VS-GT175DA120U
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Insulated Gate Bipolar Transistor
(Trench IGBT), 175 A
Note
(1) Maximum collector current admitted is 100 A, to not exceed the
maximum temperature of terminals
FEATURES
• Trench IGBT technology with positive
temperature coefficient
• Square RBSOA
• 10 μs short circuit capability
•HEXFRED
® antiparallel diodes with ultrasoft reverse
recovery
•T
J maximum = 150 °C
• Fully isolated package
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
• Easy to assemble and parallel
• Direct mounting to heatsink
• Plug-in compatible with other SOT-227 packages
• Very low VCE(on)
• Low EMI, requires less snubbing
Note
(1) Maximum collector current admitted is 100 A, to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
VCES 1200 V
IC(DC) 175 A at 90 °C (1)
VCE(on) typical at 100 A, 25 °C 1.73 V
IF(DC) 32 A at 90 °C
Speed 8 kHz to 30 kHz
Package SOT-227
Circuit Single switch diode
SOT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage VCES 1200 V
Continuous collector current IC (1) TC = 25 °C 288
A
TC = 90 °C 175
Pulsed collector current ICM 450
Clamped inductive load current ILM 450
Diode continuous forward current IF
TC = 25 °C 54
TC = 90 °C 32
Gate to emitter voltage VGE ± 20 V
Power dissipation, IGBT PD
TC = 25 °C 1087
W
TC = 90 °C 522
Power dissipation, diode PD
TC = 25 °C 219
TC = 90 °C 105
Isolation voltage VISOL Any terminal to case, t = 1 min 2500 V
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage VBR(CES) VGE = 0 V, IC = 250 μA 1200 - -
V
Collector to emitter voltage VCE(on)
VGE = 15 V, IC = 100 A - 1.73 2.1
VGE = 15 V, IC = 100 A, TJ = 125 °C - 1.98 2.2
VGE = 15 V, IC = 100 A, TJ = 150 °C - 2.05 -
Gate threshold voltage VGE(th)
VCE = VGE, IC = 250 μA - 5 -
VCE = VGE, IC = 7.5 mA 4.9 5.9 7.9
VCE = VGE, IC = 250 μA, TJ = 125 °C - 2.9 -
Temperature coefficient of threshold voltage VGE(th)/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - -17.6 - mV/°C
Collector to emitter leakage current ICES
VGE = 0 V, VCE = 1200 V - 0.9 100 μA
VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 0.85 10 mA
VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 4 20
Forward voltage drop, diode VFM
IF = 40 A, VGE = 0 V - 3.12 3.44
VIF = 40 A, VGE = 0 V, TJ = 125 °C - 3.15 3.47
IF = 40 A, VGE = 0 V, TJ = 150 °C - 3.25 -
Gate to emitter leakage current IGES VGE = ± 20 V - - ± 200 nA
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) QgIC = 150 A (tp < 400 μs, D < 2 %),
VCC = 600 V, VGE = 15 V
- 830 -
nCGate to emitter charge (turn-on) Qge - 180 -
Gate to collector charge (turn-on) Qgc - 380 -
Turn-on switching loss Eon
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 2.2
L = 500 μH, TJ = 25 °C
Energy losses
include tail
and diode
recovery
Diode used
HFA16PB120
-4.8-
mJTurn-off switching loss Eoff -7.0-
Total switching loss Etot -11.8-
Turn-on delay time td(on) - 274 -
ns
Rise time tr-67-
Turn-off delay time td(off) - 271 -
Fall time tf- 177 -
Turn-on switching loss Eon
IC = 100 A, VCC = 720 V,
VGE = 15 V, Rg = 2.2
L = 500 μH, TJ = 125 °C
-6.0-
mJTurn-off switching loss Eoff -10.4-
Total switching loss Etot -16.4-
Turn-on delay time td(on) - 285 -
ns
Rise time tr-75-
Turn-off delay time td(off) - 306 -
Fall time tf- 244 -
Reverse bias safe operating area RBSOA
TJ = 150 °C, IC = 450 A, Rg = 4.7
VGE = 15 V to 0 V, VCC = 600 V,
VP = 1200 V, L = 500 μH
Fullsquare
Diode reverse recovery time trr
IF = 50 A, dIF/dt = 200 A/μs, VR = 400 V
- 164 - ns
Diode peak reverse current Irr -12- A
Diode recovery charge Qrr - 994 - nC
Diode reverse recovery time trr IF = 50 A, dIF/dt = 200 A/μs,
VR = 400 V, TJ = 125 °C
- 230 - ns
Diode peak reverse current Irr -16.5- A
Diode recovery charge Qrr - 1864 - nC
Short circuit safe operating area SCSOA
TJ = 150 °C, Rg = 22 ,
VGE = 15 V to 0 V, VCC = 900 V,
Vp = 1200 V
10 μs
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Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 2 - Typical Collector to Emitter Current Output Characteristics
of IGBT
Fig. 3 - Maximum Allowable Forward Current vs. Case Temperature
Diode Leg
Fig. 4 - Typical Diode Forward Voltage Drop Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -40 - 150 °C
Junction to case IGBT RthJC
- - 0.115
°C/WDiode - - 0.57
Case to heatsink RthCS Flat, greased surface - 0.05 -
Weight -30 - g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.3 (11.5) Nm (lbf.in)
Case style SOT-227
Allowable Case Temperature (°C)
IC - Continuous Collector Current (A)
0 40 80 120 200160 240 280 320
0
160
100
120
140
20
40
60
80
DC
VCE - Collector-to-Emitter Voltage (V)
IC - Collector to Emitter Current (A)
04.00.5 1.0 1.5 2.0 2.5 3.0 3.5
0
300
100
200
275
75
175
250
50
150
225
25
125 TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
VGE = 15 V
IF - Continuous Forward Current (A)
Allowable Case Temperature (°C)
80
100
120
140
160
0
20
40
60
0 10 20 30 40 50 60 70 80
VF - Forward Voltage Drop Characteristics (V)
IF - Forward Current (A)
4.02.01.0 3.0 5.0 7.0 8.06.0
0
160
200
0
40
80
120
TJ = 25 °C
TJ = 150 °C
TJ = 125 °C
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Fig. 5 - Typical IGBT Transfer Characteristics
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 7 - Typical IGBT Threshold Voltage
Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Losses vs. IC
TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 2.2 , VGE = 15 V
Diode used: HFA16PB120
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 720 V, Rg = 2.2 , VGE = 15 V
Diode used: HFA16PB120
VGE - Gate-to-Emitter Voltage (V)
IC - Collector to Emitter Current (A)
6.55.55.0 6.0 7.0 8.0 8.5 9.07.5
4.5
80
100
140
120
0
20
40
60 T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
VCES - Collector-to-Emitter Voltage (V)
ICES - Collector Current (A)
0 1200200 400 600 800 1000
0.0001
100
1
0.1
0.01
0.001
10
TJ = 25 °C
TJ = 125 °C
TJ = 150 °C
VGE(th) Threshold Voltage (V)
IC (mA)
3.5
4
4.5
5
5.5
6
2
2.5
3
0.20 0.40 0.60 0.80 1.00
TJ = 25 °C
TJ = 125 °C
T
J
-
Junction Temperature (°C)
V
CE
-
Collector-to-Emitter Current (A)
200 160
40 80 12060 100 140
0.8
1.2
1.6
2.2
2.4
1.0
1.4
1.8
2.0
I
C
= 100 A
I
C
= 80 A
I
C
= 60 A
I
C
= 40 A
0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
12.0
10 20 30 40 50 60 70 80 90 100 110 120
Energy (mJ)
IC(A)
Eon
Eoff
10
100
1000
10 20 30 40 50 60 70 80 90 100 110 120
Switching Time (ns)
IC(A)
tr
tf
td(on)
td(off)
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Fig. 11 - Typical IGBT Energy Losses vs. Rg
TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 720 V, VGE = 15 V
Diode used: HFA16PB120
