IRG4BC20KD-SPbF
Parameter Min. Typ. Max. Units Conditions
QgTotal Gate Charge (turn-on) 34 51 IC = 9.0A
Qge Gate - Emitter Charge (turn-on) 4.9 7.4 nC VCC = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) 14 21 VGE = 15V
td(on) Turn-On Delay Time 54
trRise Time 34 TJ = 25°C
td(off) Turn-Off Delay Time 180 270 IC = 9.0A, VCC = 480V
tfFall Time 72 110 VGE = 15V, RG = 50Ω
Eon Turn-On Switching Loss 0.34 Energy losses include "tail"
Eoff Turn-Off Switching Loss 0.30 mJ and diode reverse recovery
Ets Total Switching Loss 0.64 0.96 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 µs VCC = 360V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
td(on) Turn-On Delay Time 51 TJ = 150°C, See Fig. 11,14
trRise Time 37 IC = 9.0A, VCC = 480V
td(off) Turn-Off Delay Time 220 VGE = 15V, RG = 50Ω
tfFall Time 160 Energy losses include "tail"
Ets Total Switching Loss 0.85 mJ and diode reverse recovery
LEInternal Emitter Inductance 7.5 nH Measured 5mm from package
Cies Input Capacitance 450 VGE = 0V
Coes Output Capacitance 61 pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance 14 = 1.0MHz
trr Diode Reverse Recovery Time 37 55 ns TJ = 25°C See Fig.
5590 T
J = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current 3.5 5.0 A TJ = 25°C See Fig.
4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge 65 138 nC TJ = 25°C See Fig.
124 360 TJ = 125°C 16 di/dt = 200Aµs
di(rec)M/dt Diode Peak Rate of Fall of Recovery 240 A/µs TJ = 25°C See Fig.
During tb 210 TJ = 125°C 17
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage600 V VGE = 0V, IC = 250µA
∆V(BR)CES/∆T
JTemperature Coeff. of Breakdown Voltage 0.49 V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage 2.27 2.8 IC = 9.0A VGE = 15V
3.01 V IC = 16A See Fig. 2, 5
2.43 IC = 9.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJTemperature Coeff. of Threshold Voltage -10 mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance 2.9 4.3 S VCE = 100V, IC = 9.0A
ICES Zero Gate Voltage Collector Current 250 µA VGE = 0V, VCE = 600V
1000 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop 1.4 1.7 V IC = 8.0A See Fig. 13
1.3 1.6 IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns