LT2349E P-Channel 20-V (D-S) MOSFET, ESD Protection GENERAL DESCRIPTION FEATURES The LT2349E is the P-Channel logic enhancement mode power field RDS(ON) 75m@VGS= -10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 95m@VGS= -4.5V technology. This high density process is especially tailored to RDS(ON) 140m@VGS= -2.5V minimize on-state resistance. These devices are particularly suited Super high density cell design for extremely low RDS(ON) for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits APPLICATIONS where high-side switching , and low in-line power loss are needed in Power Management in Note book Portable Equipment a very small outline surface mount package. Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION (SOT-23) Top View Absolute Maximum Ratings (TA=25 Unless Otherwise Noted) Parameter Symbol Steady State Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS 12 V Continuous Drain TA=25 Current(Tj=150)* TA=70 Pulsed Drain Current Continuous Source Current (Diode Conduction) Maximum Power Dissipation* -1.88 ID IDM -10 A IS -1.7 A TA=25 TA=70 Operating Junction Temperature Thermal Resistance-Junction to Ambient* A -1.5 0.63 PD W 0.4 TJ RJA -55 to 150 Typ 90 Max 125 /W 2 *The device mounted on 1in FR4 board with 2 oz copper Rev 2. Oct. 2010 01 LT2349E P-Channel 20-V (D-S) MOSFET, ESD Protection Electrical Characteristics (TA =25 Unless Otherwise Specified) Symbol Parameter Limit Min Typ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250A -0.5 IGSS Gate Leakage Current Max Unit STATIC IDSS Zero Gate Voltage Drain Current -1 V VDS=0V, VGS=12V 15 A VDS=-30V, VGS=0V -1 A VDS=-30V, VGS=0V -5 TJ=70 RDS(ON) VSD Drain-Source On-Resistance Diode Forward Voltage VGS=-10V, ID= -2.0A 65 75 VGS=-4.5V, ID= -1.3A 75 95 VGS=-2.5V, ID= -1.0A 100 140 IS=-1.7A, VGS=0V 0.8 m V DYNAMIC Ciss Input Capacitance COSS Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time 427 VDS=-15V, VGS=0V, f=1MHZ 60 pF 15 f=1MHz VDS=-15V, VGS=-10V, ID=-20A 9 6.5 2.4 nC 1.5 VDD=-15V, RL =15 ID=-1.0A, VGEN=-10V RG=6 19 8 ns 43 4.4 Notes: a. Pulse test; pulse width 300us, duty cycle 2% Rev 2. Oct. 2010 02 LT2349E P-Channel 20-V (D-S) MOSFET, ESD Protection Typical Characteristics (TJ =25 Noted) Rev 2. Oct. 2010 03 LT2349E P-Channel 20-V (D-S) MOSFET, ESD Protection Typical Characteristics (TJ =25 Noted) Rev 2. Oct. 2010 04 LT2349E P-Channel 20-V (D-S) MOSFET, ESD Protection SOT-23 Package Outline DIM Rev 2. Oct. 2010 MILLIMETERS (mm) MIN MAX A 2.80 3.00 B 1.20 1.70 C 0.90 1.30 D 0.35 0.50 G 1.78 2.04 H 0.010 0.15 J 0.085 0.20 K 0.30 0.65 L 0.89 1.02 S 2.10 3.00 V 0.45 0.60 05 LT2349E P-Channel 20-V (D-S) MOSFET, ESD Protection Important Notice and Disclaimer LSC reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. LSC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does LSC assume any liability for application assistance or customer product design. LSC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. No license is granted by implication or otherwise under any intellectual property rights of LSC. LSC products are not authorized for use as critical components in life support devices or systems without express written approval of LSC. Rev 2. Oct. 2010 06