FDV302P_NL - Fairchild Semiconductor

October 1997

FDV302P

Digital FET, P-Channel

General Description Features

Absolute Maximum Ratings TA = 25oC unless otherwise noted

Symbol Parameter FDV302PUnits

VDSS Drain-Source Voltage -25 V

VGSS Gate-Source Voltage -8 V

IDDrain Current - Continuous -0.12 A

- Pulsed -0.5

PDMaximum Power Dissipation 0.35 W

TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C

ESD Electrostatic Discharge Rating MIL-STD-883D

Human Body Model (100pf / 1500 Ohm) 6.0 kV

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient 357 °C/W

FDV302P REV. F

-25 V, -0.12 A continuous, -0.5 A Peak.

RDS(ON) = 13 Ω @ VGS= -2.7 V

RDS(ON) = 10 Ω @ VGS = -4.5 V.

Very low level gate drive requirements allowing direct

operation in 3V circuits. VGS(th) < 1.5V.

Gate-Source Zener for ESD ruggedness.

>6kV Human Body Model

Compact industry standard SOT-23 surface mount

package.

Replace many PNP digital transistors (DTCx and DCDx)

with one DMOS FET.

This P-Channel logic level enhancement mode field effect

transistor is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

especially tailored to minimize on-state resistance. This

device has been designed especially for low voltage

applications as a replacement for digital transistors. Since

bias resistors are not required, this one P-channel FET can

replace several digital transistors with different bias resistors

such as the DTCx and DCDx series.

Mark:302

S

D

G

SOT-23 SuperSOTTM-8 SOIC-16

SO-8 SOT-223

SuperSOTTM-6

Electrical Characteristics (TA = 25 OC unless otherwise noted )

Symbol Parameter Conditions Min Typ Max Units

OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -25 V

∆BVDSS/∆TJBreakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 o C-20 mV / oC

IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V -1 µA

TJ = 55°C -10 µA

IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V -100 nA

ON CHARACTERISTICS (Note)

∆VGS(th)/∆TJGate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC1.9 mV / oC

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-0.65 -1 -1.5 V

RDS(ON) Static Drain-Source On-Resistance VGS = -2.7 V, ID = -0.05 A10.6 13 Ω

VGS = -4.5 V, ID = -0.2 A7.9 10

TJ =125°C 12 18

ID(ON) On-State Drain Current VGS = -2.7 V, VDS = -5 V -0.05 A

gFS Forward Transconductance VDS = -5 V, ID= -0.2 A 0.135 S

DYNAMIC CHARACTERISTICS

Ciss Input Capacitance VDS = -10 V, VGS = 0 V,

f = 1.0 MHz 11 pF

Coss Output Capacitance 7 pF

Crss Reverse Transfer Capacitance 1.4 pF

SWITCHING CHARACTERISTICS (Note)

tD(on)Turn - On Delay Time VDD = -6 V, ID = -0.2 A,

VGS = -4.5 V, RGEN = 50 Ω5 12 ns

trTurn - On Rise Time 8 16 ns

tD(off) Turn - Off Delay Time 9 18 ns

tfTurn - Off Fall Time 5 10 ns

QgTotal Gate Charge VDS = -5 V, ID = -0.2 A,

VGS = -4.5 V 0.22 0.31 nC

Qgs Gate-Source Charge 0.11 nC

Qgd Gate-Drain Charge 0.04 nC

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

ISMaximum Continuous Drain-Source Diode Forward Current -0.2 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.2 A (Note)-1 -1.5 V

Note:

Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDV302P REV. F

01234

0

0.05

0.1

0.15

0.2

-V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN-SOURCE CURRENT (A)

V = -5.0V

GS

DS

D

-4.5

-2.7

-2.5

-2.0

-3.0

-3.5

-4.0

00.05 0.1 0.15 0.2

0.5

1

1.5

2

-I , DRAIN CURRENT (A)

DRAIN-SOURCE ON-RESISTANCE

R , NORMALIZED

V = -2.0 V

GS

D

DS(ON)

-3.5

-4.5

-2.7

-2.5

-3.0

-4.0

Typical Electrical Characteristics

Figure 1. On-Region Characteristics.Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

Figure 3. On-Resistance Variation

with Temperature.

0.5 11.5 22.5 3

0

0.02

0.04

0.06

0.08

-V , GATE TO SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

V = -5V

DS

GS

D

T = -55°C

A

125°C

25°C

Figure 5. Transfer Characteristics.

0.2 0.4 0.6 0.8 11.2

0.0001

0.001

0.01

0.1

0.5

-V , BODY DIODE FORWARD VOLTAGE (V)

-I , REVERSE DRAIN CURRENT (A)

T = 125°C

J

25°C

-55°C

V = 0V

GS

SD

S

Figure 6. Body Diode Forward Voltage

Variation with Source Current and

Temperature.

Figure 4. On Resistance Variation with

Gate-To- Source Voltage.

-50 -25 025 50 75 100 125 150

0.6

0.8

1

1.2

1.4

1.6

T , JUNCTION TEMPERATURE (°C)

DRAIN-SOURCE ON-RESISTANCE

J

R , NORMALIZED

DS(ON)

V = -2.7V

GS

I = -0.05A

D

012345678

0

5

10

15

20

25

-V ,GATE TO SOURCE VOLTAGE (V)

R ,ON-RESISTANCE (OHM)

GS

DS(ON)

I = -0.05A

D

T = 25°C

A 125 °C

FDV302P REV. F

0.001 0.01 0.1 110 100 300

0

1

2

3

4

5

SINGLE PULSE TIME (SEC)

POWER (W)

SINGLE PULSE

R =357° C/W

T = 25°C

θJA

A

Figure 10. Single Pulse Maximum Power

Dissipation.

0.0001 0.001 0.01 0.1 110 100 300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1

t , TIME (sec)

TRANSIENT THERMAL RESISTANCE

Duty Cycle, D = t /t

1 2

R (t) = r(t) * R

R = 357 °C/W

θJA

T - T = P * R (t)

θJA

A

J

P(pk)

t

1 t

2

r(t), NORMALIZED EFFECTIVE

1

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

Figure 11. Transient Thermal Response Curve.

0.1 0.3 1 2 5 10 15 25

1

2

3

5

10

15

25

-V , DRAIN TO SOURCE VOLTAGE (V)

CAPACITANCE (pF)

DS

C

iss

f = 1 MHz

V = 0 V

GS

C

oss

C

rss

Figure 8. Capacitance Characteristics.

Figure 7. Gate Charge Characteristics.

Figure 9. Maximum Safe Operating Area.

Typical Electrical And Thermal Characteristics

00.1 0.2 0.3 0.4 0.5

0

2

4

6

8

Q , GATE CHARGE (nC)

-V , GATE-SOURCE VOLTAGE (V)

g

GS

V = -5V

DS -10

-15

I = -0.2A

D

12 5 10 15 20 30 40

0.01

0.02

0.05

0.1

0.2

0.5

1

- V , DRAIN-SOURCE VOLTAGE (V)

-I , DRAIN CURRENT (A)

RDS(ON) LIMIT

D

DC

DS

1s

100ms

1ms

10s

V = -2.7V

SINGLE PULSE

R = 357 °C/W

T = 25°C

GS

A

θJA