GENERAL Sa conpucroR BC556 thru BC559 @ Small Signal Transistors (PNP) TO-226AA (TO-92) Features 0.181 (4.6) 0.142 (3.6) * PNP Silicon Epitaxial Planar Transistors for switch- j- l<>| ing and AF amplifier applications. * These transistors are subdivided into three groups A, B, and C according to their current gain. The type BC556 is available in groups A and B, however, the types BC557 and BC558 can be sup- plied in all three groups. The BC559 is a low-noise type available in all three groups. As complementary types, the NPN transistors BC546...BC549 are recommended. * On special request, these transistors are also manufactured in the pin configuration TO-18. min.0.492 (12.5) 0.181 (4.6) max.2 _ . 0.022 (0.55) j Mechanical Data 0822 (0554 : 0.098 (2.5) Dimensions in inches Case: TO-92 Plastic Package and (millimeters) Weight: approx. 0.18g Packaging Codes/Options: ce ore E6/Bulk 5K per container, 20K/box Bottom E7/4K per Ammo mag., 20K/box View B Max i mu m Rati n gs & Thermal Cc haracteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Value Unit BC556 80 Collector-Base Voltage BC557 -VcBo 50 Vv BC558, BC559 30 BC556 80 Collector-Emitter Voltage BC557 -VcES 50 Vv BC558, BC559 30 BC556 65 Collector-Emitter Voltage BC557 -VcCEO 45 Vv BC558, BC559 30 Emitter-Base Voltage -VEBO 5 Vv Collector Current -Ic 100 mA Peak Collector Current -Icm 200 mA Peak Base Current ~-IBM 200 mA Peak Emitter Current lem 200 mA Power Dissipation at Tamb = 25C Ptot 500 mw Thermal Resistance Junction to Ambient Air Raa 250 oCiW Junction Temperature Tj 150 c Storage Temperature Range Ts -65 to +150 iO} Note: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case. 4/7/00 60 {GENERAL 6 SEMICONDUCTOR BC556 thru BC559 Small Signal Transistors (PNP) Electrical Characteristics {Ta = 25C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Current gain group A Vee = Ine _ 220 Smail Signal Current Gain hie Ce a ice 2mA, _ 330 _ Cc _ 600 _ Current gain group A Vcr =5V,-Ic = 2mA 1.6 2.7 45 Input Impedance B| hie CE - ; kHe ms, 3.2 4.5 85 kQ Cc 6 8.7 15 Current gain group A Voce = 5V. -Ic = 2mA _ 18 30 Output Admittance hoe ee ike _ 30 60 uS Cc _ 60 110 Current gain group A _Vce = 5V.Ic = 2mA _ 15-104 Reverse Voltage Transfer Ratio B| bre ce i ceem: _ 2-104 _ f= 1kHz 4 Cc _ 3-10 _ Current gain group A _ 90 B -Vce = 5V, -Ic = 10nA _ 150 _ Cc _ 270 _ Current gain group A 110 180 220 DC Current Gain hre -Vce = 5V, -Ic = 2mMA 200 290 450 _ Cc 420 500 800 Current gain group A _ 120 _ B VcE = 5V, Ic = 100mA _ 200 Cc _ 400 _ . -Io = 10mA, -Ip = 0.5mA _ 80 300 Collector Saturation Voltage VcEsat ~lo = 100mA, -Ip = 5mA _ 250 650 mV . -Ic = 10mA, -IB = 0.5mA 700 _ Base Saturation Voltage VBEsat ~Ic = 100mA, Ie = 5mA _ 900 _ mV : VceE = 5V, -Ic =2mA 600 660 750 7 -V ' Base-Emitter Voltage BE -Vog = 5V,-Ic = 10mA _ _ 800 mV BC556 -Vce = 80V _ 0.2 16 nA Collector-Emitter BC557 Vce = 50V _ 0.2 15 nA Cutoff Current BC558 IcEs VcE = 30V _ 0.2 15 nA BC556 VcE = 80V, Tj = 125C _ _ 4 pA BC557 -VcE = 50V, Tj = 125C _ _ 4 pA BC558, BC559 -VcE = 30V, Tj = 125C _ _ 4 pA . : VceE = 5V, -Ic = 10mMA. - , _ 1 _ MH Gain-Bandwidth Product TT f= 100MHz 50 Zz Collector-Base Capacitance CcBo Vcs = 10V, f = 1MHz _ 6 pF Noise Figure BCS556, BC5S57, BC558 Vee = SV, Io = 200A, | __ 2 10 BC559 Re = 2kQ, f = 1kHz, _ 1 4 F Af = 200Hz dB BC559 Vce = 5V, Ic = 200pA, _ 12 4 Re =2kQ, f = 30...15000Hz 61 id pi [=] pad Rg a = so pe - o i=) a [= =} A BC556 thru BC559 Small Signal Transistors (PNP) Ratings and Characteristic Curves 15 - 25-c uniess oinerwise noted) Admissible power dissipation Pulse thermal resistance versus temperature versus pulse duration Valid provided that leads are kept at ambient Valid provided that leads are kept at ambient temperature at a distance of 2 mm trom case temperature at a distance of 2 mm from case mw BC556...BC559 C/iwW BC556...BC559 0 100 200C * Tam DC current gain Collector-base cutoff current versus collector current versus junction temperature BCS556...BC559 nA BC556, BC559 10 y 7 10 cao 4 / 407 f L LH | 1 10 f 7 Test voltag Mego! equal to the given 1 maximum value -Vo9 _| yee 4 fi > + 2 10 5 10 10 1 10 10 mA 0 100 200C Fj 62 {). GENERAL , CG SEMICONDUCTOR Ratings and BC556 thru BC559 Small Signal Transistors (PNP) Characteristic Curves cs - 25 untess otherwise noted) Collector current versus base-emitter voltage mA BCS556...BC559 Meg = 5V 107 Bh Oo aa ne a y wae 1077 Collector-base capacitance, Emitter-base capacitance versus reverse bias voltage pF BC556...BC559 20 O12 5 1 2 s 10V eso, -Yezo Collector saturation voltage versus collector current v BCS56...BC559 0 1072 s 1 2 s 10 2 5 10?mA + Relative h-parameters versus collector current BC556.,.BC559 10? Miele) * hg Clg= 2 mA) 10 5 4 10" 63 n pd i=} ar) 2 wn = os = - 3 i=} = [= =} GENERAL Ee Sane pUCTOR BC556 thru BC559 Small Signal Transistors (PNP) Ratings and Characteristic Cc urves (Ta = 25C unless otherwise noted) Gain-bandwidth product Noise figure versus collector current versus collector current MHz BC556...BC559 dB BCS559 =5V 18 |f=120Hz Gb = 25C 16 amb F 1 100 kV / 10 kV AkV 14 500 V 12 10 8 6 4 2 9 O12 5s 1 2 5 102 5 100mA i? = 107 407 1 10 mA le le Noise figure Noise figure versus collector current versus collector-emitter voltage dB BC559 10 10? 107 1 10mA 64