2KBP005M thru 2KBP10M, 3N253 thru 3N259 Vishay General Semiconductor Glass Passivated Single-Phase Bridge Rectifier FEATURES * UL recognition file number E54214 * Ideal for printed circuit board e4 * High surge current capability * High case dielectric strength - ~ ~ + ~ ~ - * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC + Case Style KBPM TYPICAL APPLICATIONS General purpose use in ac-to-dc bridge full wave rectification for switching power supply, home appliances, office equipment, and telecommunication applications. PRIMARY CHARACTERISTICS IF(AV) 2A VRRM 50 V to 1000 V IFSM 60 A IR 5 A MECHANICAL DATA Case: KBPM VF 1.1 V Epoxy meets UL 94V-0 flammability rating TJ max. 165 C Terminals: Silver plated leads, solderable per J-STD-002 and JESD22-B102 E4 suffix for consumer grade Polarity: As marked on body MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL 2KBP 005M 2KBP 01M 2KBP 02M 2KBP 04M 2KBP 06M 2KBP 08M 2KBP 10M 3N253 3N254 3N255 3N256 3N257 3N258 3N259 100 200 400 600 800 1000 V Maximum repetitive peak reverse voltage VRRM 50 Maximum RMS voltage UNIT VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Max. average forward output rectified current at TA = 55 C IF(AV) 2.0 A Peak forward surge current single half sine-wave superimposed on rated load IFSM 60 A I2t 15 A 2s TJ, TSTG - 55 to + 165 C Rating for fusing (t < 8.3 ms) Operating junction and storage temperature range Document Number: 88532 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 2KBP005M thru 2KBP10M, 3N253 thru 3N259 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) TEST CONDITIONS PARAMETER SYMBOL 2KBP 005M 2KBP 01M 2KBP 02M 2KBP 04M 2KBP 06M 2KBP 08M 2KBP 10M 3N253 3N254 3N255 3N256 3N257 3N258 3N259 UNIT Maximum instantaneous forward voltage drop per diode 3.14 A VF 1.1 V Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 C TA = 125 C IR 5.0 500 A Typical junction capacitance per diode 4.0 V, 1 MHz CJ 25 pF THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL 2KBP 005M 2KBP 01M 2KBP 02M 2KBP 04M 2KBP 06M 2KBP 08M 2KBP 10M 3N253 3N254 3N255 3N256 3N257 3N258 3N259 RJA RJL Typical thermal resistance (1) 30 11 UNIT C/W Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with, 0.47 x 0.47" (12 x 12 mm) copper pads ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 2KBP06M-E4/45 1.895 45 30 Tube 2KBP06M-E4/51 1.895 51 600 Anti-static PVC tray 3N257-E4/45 1.895 45 30 Tube 3N257-E4/51 1.895 51 600 Anti-static PVC tray RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 60 60 Hz Resistive or Inductive Load 1.5 P.C.B. Mounted with 0.47 x 0.47" (12 x 12 mm) Copper Pads 1.0 Capacitive Load 0.5 I(pk) = 5.0 10 I(AV) (Per Leg) 20 Peak Forward Surge Current (A) Average Forward Output Current (A) 2.0 TJ = 150 C Single Sine-Wave 50 40 30 20 10 1.0 Cycle 0 0 20 40 60 80 100 120 140 160 170 1 10 100 Ambient Temperature (C) Number of Cycles at 60 Hz Figure 1. Derating Curve Output Rectified Current Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88532 Revision: 15-Apr-08 2KBP005M thru 2KBP10M, 3N253 thru 3N259 Vishay General Semiconductor 100 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 10 1 TJ = 25 C Pulse Width = 300 s 1 % Duty Cycle 0.1 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.1 0.01 0 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p 1.4 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Figure 3. Typical Forward Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode Instantaneous Reverse Current (A) 100 TJ = 125 C 10 TJ = 100 C 1 0.1 TJ = 25 C 0.01 0 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Leakage Characteristics Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Case Style KBPM 0.600 (15.24) 0.560 (14.22) 0.125 x 45 (3.2) 0.460 (11.68) 0.500 (12.70) 0.420 (10.67) 0.460 (11.68) 0.60 (15.2) MIN. 0.034 (0.86) 0.028 (0.76) DIA. 0.200 (5.08) 0.180 (4.57) 0.50 (12.7) MIN. 0.060 (1.52) 0.160 (4.1) 0.140 (3.6) 0.105 (2.67) 0.085 (2.16) Polarity shown on front side of case: positive lead by beveled corner Document Number: 88532 Revision: 15-Apr-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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