DSEE29-12CC
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
I
FSM
I
R
A
V
200
IA
V
F
1.62
R0.90 K/W
V
R
=
1 2 3
min.
30
t = 10 ms
Applications:
V
RRM
V600
500T
VJ
V°C=
T
VJ
°C=mA1
Package:
Part number
V
R
=
T
VJ
=°C
I
F
=A
V
T
C
=130°C
d =
P
tot
165 WT
C
°C=
T
VJ
175 °C-55
V
I
RRM
=
=600
30
30
T
VJ
=45°C
DSEE29-12CC
V
A
600
V600
25
25
25
max. repe titiv e re verse vo l t a g e
reverse current
forward voltage
virt ua l j un ctio n temp e r ature
total power dissipation
max. forward surge current
Conditions Unit
1.95
T
VJ
°C=25
C
J
j
unction capacitance V = V; T
150
V
F0
V1.00T
VJ
=175°C
r
F
10
f = 1 MHz = °C25
mΩ
V1.27T
VJ
=°C
I
F
=A
V
30
1.58
I
F
=A60
I
F
=A60
threshold voltage
slope resistance for power loss calculation only
Backside: isolated
17 A
T
VJ
=°C
reverse recovery time
A29
35
90
ns
(50 Hz), sine
t
rr
=35 ns
● Housing:
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
ISOPLUS220
●
rIndustry standard outline
●
rDCB isolated backside
●
rIsolation Voltage 3000 V
●
rEpoxy meets UL 94V-0
●
rRoHS compliant
RVJ
I
RM
max. reverse recovery current
I
F
=A;30
25
T=100°C
VJ
-di
F
=A/µs600/dtt
rr
V
R
=V300
T
VJ
=°C25
T=100°C
VJ
µA
26400 pF
thermal resistance junction to case
thJC
rectangular 0.5
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
FAV
average forward current
FAV
150
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEE29-12CC
1.0
3.0
I
RMS
A
per terminal 35
R
thCH
K/W0.50
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition Ratings
typ. max.min.Conditions
RMS current
thermal resistance case to heatsink
Unit
F
C
N60
mount ing forc e with cl ip 20
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DSEE29-12CC 500694Tube 50
Product Mar
k
in
Date Code
Part No.
Logo
Order Code
IXYS
abcd
UL listed
DSEE30-12A TO-247AD (3)
Similar Part Package
Marking on Product
DSEE29-12CC
600
Voltage Class
V
ISOL
V3600
t = 1 second
V3000
t = 1 minute
isolation voltage
d
Spp/App
mm
mm
creepage | striking distance on surface | through air terminal to terminal
d
Spb/Apb
creepage | striking distance on surface | through air terminal to backside
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEE29-12CC
T
12 3
EAE1
D1
D
L1
L
b4
2x b2
2x e
3x b
A1
c
D3
A2
D2
W
Die konvexe Form des Substrates ist typ. < 0.04 mm über der
Kunststoffoberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic
surface level of device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-273
gemäß JEDEC außer D und D1
.
This drawing will meet all dimensions requiarement of JEDEC
outline TO-273 except D and D1
.
minmaxminmax
A 4.00 5.00 0.157 0.197
A1 2.50 3.00 0.098 0.118
A2 1.60 1.80 0.063 0.071
b 0.90 1.30 0.035 0.051
b2 2.35 2.55 0.093 0.100
b4 1.25 1.65 0.049 0.065
c 0.70 1.00 0.028 0.039
D 15.00 16.00 0.591 0.630
D1 12.00 13.00 0.472 0.512
D2 1.10 1.50 0.043 0.059
D3 14.90 15.50 0.587 0.610
E 10.00 11.00 0.394 0.433
E1 7.50 8.50 0.295 0.335
e 2.54 BSC 0.100 BSC
L 13.00 14.50 0.512 0.571
L1 3.00 3.50 0.118 0.138
T° 42.5 47.5
W - 0.1 - 0.004
Dim.
Millimeters Inches
Outlines ISOPLUS220
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved
DSEE29-12CC
200 600 10000 400 800
70
80
90
100
110
120
130
0.001 0.01 0.1 1 10
0.01
0.1
1
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
t
0 200 400 600 800 1000
0
5
10
15
20
0.0
0.3
0.6
0.9
1.2
200 600 10000 400 800
0
10
20
30
40
50
0001001
0
500
1000
1500
2000
2500
3000
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
70
A
DSEE 29-12CC
T
VJ
=25°C
I
RM
Q
r
V
FR
T
VJ
= 100°C
V
R
=300V
T
VJ
= 100°C
V
R
= 300 V
t
rr
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
T
VJ
= 100°C
I
F
= 30 A
I
F
[A]
V
F
[V]
Q
r
[nC]
-di
F
/dt [A/µs]
I
RM
[A]
-di
F
/dt [A/µs]
K
f
T
VJ
[°C]
t
rr
[ns]
-di
F
/dt [A/µs]
t
fr
[µs]
-di
F
/dt [A/µs]
V
FR
[V]
t[s]
Z
thJC
[K/W]
Fig. 1 Forward current I
F
vs. V
F
Fig. 2 Typ. reverse recovery charge
Q
r
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
,I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage V
FR
and typ. forward recovery time
t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
T
VJ
= 100°C
T
VJ
= 150°C I
F
=60 A
I
F
=30 A
I
F
=15 A
T
VJ
= 100°C
V
R
= 300 V
Constants for Z
thJC
calculation:
iR
thi
(K/W) t
i
(s)
1 0.038 0.00024
2 0.07 0.0036
3 0.245 0.0235
4 0.198 0.1421
5 0.35 0.25
IXYS reserves the right to change limits, conditions and dimensions.
©
20110215a
Data according to IEC 60747and per diode unless otherwise specified
2011 IXYS all rights reserved