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SEMICONDUCTOR
TECHNICAL DATA
BC328
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
·High Current : IC=-800mA.
·DC Current Gain : hFE=100630 (VCE=-1V, Ic=-100mA).
·For Complementary with NPN type BC338.
MAXIMUM RATING (Ta=25)
ELECTRICAL CHARACTERISTICS (Ta=25)
Note : hFE Classification none:100630, 16:100250, 25:160400, 40:250630
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -30 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-800 mA
Emitter Current IE800 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Range Tstg -55150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-25V, IE=0 - - -100 nA
DC Current Gain (Note) hFE VCE=-1V, IC=-100mA 100 - 630
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - - -0.7 V
Base-Emitter Voltage VBE(ON) VCE=-1V, IC=-300mA - - -1.2 V
Transition Frequency fTVCE=-5V, IC=-10mA, f=100MHz - 100 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 -16-pF
2000. 2. 28 2/2
BC328
Revision No : 2