FDD6N50TM - Fairchild Semiconductor

FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

January 2006

UniFET TM

FDD6N50/FDU6N50

500V N-Channel MOSFET

Features

• 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V

• Low gate charge ( typical 12.8 nC)

•Low C

rss ( typical 9 pF)

•Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode. These devices are well suited for high

efficient switched mode power supplies and active power factor

correction.

I-PAK

FDU Series

D-PAK

FDD Series GSD

Absolute Maximum Ratings

Symbol Parameter FDD6N50/FDU6N50 Unit

VDSS Drain-Source Voltage 500 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

3.8

IDM Drain Current - Pulsed (Note 1) 24 A

VGSS Gate-Source voltage ±30 V

EAS Single Pulsed Avalanche Energy (Note 2) 270 mJ

IAR Avalanche Current (Note 1) 6 A

EAR Repetitive Avalanche Energy (Note 1) 8.9 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C

0.71

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Thermal Characteristics

Symbol Parameter Min. Max. Unit

RθJC Thermal Resistance, Junction-to-Case -- 1.4 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 83 °C/W

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FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDD6N50 FDD6N50TM D-PAK 380mm 16mm 2500

FDD6N50 FDD6N50TF D-PAK 380mm 16mm 2000

FDU6N50 FDU6N50TU I-PAK - - 70

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA500 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250µA, Referenced to 25°C-- 0.5 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V

VDS = 400V, TC = 125°C

µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10V, ID = 3A -- 0.76 0.9 Ω

gFS Forward Transconductance VDS = 40V, ID = 3A (Note 4) -- 2.5 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25V, VGS = 0V,

f = 1.0MHz

-- 720 940 pF

Coss Output Capacitance -- 95 190 pF

Crss Reverse Transfer Capacitance -- 913.5 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 250V, ID = 6A

RG = 25Ω

(Note 4, 5)

-- 620 ns

trTurn-On Rise Time -- 55 120 ns

td(off) Turn-Off Delay Time -- 25 60 ns

tfTurn-Off Fall Time -- 35 80 ns

QgTotal Gate Charge VDS = 400V, ID = 6A

VGS = 10V

(Note 4, 5)

-- 12.8 16.6 nC

Qgs Gate-Source Charge -- 3.7 -- nC

Qgd Gate-Drain Charge -- 5.8 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A

VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 6A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0V, IS = 6A

dIF/dt =100A/µs (Note 4)

-- 275 -- ns

Qrr Reverse Recovery Charge -- 1.7 -- µC

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C

3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5. Essentially Independent of Operating Temperature Typical Characteristics

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FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

246810

10-2

10-1

100

101

Note∝

1. VDS = 40V

2. 250レs Pulse Test

-55∩

150∩

25∩

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

0 1020304050

VGS

Top : 10.0 V

8.0V

7.5 V

7.0 V

6.5 V

6.0 V

5.5 V

Bottom : 5.0 V

Notes :∝

1. 250レs Pulse Test

2. TC = 25∩

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

0 5 10 15 20

0.0

0.5

1.0

1.5

2.0

2.5

VGS = 20V

VGS = 10V

Note : T∝J = 25∩

RDS(ON) [ヘ],Drain-Source On-Resistance

ID, Drain Current [A]

0.20.40.60.81.01.21.41.61.8

10-1

100

101

25∩

150∩

Notes :∝

1. VGS = 0V

2. 250レs Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

100101

100

1000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes :∝

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

051015

VDS = 250V

VDS = 100V

VDS = 400V

Note : I∝D = 6A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

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FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

♦ Notes :

1. VGS = 0 V

2. ID = 250 µA

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

♦ Notes :

1. VGS = 10 V

2. ID = 3 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [∩]

100101102103

10-2

10-1

100

101

102

10 us

Operation in This Area

is Limited by R DS(on)

10 ms

1 ms

100 us

Notes :∝

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

Notes :∝

1. ZヨJC

(t) = 1.4 ∩/W Max.

2. D uty F actor, D= t1/t2

3. TJM - TC = PDM * ZヨJC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZヨJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

5www.fairchildsemi.com

FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

6www.fairchildsemi.com

FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

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FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Mechanical Dimensions

D-PAK

Dimensions in Millimeters

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FDD6N50/FDU6N50 REV. A

FDD6N50/FDU6N50 500V N-Channel MOSFET

Mechanical Dimensions (Continued)

I-PAK

Dimensions in Millimeters

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY

ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT

CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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In Design

First Production

Full Production

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