SBAS20LT1G - ON Semiconductor L.L.C.

November, 2011 − Rev. 13

1Publication Order Number:

BAS19LT1/D

BAS19L, BAS20L, SBAS20L,

BAS21L, SBAS21L,

BAS21DW5, SBAS21DW5

High Voltage

Switching Diode

Features

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Continuous Reverse Voltage

BAS19

BAS20, SBAS20

BAS21, SBAS21

VR120

200

250

Vdc

Repetitive Peak Reverse Voltage

BAS19

BAS20, SBAS20

BAS21, SBAS21

VRRM 120

200

250

Vdc

Continuous Forward Current IF200 mAdc

Peak Forward Surge Current IFM(surge) 625 mAdc

Junction and Storage Temperature

Range

TJ, Tstg −55 to

+150

°C

Power Dissipation (Note 1) PD385 mW

Electrostatic Discharge ESD HM < 500

MM < 400

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

HIGH VOLTAGE

SWITCHING DIODE

CATHODE

ANODE

MARKING DIAGRAMS

http://onsemi.com

CATHODE

ANODE

CATHODE

ANODE

SOT−23 (TO−236)

CASE 318

STYLE 8

SC−88A (SOT−353)

CASE 419A

SOT−23

SC−88A

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

Jx M G

x = P, R, or S

P = BAS19LT1

R = BAS20L, SBAS20L

S = BAS21L, SBAS21L or

BAS21DW5T1, SBAS21DW5

M = Date Code

G= Pb−Free Package

Jx M G

321

*Date Code orientation and/or overbar may vary

depending upon the manufacturing location.

(Note: Microdot may be in either location)

BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5

http://onsemi.com

THERMAL CHARACTERISTICS (SOT−23)

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 2)

TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance

Junction−to−Ambient (SOT−23)

RJA 556 °C/W

Total Device Dissipation Alumina Substrate

(Note 3)

TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance Junction−to−Ambient RJA 417 °C/W

Junction and Storage

Temperature Range

TJ, Tstg

−55 to +150 °C

THERMAL CHARACTERISTICS (SC−88A)

Characteristic Symbol Max Unit

Power Dissipation (Note 4) PD385 mW

Thermal Resistance −

Junction−to−Ambient

Derate Above 25°C

RJA 328

3.0

°C/W

mW/°C

Maximum Junction Temperature TJmax 150 °C

Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C

2. FR−5 = 1.0 0.75 0.062 in.

3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.

4. Mounted on FR−5 Board = 1.0 x 0.75 x 0.062 in.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

Reverse Voltage Leakage Current

(VR = 100 Vdc) BAS19

(VR = 150 Vdc) BAS20, SBAS20

(VR = 200 Vdc) BAS21, SBAS21

(VR = 100 Vdc, TJ = 150°C) BAS19

(VR = 150 Vdc, TJ = 150°C) BAS20, SBAS20

(VR = 200 Vdc, TJ = 150°C) BAS21, SBAS21

−

0.1

100

Adc

Reverse Breakdown Voltage

(IBR = 100 Adc) BAS19

(IBR = 100 Adc) BAS20, SBAS20

(IBR = 100 Adc) BAS21, SBAS21

V(BR)

120

200

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

−

1.0

1.25

Vdc

Diode Capacitance (VR = 0, f = 1.0 MHz) CD−5.0 pF

Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100) trr −50 ns

BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5

http://onsemi.com

Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

+10 V 2.0 k

820 

0.1 F

D.U.T.

100 H

0.1 F

50  OUTPUT

PULSE

GENERATOR

50  INPUT

SAMPLING

OSCILLOSCOPE

trtpt

10%

90%

trr t

IR(REC) = 3.0 mA

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at IR(REC) = 3.0 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

VF, FORWARD VOLTAGE (V)

0.1

VR, REVERSE VOLTAGE (V)

1.0

0.1

0.01

0.001

50 80 110 140 170

1.6

VR, REVERSE VOLTAGE (V)

1.4

1.0

0.6

0.4

CD, DIODE CAPACITANCE (pF)

246 8

IF, FORWARD CURRENT (mA)

Figure 2. VF vs. IFFigure 3. IR vs. VR

Figure 4. Capacitance

IR, REVERSE CURRENT (μA)

1.0

100

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

85°C

55°C

150°C

125°C

25°C

-55°C

200 230

0.8

1.2

1357

Cap

-40°C

260

150°C

125°C

85°C

55°C

25°C

BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5

http://onsemi.com

ORDERING INFORMATION

Device Package Shipping†

BAS19LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BAS19LT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

BAS20LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BAS20LT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

SBAS20LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BAS21LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

SBAS21LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BAS21LT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

SBAS21LT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

BAS21DW5T1G SC−88A

(Pb−Free)

3000 / Tape & Reel

SBAS21DW5T1G SC−88A

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

BAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5, SBAS21DW5

http://onsemi.com

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419A−01 OBSOLETE. NEW STANDARD

419A−02.

4. DIMENSIONS A AND B DO NOT INCLUDE

MOLD FLASH, PROTRUSIONS, OR GATE

BURRS.

DIM

MIN MAX MIN MAX

MILLIMETERS

1.80 2.200.071 0.087

INCHES

B1.15 1.350.045 0.053

C0.80 1.100.031 0.043

D0.10 0.300.004 0.012

G0.65 BSC0.026 BSC

H--- 0.10---0.004

J0.10 0.250.004 0.010

K0.10 0.300.004 0.012

N0.20 REF0.008 REF

S2.00 2.200.079 0.087

B0.2 (0.008) MM

12 3

D 5 PL

−B−

SC−88A (SC−70−5/SOT−353)

CASE 419A−02

ISSUE K

ǒmm

inchesǓ

SCALE 20:1

0.65

0.025

0.65

0.025

0.50

0.0197

0.40

0.0157

1.9

0.0748

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BAS19LT1/D

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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

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For additional information, please contact your local

Sales Representative