SIGC06T60G
Edited by INFINEON Technologies AI PS DD CLS, L7521A, Edition 2, 27.01.2005
MAXIMUM RATINGS:
Parameter Symbol Value Unit
Collector-emitter voltage, Tj= 25 °C VCE 600 V
DC collector current, limited by Tjmax IC 1 ) A
Pulsed collector current, tp limited by Tjmax Icpuls 30 A
Gate emitter voltage VGE ±20 V
Operating junction and storage temperature Tj, Tstg -40 ... +175 °C
Tvj = 150°C 6
SC data, VGE = 15V, VCC = 360V Tvj = 25°C tp 8 µs
1 ) depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip), Tj=25 °C, unless otherwise specified
Value
Parameter Symbol Conditions min. typ. max. Unit
Collector-emitter breakdown voltage V(BR)CES VGE=0V , IC= 2mA 600
Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=10A 1.1 1.5 1.9
Gate-emitter threshold voltage VGE(th) IC=150µA , VGE=VCE 5.0 5.8 6.5
V
Zero gate voltage collector current ICES VCE=600V , VGE=0V 0.6 µA
Gate-emitter leakage current IGES VCE=0V , VGE=20V 300 nA
Integrated gate resistor RGint none Ω
ELECTRICAL CHARACTERISTICS (verified by design/characterization):
Value
Parameter Symbol Conditions min. typ. max. Unit
Input capacitance Ciss 551
Output capacitance Coss 40
Reverse transfer capacitance Crss
VCE=25V,
VGE=0V,
f=1MHz 17
pF
SWITCHING CHARACTERISTICS (verified by design/characterization), inductive load
Value 2)
Parameter Symbol Conditions min. typ. max. Unit
Turn-on delay time td(on) 12
Rise time tr 13
Turn-off delay time td(off) 120
Fall time tf
Tj=125°C
VCC=300V,
IC=10A,
VGE=-15/15V,
RG= 27Ω 130
ns
2) values also influenced by parasitic L- and C- in measurement and package.