PD - 94634A IRF1404Z IRF1404ZS IRF1404ZL AUTOMOTIVE MOSFET Features HEXFET(R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS(on) = 3.7m G Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings ID = 75A S D2Pak IRF1404ZS TO-220AB IRF1404Z Parameter TO-262 IRF1404ZL Max. ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V Units 190 A 130 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM 750 PD @TC = 25C Power Dissipation 220 W Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value EAS (Tested ) 1.5 20 W/C V 320 mJ 75 c d c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range h g A mJ -55 to + 175 C Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Thermal Resistance i Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat Greased Surface RJA Junction-to-Ambient RJA 480 See Fig.12a, 12b, 15, 16 i Junction-to-Ambient (PCB Mount) i j www.irf.com 300 (1.6mm from case ) y y 10 lbf in (1.1N m) Typ. Max. Units --- 0.65 C/W 0.50 --- --- 62 --- 40 1 8/28/03 http://store.iiic.cc/ IRF1404ZS_L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage 40 --- --- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.033 --- RDS(on) Static Drain-to-Source On-Resistance --- 2.7 3.7 VGS(th) Gate Threshold Voltage 2.0 --- 4.0 gfs IDSS Forward Transconductance 170 --- Drain-to-Source Leakage Current --- --- --- --- 250 --- --- 200 IGSS Gate-to-Source Forward Leakage V Conditions VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 75A e V VDS = VGS, ID = 250A --- V VDS = 25V, ID = 75A 20 A VDS = 40V, VGS = 0V nA VGS = 20V VDS = 40V, VGS = 0V, TJ = 125C Gate-to-Source Reverse Leakage --- --- -200 Qg Total Gate Charge --- 100 150 VGS = -20V Qgs Gate-to-Source Charge --- 31 --- Qgd Gate-to-Drain ("Miller") Charge --- 42 --- td(on) Turn-On Delay Time --- 18 --- VDD = 20V tr Rise Time --- 110 --- ID = 75A td(off) Turn-Off Delay Time --- 36 --- tf Fall Time --- 58 --- VGS = 10V LD Internal Drain Inductance --- 4.5 --- Between lead, LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Input Capacitance --- 4340 --- and center of die contact VGS = 0V Coss Output Capacitance --- 1030 --- Crss Reverse Transfer Capacitance --- 550 --- Coss Output Capacitance --- 3300 --- VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 920 --- VGS = 0V, VDS = 32V, = 1.0MHz Coss eff. Effective Output Capacitance --- 1350 --- VGS = 0V, VDS = 0V to 32V ID = 75A nC VDS = 32V VGS = 10V ns nH RG = 3.0 e e VDS = 25V pF = 1.0MHz f Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 750 VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V trr Reverse Recovery Time --- 28 42 ns Qrr Reverse Recovery Charge --- 34 51 nC ton Forward Turn-On Time c Conditions MOSFET symbol A showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A, VGS = 0V e TJ = 25C, IF = 75A, VDD = 20V di/dt = 100A/s e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com http://store.iiic.cc/ IRF1404ZS_L 1000 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 TOP ID, Drain-to-Source Current (A) TOP ID, Drain-to-Source Current (A) 1000 VGS 10 4.5V 1 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 20s PULSE WIDTH Tj = 25C 0.1 10 0.1 1 10 100 0.1 1 VDS, Drain-to-Source Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 200 T J = 25C Gfs, Forward Transconductance (S) ID, Drain-to-Source Current ( A) 20s PULSE WIDTH Tj = 175C T J = 175C 100 10 VDS = 15V 20s PULSE WIDTH 1 T J = 175C 160 120 T J = 25C 80 40 VDS = 15V 20s PULSE WIDTH 0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 40 80 120 160 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com 3 http://store.iiic.cc/ IRF1404ZS_L 8000 VGS , Gate-to-Source Voltage (V) Coss = Cds + Cgd 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Ciss 4000 2000 Coss ID= 75A VDS= 32V VDS= 20V 16 12 8 4 Crss 0 0 1 10 0 100 40 80 120 160 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10000 1000.0 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 175C 100.0 10.0 T J = 25C 1.0 1000 100 100sec 10 VGS = 0V 0.1 0.2 0.6 1.0 1.4 1 0 1.8 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 1msec Tc = 25C Tj = 175C Single Pulse Fig 8. Maximum Safe Operating Area 4 www.irf.com http://store.iiic.cc/ IRF1404ZS_L 200 2.0 ID , Drain Current (A) 160 120 80 40 0 25 50 75 100 125 150 175 ID = 75A VGS = 10V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance LIMITED BY PACKAGE 1.0 0.5 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 T J , Junction Temperature (C) Fig 10. Normalized On-Resistance Vs. Temperature Fig 9. Maximum Drain Current Vs. Case Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 http://store.iiic.cc/ IRF1404ZS_L DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp EAS, Single Pulse Avalanche Energy (mJ) 600 15V ID TOP 500 BOTTOM 31A 53A 75A 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) QGS ID = 250A 3.0 2.0 1.0 -75 VGS -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 14. Threshold Voltage Vs. Temperature 6 www.irf.com http://store.iiic.cc/ IRF1404ZS_L 10000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax Duty Cycle = Single Pulse 1000 0.01 100 0.05 0.10 10 1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 75A 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 http://store.iiic.cc/ IRF1404ZS_L D.U.T Driver Gate Drive + + * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - - D= Period P.W. VDD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS VGS RG RD D.U.T. + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms 8 www.irf.com http://store.iiic.cc/ IRF1404ZS_L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) 1.15 (.045) MIN 1 2 LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN 3 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 3X 0.36 (.014) M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C For GB Production EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INTERNATIONAL RECT IFIER LOGO LOT CODE www.irf.com PART NUMBER DAT E CODE 9 http://store.iiic.cc/ IRF1404ZS_L D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L AS S EMBLY LOT CODE For GB Production T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN T HE AS S EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO LOT CODE 10 PART NUMBER F530S DAT E CODE www.irf.com http://store.iiic.cc/ IRF1404ZS_L TO-262 Package Outline Dimensions are shown in millimeters (inches) IGBT 1- GATE 2- COLLECTOR TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" INT ERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE www.irf.com PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C 11 http://store.iiic.cc/ IRF1404ZS_L D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.11mH This value determined from sample failure population. 100% RG = 25, IAS = 75A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . TO-220AB package is not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/03 12 www.irf.com http://store.iiic.cc/ Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ http://store.iiic.cc/