V 10 100 A A 200 nA 4 V 3 3.3 3.5 3.8 m m Min. Typ. Max. Unit - 6265 1295 43 - pF pF pF - ns ns ns ns - nC nC nC 2 Dynamic Parameter Test conditions Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1MHz, VGS = 0 td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 30 V, ID = 60 A RG = 4.7 VGS = 10 V (see Figure 15, Figure 20) - 26 75 86 14 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 30 V, ID = 120 A, VGS = 10 V, (see Figure 16) - 101 36 25.2 Doc ID 15606 Rev 2 STB200N6F3, STI200N6F3, STP200N6F3 Table 6. Symbol Electrical characteristics Source drain diode Parameter Test conditions Min. Max. Unit - 120 480 A A 1.5 V ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD=120 A, VGS=0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD=120 A, di/dt = 100 A/s, VDD=48 V, Tj=150 C (see Figure 17) - ISD trr Qrr IRRM Typ. 67 177.6 5.3 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5% Doc ID 15606 Rev 2 5/16 Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220, IPAK Figure 3. Thermal impedance for TO-220, IPAK AM05515v1 ID (A) =0.5 s a DS(o thi in ax R n o ym ati er d b Op ite m Li 100 280tok K s ai re n) 0.2 100s 0.1 1ms 10 0.05 -1 10 0.02 10ms Tj=175C Tc=25C 1 Single pulse Single pulse 0.1 0.1 Figure 4. Zth=k Rthj-c =tp/ 0.01 tp -2 10 1 VDS(V) Safe operating area for DPAK 10 -5 10 -4 10 Figure 5. -3 10 -2 -1 10 Thermal impedance for DPAK !-V )$ ! =0.5 RE N S A O THI 2$3 N I X ON MA Y ATI ER D B P E / IT ,IM 280tok K S AI 0.2 S 0.1 MS 0.05 -1 10 4J # 4C # 0.02 3INGLE PULSE tp (s) 10 MS Zth=k Rthj-c =tp/ 0.01 Single pulse tp -2 Figure 6. ID (A) 10 -5 10 6$36 Output characteristics Figure 7. AM05516v1 VGS=10V -4 10 -1 10 10 tp (s) Transfer characteristics AM05517v1 ID (A) VDS=10V 350 350 -3 10 -2 300 300 7V 250 250 200 200 6V 150 150 100 100 50 0 0 6/16 50 5V 1 2 3 4 5 VDS(V) Doc ID 15606 Rev 2 0 0 2 4 6 8 10 VGS(V) STB200N6F3, STI200N6F3, STP200N6F3 Figure 8. Electrical characteristics Normalized BVDSS vs temperature AM00897v1 BVDSS (norm) Figure 9. Static drain-source on resistance AM05519v1 RDS(on) (m) 3.25 1.06 1.03 3.20 1.00 3.15 0.98 3.10 0.95 3.05 0.92 -50 -25 25 0 50 75 100 TJ(C) 3.00 0 20 10 30 50 40 ID(A) 60 Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations AM05520v1 VGS (V) VDD=30V ID=120A 12 AM05521v1 C (pF) 14010 12010 10 10010 8 8010 6 Ciss 6010 4 4010 2 2010 0 0 40 20 60 80 100 120 Qg(nC) Figure 12. Normalized gate threshold voltage vs temperature !-V 6'3TH NORM 10 0 Coss Crss 10 20 30 40 50 VDS(V) Figure 13. Normalized on resistance vs temperature !-V 2$3ON NORM 4* # Doc ID 15606 Rev 2 4* # 7/16 Electrical characteristics STB200N6F3, STI200N6F3, STP200N6F3 Figure 14. Source-drain diode forward characteristics AM05524v1 VSD (V) 0.9 TJ=-55C 0.8 TJ=25C 0.7 0.6 TJ=175C 0.5 0.4 0.3 0 8/16 10 20 30 40 50 ISD(A) Doc ID 15606 Rev 2 STB200N6F3, STI200N6F3, STP200N6F3 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F VGS IG=CONST VDD 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 0 Doc ID 15606 Rev 2 10% AM01473v1 9/16 Package mechanical data 4 STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/16 Doc ID 15606 Rev 2 STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data D2PAK (TO-263) mechanical data Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 mm Min Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 in c h Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 8 0 0.4 0 Typ 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8 0079457_M Doc ID 15606 Rev 2 11/16 Package mechanical data STB200N6F3, STI200N6F3, STP200N6F3 IPAK (TO-262) mechanical data mm inch Dim Min A A1 b b1 c c2 D e e1 E L L1 L2 12/16 Typ 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 Doc ID 15606 Rev 2 Max Min 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 Typ Max 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 STB200N6F3, STI200N6F3, STP200N6F3 Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max 4.60 0.88 1.70 0.70 15.75 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 16.40 28.90 3.75 2.65 3.85 2.95 0015988_Rev_S Doc ID 15606 Rev 2 13/16 Packaging mechanical data 5 STB200N6F3, STI200N6F3, STP200N6F3 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 MAX. B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 0.153 0.161 P0 3.9 4.1 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 14/16 Doc ID 15606 Rev 2 MIN. 330 B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA inch MAX. MAX. 12.992 0.059 13.2 0.504 0.520 26.4 0.960 1.039 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB200N6F3, STI200N6F3, STP200N6F3 6 Revision history Revision history Table 7. Document revision history Date Revision Changes 20-Apr-2009 1 First version. 18-Nov-2009 2 Document status promoted from preliminary data to datasheet. Doc ID 15606 Rev 2 15/16 STB200N6F3, STI200N6F3, STP200N6F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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