VS-GT175DA120U www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 175 A FEATURES * Trench IGBT technology temperature coefficient with positive * Square RBSOA * 10 s short circuit capability * HEXFRED(R) antiparallel diodes with ultrasoft reverse recovery * TJ maximum = 150 C * Fully isolated package SOT-227 * Very low internal inductance ( 5 nH typical) * Industry standard outline PRODUCT SUMMARY VCES IC(DC) * UL approved file E78996 1200 V 175 A at 90 C VCE(on) typical at 100 A, 25 C 1.73 V IF(DC) 32 A at 90 C * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (1) Speed 8 kHz to 30 kHz Package SOT-227 Circuit Single switch diode BENEFITS * Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating * Easy to assemble and parallel * Direct mounting to heatsink Note (1) Maximum collector current admitted is 100 A, to not exceed the maximum temperature of terminals * Plug-in compatible with other SOT-227 packages * Very low VCE(on) * Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage SYMBOL TEST CONDITIONS VCES MAX. UNITS 1200 V TC = 25 C 288 TC = 90 C 175 Continuous collector current IC (1) Pulsed collector current ICM 450 Clamped inductive load current ILM 450 Diode continuous forward current Gate to emitter voltage Power dissipation, IGBT Power dissipation, diode Isolation voltage IF TC = 25 C 54 TC = 90 C 32 TC = 25 C 1087 TC = 90 C 522 TC = 25 C 219 VGE PD PD VISOL 20 TC = 90 C 105 Any terminal to case, t = 1 min 2500 A V W V Note (1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals Revision: 31-May-16 Document Number: 93990 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop, diode Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. VGE = 0 V, IC = 250 A 1200 - - VGE = 15 V, IC = 100 A - 1.73 2.1 VGE = 15 V, IC = 100 A, TJ = 125 C - 1.98 2.2 VGE = 15 V, IC = 100 A, TJ = 150 C - 2.05 - VCE = VGE, IC = 250 A - 5 - VCE = VGE, IC = 7.5 mA 4.9 5.9 7.9 - UNITS V VCE = VGE, IC = 250 A, TJ = 125 C - 2.9 VCE = VGE, IC = 1 mA (25 C to 125 C) - -17.6 - mV/C VGE = 0 V, VCE = 1200 V - 0.9 100 A VGE = 0 V, VCE = 1200 V, TJ = 125 C - 0.85 10 VGE = 0 V, VCE = 1200 V, TJ = 150 C - 4 20 mA IF = 40 A, VGE = 0 V - 3.12 3.44 IF = 40 A, VGE = 0 V, TJ = 125 C - 3.15 3.47 IF = 40 A, VGE = 0 V, TJ = 150 C - 3.25 - VGE = 20 V - - 200 nA MIN. TYP. MAX. UNITS - 830 - - 180 - - 380 - V SWITCHING CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc TEST CONDITIONS IC = 150 A (tp < 400 s, D < 2 %), VCC = 600 V, VGE = 15 V Turn-on switching loss Eon - 4.8 - Turn-off switching loss Eoff - 7.0 - Total switching loss Etot - 11.8 - Turn-on delay time td(on) - 274 - - 67 - - 271 - Rise time Turn-off delay time Fall time Turn-on switching loss tr tf Eon Eoff Total switching loss Etot Turn-on delay time td(on) Turn-off delay time Fall time Reverse bias safe operating area tr IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 2.2 L = 500 H, TJ = 125 C td(off) tf RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Short circuit safe operating area Energy losses include tail and diode recovery Diode used HFA16PB120 td(off) Turn-off switching loss Rise time IC = 100 A, VCC = 720 V, VGE = 15 V, Rg = 2.2 L = 500 H, TJ = 25 C SCSOA - 177 - - 6.0 - - 10.4 - - 16.4 - - 285 - - 75 - - 306 - - 244 - TJ = 150 C, IC = 450 A, Rg = 4.7 VGE = 15 V to 0 V, VCC = 600 V, VP = 1200 V, L = 500 H IF = 50 A, dIF/dt = 200 A/s, VR = 400 V IF = 50 A, dIF/dt = 200 A/s, VR = 400 V, TJ = 125 C TJ = 150 C, Rg = 22 , VGE = 15 V to 0 V, VCC = 900 V, Vp = 1200 V nC mJ ns mJ ns Fullsquare - 164 - - 12 - ns A - 994 - nC - 230 - ns - 16.5 - A - 1864 - nC 10 s Revision: 31-May-16 Document Number: 93990 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL IGBT Junction to case TEST CONDITIONS MIN. TYP. MAX. UNITS -40 - 150 C - - 0.115 - - 0.57 - 0.05 - - 30 - Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.3 (11.5) Nm (lbf.in) TJ, TStg Junction and storage temperature range RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Mounting torque 160 140 120 DC 100 80 60 40 20 160 140 120 100 80 60 40 20 0 0 0 40 80 120 160 200 240 280 320 0 10 20 30 40 50 60 70 80 IC - Continuous Collector Current (A) IF - Continuous Forward Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature Diode Leg 300 200 VGE = 15 V 275 TJ = 125 C 250 225 IF - Forward Current (A) IC - Collector to Emitter Current (A) g SOT-227 Allowable Case Temperature (C) Allowable Case Temperature (C) Case style C/W TJ = 125 C 200 175 150 TJ = 150 C TJ = 25 C 125 100 75 50 160 120 TJ = 25 C TJ = 150 C 80 40 25 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VCE - Collector-to-Emitter Voltage (V) VF - Forward Voltage Drop Characteristics (V) Fig. 2 - Typical Collector to Emitter Current Output Characteristics of IGBT Fig. 4 - Typical Diode Forward Voltage Drop Characteristics Revision: 31-May-16 Document Number: 93990 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U Vishay Semiconductors 140 120 100 80 TJ = 150 C 60 TJ = 125 C 40 20 TJ = 25 C 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 VCE - Collector-to-Emitter Current (A) IC - Collector to Emitter Current (A) www.vishay.com 2.4 2.2 IC = 100 A 2.0 IC = 80 A 1.8 IC = 60 A 1.6 IC = 40 A 1.4 1.2 1.0 0.8 0 20 40 60 80 120 140 160 TJ - Junction Temperature (C) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 100 12.0 11.0 10 TJ = 150 C 1 TJ = 125 C Eoff 10.0 9.0 0.1 0.01 Energy (mJ) ICES - Collector Current (A) 100 VGE - Gate-to-Emitter Voltage (V) 7.0 Eon 6.0 5.0 4.0 3.0 TJ = 25 C 0.001 8.0 2.0 1.0 0.0001 0 0 200 400 600 800 1000 1200 10 20 30 40 50 60 70 80 90 100 110 120 VCES - Collector-to-Emitter Voltage (V) IC (A) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Losses vs. IC TJ = 125 C, L = 500 H, VCC = 720 V, Rg = 2.2 , VGE = 15 V Diode used: HFA16PB120 1000 6 5 Switching Time (ns) VGE(th) Threshold Voltage (V) tf TJ = 25 C 5.5 4.5 4 TJ = 125 C 3.5 3 td(off) td(on) 100 tr 2.5 2 10 0.20 0.40 0.60 0.80 1.00 IC (mA) Fig. 7 - Typical IGBT Threshold Voltage 10 20 30 40 50 60 70 80 90 100 110 120 IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 C, L = 500 H, VCC = 720 V, Rg = 2.2 , VGE = 15 V Diode used: HFA16PB120 Revision: 31-May-16 Document Number: 93990 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U www.vishay.com Vishay Semiconductors 310 40 290 35 30 250 230 25 trr (ns) Energy (mJ) 270 Eon 20 15 TJ = 125 C 210 190 170 Eoff 150 10 TJ = 25 C 130 5 110 90 100 0 0 10 20 30 40 50 1000 Rg () dIF/dt (A/s) Fig. 11 - Typical IGBT Energy Losses vs. Rg TJ = 125 C, IC = 100 A, L = 500 H, VCC = 720 V, VGE = 15 V Diode used: HFA16PB120 Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt, of Diode, at IF = 50 A, VR = 400 V 3000 10000 TJ = 125 C td(off) 1000 2000 Qrr (nC) Switching Time (ns) 2500 td(on) tf 1500 1000 100 tr 500 0 100 10 0 TJ = 25 C 10 20 30 40 50 1000 dIF/dt (A/s) Rg () Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 C, L = 500 H, VCC = 720 V, IC = 100 A, VGE = 15 V Diode used: HFA16PB120 Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode, at IF = 50 A, VR = 400 V 45 40 35 Irr (A) 30 25 TJ = 125 C 20 15 TJ = 25 C 10 5 0 100 1000 dIF/dt (A/s) Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt, of Diode, at IF = 50 A, VR = 400 V Revision: 31-May-16 Document Number: 93990 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 0.75 0.50 PDM 0.25 0.01 t1 0.1 0.05 0.02 DC t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.75 0.50 0.1 0.25 0.1 PDM 0.05 0.01 0.02 DC t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) 1000 IC (A) 100 10 1 0.1 0.01 1 10 100 1000 10 000 VCE (V) Fig. 18 - IGBT Reverse Bias SOA, TJ = 150 C, VGE = 15 V Revision: 31-May-16 Document Number: 93990 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U www.vishay.com Vishay Semiconductors R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 19 - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V + VCC D.U.T./ driver Rg Fig. 20a - Switching Loss Test Circuit 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 s Eoff Eon Ets = (Eon + Eoff) Fig. 20b - Switching Loss Waveforms Test Circuit Revision: 31-May-16 Document Number: 93990 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT175DA120U www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 175 D A 120 U 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - Trench IGBT technology 4 - Current rating (175 = 175 A) 5 - Circuit configuration (D = Single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Single switch diode Lead Assignment 4 3 1 2 D 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 31-May-16 Document Number: 93990 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation II DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) O 4.10 (0.161) O 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 25.70 (1.012) 24.70 (0.972) -B- 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) R full 2.10 (0.083) 2.20 (0.087) 30.50 (1.200) 29.80 (1.173) 31.50 (1.240) 32.10 (1.264) 4x 2.20 (0.087) 1.90 (0.075) 8.30 (0.327) 7.70 (0.303) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 12.30 (0.484) 11.70 (0.460) -C0.13 (0.005) 25.00 (0.984) 25.50 (1.004) Note * Controlling dimension: millimeter Revision: 02-Aug-12 Document Number: 95423 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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