FDS6612A seen eaee FAIRCHILD Leer pene ince SEMICONDUCTOR Im FDS6612A July 1998 Single N-Channel, Logic Level, PowerTrench MOSFET General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. sora. Features = B4A,30V. Rosin = 0.0222 @ Va.=10V, Rosiow = 0.0802 @ Vag = 4.5 V. = Fast switching speed. = Low gate charge. 8 High performance trench technology for extremely low R DS(ON)" High power and current handling capability. Absolute Maximum Ratings T, = 25C uniess otherwise noted Symbol | Parameter FDS6612A Units Voss Drain-Source Voltage 30 v Voss Gate-Source Voitage 420 ly Drain Current - Continuous (Note 14) 8.4 A - Pulsed 40 P, Power Dissipation for Single Operation _(Nete 1a) 25 Ww (Note 1b) 12 (Note 1c) 1 T..Tor [Operating and Storage Temperature Range -55 to 150 C THERMAL CHARACTERISTICS Rusa Thermal Resistance, Junction-to-Ambient (Note 12) 50 C Rac Thermal Resistance, Junction-to-Case (Note) 25 C/W 2-58 FDS6612A Rev.C | Electrical Characteristics (T, = 25C unless otherwise noted ) o Symbol | Parameter | Conditions | Min [tye Max | Unis | OFF CHARACTERISTICS % BV neg Drain-Source Breakdown Voltage Vog= OV, 1,= 250 pA 30 V D ABV AT, Breakdown Voltage Temp. Coefficient |,= 250 pA, Referenced to 25C 26 mV /C > loss Zero Gate Voltage Drain Current Vos = 24V, Veg= OV 1 LA T, =55C 10 A legsr Gate - Body Leakage, Forward Veg = 20V, Vig = OV 100 nA leesa Gate - Body Leakage, Reverse Vog = -20V, Vog= OV 100 | nA ON CHARACTERISTICS note 2) Vosiny Gate Threshold Voltage Vog = Vag lp = 250 pA 1 1.6 3 V MVege/ AT, Gate Threshold Vokage Temp. Coefficient |,= 250 yA, Referenced to 25C 43 mV PC Pasow Static Drain-Source On-Resistance Vog = 10V, 1,=8.4A 0.019 | 0.022 2 T, =125C 0.027 | 0.037 Veg = 45V, 1p=72A 0.026 | 0.03 lyow On-State Drain Current Vg5 = 10 V, Vag = 5 V 20 A Ges Forward Transconductance Vpg = 15 V, 1 = 8.4A 19 S DYNAMIC CHARACTERISTICS C., __| Input Capacitance Vog = 15 V, Veg = OV, 830 pF Coss Qutput Capacitance f =1.0MHz 185 pF Co. Reverse Transfer Capacitance 80 pF SWITCHING CHARACTERISTICS cea oven} Tum - On Delay Time Vog= 15 V, |= 1A 6 12 ns t [Tum - On Rise Time Veg = 10V, Pog, = 6.2 10 | 18 | ns tray Tum - Off Delay Time 18 29 ns t Tum - Off Fall Time 5 12 ns Q, Total Gate Charge Vog = 15 V, 1, =8.4A, 9 13 nc Q, __| Gate-Source Charge Vog= 5V 28 nc Qu: | Gate-Drain Charge 3.1 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS ly | Maximum Continuous Drain-Source Diode Forward Current 2.1 A Vsp Drain-Source Diode Forward Voltage Vog = OV, I= 217A (uote2) Q75 | 12 Vv Notes: 1. Ry, is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. A,,,.is guaranteed by design while R,,.., is determined by the user's board design. 5 a a. 50C on a 0.5 in? H ~~ b. 105C/W on a 0.02 in? OS we c. 125C/W on a 0.003 in* pad pad of 20z copper. AS pad of 20z copper. est Re of 202 copper. g S Scale 1:10n letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. 2-59 FDS6612A Rev.C FDS6612A Typical Electrical Characteristics _ vMs=iovfo7F | #=| || < : / 4.5V 525 AOV & 3.5V 5 20 = +o a7 MZ & 15 a 3 3.0V wa Z 10 ft 5 5s Wo Ee - I 2.5V 0 wo 0 Os 1 1.5 2 26 3 Vigg, ORAIN-SOURCE VOLTAGE (V} Figure 1. On-Region Characteristics. 18 OT 8 ip=84A g 16 Veg =10Vo po No af w14 - za "| ; 2% | Su 12 gD a 1 e9 | F4 = 08 | nae | 9g bene wool -50 28 0 25 50 7 400 725 150 Ty , JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. < ee z Ty q a 2 Qa Z & a 4 ee) | 0 1 2 3 4 Vag GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. R ps(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE FR ps(ony, ON-RESISTANCE (OHM) is, REVERSE DRAIN CURRENT (A) 0.0001 0 2.5 Os 0.05 fo ) | | aS a 0.01 0.001 Vgg= 3,0V 0 10 Ip . DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Ty = 125C 0.025 | i | ei Ty = 25C 0 7 2 4 8 8 10 Vgg - GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 30 04 0.2 0.4 06 08 1 12 14 Vep: BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2-60 FDS6612A Rev.C Typical Electrical And Thermal Characteristics Vag . GATE-SOURCE VOLTAGE (V) O41 ip, ORAIN CURRENT (A) CAPACITANCE (pF) Vog- DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. ey pro ; | SINGLE PULSE ~ f+ Ryan = 128C POWER (W) Be SINGLE PULSE 0 = Raa=t25Cw : 03 Tax 25C a i ae 0 ; 01 02 05 1 2 5 10 20 30 50 SINGLE PULSE TIME (GEC 100 300 Vag. DRAIN-SOURCE VOLTAGE (V) (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Dissipation. Fase SE - TTT oy ioTP _ = Ragua (t)=r(t) * Ro gud Raua = 125C eS ' ~| ~~ | = =| r : i to +t : te = rt - Ty- Ty =P *R gait) ~ 0.002 - TT +t oo aofooee Duty Cycle, D=t, / [ . bo 7 OTL Le eee teh 01 10 100 300 t,. TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions descnbed in Note 1c. Transient thermal response will change depending on the circuit board design 2-61 FDS6612A Rev.C velg9saqd