ZPD 2.7 ... ZPD 51 SILICON PLANAR ZENER DIODES Silicon Expitaxial Planar Diode The Zener voltages are graded according to the international E 24 standard. Smaller voltage tolerances and higher Zener voltages on request. Absolute Maximum Ratings (T, = 25 C) t max 75 3.9 a 7S t 1 i, max. 1.98 Cathode Mark in White max. 0.520 Le Glass case JEDEC DO-35 Dimensions in mm Symbol Value Unit Zener Current see Table Characteristics Power Dissipation at T,,, = 25 C ot 500 mW Junction Temperature T, 175 C Storage Temperature Range T, -55 to + 175 C Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case Characteristics at T,, = 25 C Symbol Min. Typ. Max. Unit Thermal Resistance R - - 0.3 K/mWw Junction to Ambient Air thA 1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. ) ZPD 2.7 ... ZPD 51 SILICON PLANAR ZENER DIODES Zener Voltage range Dynamic resistance | Temp. coeff. Reverse Admissible Zener Current? of Zener Volt. Voltage at at at at Type Venom |, for V_,2) Tix Atl, | L=SmA !=100nA Type 40C Tamb=20C Vv mA Q mA 10/K VAV mA w. 4 9... -3 8... -3 ae +4 +7 wt? a +? +8 1} Tested with pulses tp = 20 ms. 2) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. (ee SEMTECH ELECTRONICS LTD. 4 } EY) ( wholly owned subsidiary of HOMEY TECHNOLOGY LTD. ) ZPD 2.7 ... ZPD 51 SILICON PLANAR ZENER DIODES Breakdown characteristics T; = constant (pulsed) mA ZPD... 50 TT | TTI T.1 T = 25C ZPD 27 ZPD 39 ZPD 56 ZPD/33 | | ZPDA7 ZPD 68 Ip 40 ZPD 1 ZPD 82 30 | | 1 Lt] Test current /z | | 10 HH L Apt tt 0 1 2 3 4 5 6 7 8 9 Ov ees ee ) Breakdown characteristics T; = constant (pulsed) mA 30 20 0 10 20 30 40V SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )