QTR: 2014- 00364 Rev:
Package: LP2, LP2C, LP3, LP3B, LP3C, LP3D, LP3F, LP3G
Introduction
The Reliability tests summarized in this report are designed to satisfy the reliability requirements designated by
Hittite Microwave Corporation. The testing was devised to simulate exposure to environments the product may
experience during assembly, test, and life in the end user application. The pass/fail criteria are dependent upon DC
and critical RF parameters determined by the appropriate catalog specifications.
This report is intended to summarize all of the package reliability test data for the LP2, LP3, and their variants. The
data contained in this report includes all the stress testing performed on these packages to date and will be updated
periodically as additional data becomes available. Data sheets for the tested devices can be found at
www.hittite.com.
Glossary of Terms & Definitions:
1. Autoclave: A highly accelerated moisture stress test (unbiased). Devices are subjected to 96 hours of 100%
relative humidity at a temperature of 121°C and pressure (14.7 PSIG). This test is performed in accordance with
JEDEC JESD22-A102.
2. CDM: Charged Device Model. A specified ESD testing circuit characterizing an event that occurs when a device
acquires charge through some triboelectric (frictional) or electrostatic induction processes and then abruptly
touches a grounded object or surface. This test was performed in accordance with JEDEC 22-C101.
3. ESD: Electro-Static Discharge. A sudden transfer of electrostatic charge between bodies or surfaces at different
electrostatic potentials.
4. HAST: Highly Accelerated Stress Test (biased). Devices are subjected to 96 hours of 85% relative humidity at a
temperature of 130°C and pressure (18.6 PSIG), while DC biased. This test is performed in accordance with
JEDEC JESD22-A110.
5. HBM: Human Body Model. A specified ESD testing circuit characterizing an event that occurs when a device is
subjected to an electro-static charge stored in the human body and discharged through handling of the electronic
device. This test was performed in accordance with JEDEC 22-A114.
6. HTOL: High Temperature Operating Life. This test is used to determine the effects of bias conditions and
temperature on semiconductor devices over time. It simulates the devices’ operating condition in an accelerated
way, through high temperature and/or bias voltage, and is primarily for device qualification and reliability
monitoring. This test was performed in accordance with JEDEC JESD22-A108.
7. HTSL: High Temperature Storage Life. Devices are subjected to 1000 hours at 150oC per JESD22-A103.