EMA3 / UMA3N / FMA3A
Transistors
Emitter common
(dual digital transistors)
EMA3 / UMA3N / FMA3A
!
!!
!Features
1) Two DTA143Ts in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
!
!!
!Structure
Epitaxial planar type PNP silicon transistor (Built-in
resistor type.)
The following characteristics apply to both DTr1 and
DTr2.
!
!!
!Equivalent circuit
EMA3 / UMA3N
R1=4.7kΩ
FMA3A
R
1
DTr
1
DTr
2
R
1
(3) (2) (1)
(4) (5)/(6)
R1=4.7kΩ
R
1
R
1
DTr
1
DTr
2
(3) (4) (5)
(2) (1)
!
!!
!External dimensions (Units : mm)
ROHM : EMT5
EMA3
Each lead has same dimensions
ROHM : UMT5
EIAJ : SC-88A
UMA3N
Each lead has same dimensions
0.9
0.15
0to0.1
0.1Min.
0.7
2.1
1.3
0.65
(4)
(1)
(6)
0.2
1.25
(2)
0.65
(3)
2.0
Abbreviated symbol : A3
Abbreviated symbol : A3
Abbreviated symbol : A3
Each lead has same dimensions
0to0.1
1.1
0.8
0.3to0.6
0.15
1.6
2.8
2.9
0.95
1.9
(4)
(5)
(1)
0.3
(3)
0.95
(2)
ROHM : SMT5
EIAJ : SC-74A
FMA3A
0.22
1.2
1.6
(1)
(2)
(3)
(5)
(4)
0.13
0.5
0.5
0.5
1.0
1.6
EMA3 / UMA3N / FMA3A
Transistors
!
!!
!Absolute maximum ratings (Ta = 25°C)
Parameter
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
−50 V
V
V
mA
∗
2
mW
∗
1
˚C
˚C
−50
−5
−100
300 (TOTAL)
150 (TOTAL)
150
−55∼+150
Symbol Limits Unit
EMA3, UMA3N
FMA3A
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
!
!!
!Electrical characteristics (Ta = 25°C)
Parameter Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE (sat)
R1
Min.
−50
−50
−5
−
100
−
3.29
−
−
−
−
250
−
4.7
−
−
−
−0.5
600
−0.3
6.11
VI
C=−50µA
IC=−1mA
IE=−50µA
VCB=−50V
VCE/IC=−5V/−1mA
IC/IB=−5mA/−0.25mA
−
V
V
µA
IEBO −−−0.5 VEB=−4VµA
−
V
kΩ
Typ. Max. Unit Conditions
fT−250 −VCE=−10mA, IE=5mA, f=100MHz
MHz
∗
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Input resistance
Emitter cutoff current
Transition frequency
∗
Transition frequency of the device
!
!!
!Packaging specifications
Package
Code TR T148
3000 3000
Taping
Basic ordering
unit (pieces)
UMA3N
T2R
8000
EMA3
FMA3A
Type
!
!!
!Electrical characteristic curves
V
CE
=−5V
−100µ −1m −10m
−200µ −2m −20m
−500µ −5m −50m −100m
1k
500
200
100
50
20
10
5
2
1
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C (A)
Fig.1 DC current gain vs. collector
current
−40˚C
25˚C
Ta=100˚C
l
C
/l
B
=20
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−1
−100µ−1m −10m
−200µ−2m −20m
−500µ−5m −50m−100m
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.2 Collector-emitter saturation
voltage vs. collector current
Ta=100˚C
25˚C
−40˚C