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 720 V, IC = 100 A, VGE = 15 V
Diode used: HFA16PB120
Fig. 13 - Typical Reverse Recovery Time vs. dIF/dt, of Diode,
at IF = 50 A, VR = 400 V
Fig. 14 - Typical Stored Charge vs. dIF/dt of Diode,
at IF = 50 A, VR = 400 V
Fig. 15 - Typical Reverse Recovery Current vs. dIF/dt, of Diode,
at IF = 50 A, VR = 400 V
0
5
10
15
20
25
30
35
40
0 1020304050
Energy (mJ)
R
g
(Ω)
Eon
Eoff
10
100
1000
10000
0 1020304050
Switching Time (ns)
Rg(Ω)
tr
tf
td(off)
td(on)
trr (ns)
dIF/dt (A/μs)
100 1000
90
310
150
190
270
130
110
170
230
290
250
210 TJ = 125 °C
TJ = 25 °C
Qrr (nC)
dIF/dt (A/μs)
100 1000
0
3000
1000
1500
2500
2000
500
TJ = 125 °C
TJ = 25 °C
Irr (A)
dIF/dt (A/μs)
100 1000
0
45
25
35
40
20
30
10
15
5
T
J
= 25 °C
T
J
= 125 °C
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Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
Fig. 18 - IGBT Reverse Bias SOA, TJ = 150 °C, VGE = 15 V
0.01
0.1
1
0.001
0.0001 0.001 0.01 0.1 1 10
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.75
0.50
0.25
0.1
0.05
0.02
DC
Rectangular Pulse Duration (s)
Z
thJC - Thermal Impedance
Junction to Case (°C/W)
0.01
0.1
1
0.001
0.0001 0.001 0.01 0.1 1 10
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance
Junction to Case (°C/W)
0.75
0.50
0.25
0.1
0.05
0.02
DC
PDM
t2
t1
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
I
C
(A)
V
CE
(V)
1 10 100 1000 10 000
0.01
0.1
1
1000
10
100
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Fig. 19 - Clamped Inductive Load Test Circuit Fig. 19b - Pulsed Collector Current Test Circuit
Fig. 20a - Switching Loss Test Circuit
Fig. 20b - Switching Loss Waveforms Test Circuit
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
50 V
1000 V
D.U.T.
L
VC *
2
1
Rg
VCC
D.U.T.
R = VCC
ICM
+
-
L
Diode clamp/
D.U.T.
D.U.T./
driver
- 5 V
+
-
R
g
V
CC
+
-
t = 5 µs
t
d(on)
tf
tr
90 %
td(off)
10 %
90 %
10 %
5 %
VC
IC
Eon Eoff
Ets = (Eon + Eoff)
1
2
3
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ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch diode D
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
1
- Insulated Gate Bipolar Transistor (IGBT)
- Vishay Semiconductors product
2
- Trench IGBT technology
3
- Current rating (175 = 175 A)
4
- Circuit configuration (D = Single switch with antiparallel diode)
5
- Package indicator (A = SOT-227)
6
- Voltage rating (120 = 1200 V)
8
7
- Speed/type (U = Ultrafast)
Device code
51 32 4 6 7 8
GVS- T 175 D A 120 U
3 (C)
2 (G)
1, 4 (E)
1
43
2
Lead Assignment
Outline Dimensions
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SOT-227 Generation II
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
38.30 (1.508)
37.80 (1.488)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
30.50 (1.200)
29.80 (1.173)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256)
25.70 (1.012)
24.70 (0.972)
2.10 (0.083)
2.20 (0.087)
-B-
R full
2.20 (0.087)
1.90 (0.075)
8.30 (0.327)
7.70 (0.303)
4 x
4.10 (0.161)
4.50 (0.177)
-C-
0.13 (0.005)
12.30 (0.484)
11.70 (0.460)
25.00 (0.984)
25.50 (1.004)
M M M
0.25 (0.010) CA B
4 x M4 nuts
Legal Disclaimer Notice
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Disclaimer
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
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