SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES eSMP (R) Series * Very low profile - typical height of 1.0 mm Available * Ideal for automated placement * Low forward voltage drop, low power losses * High efficiency * Low thermal resistance * Meets MSL level 1 per J-STD-020, LF maximum peak of 260 C SMP (DO-220AA) Cathode * AEC-Q101 qualified Anode * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started Models For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Available MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SMP (DO-220AA) IF(AV) 2.0 A VRRM 20 V, 30 V, 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V TJ max. 150 C Package SMP (DO-220AA) Circuit configuration Single Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: matte tin plated J-STD-002 and JESD 22-B102 leads, solderable per M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Device marking code SS2P2 SS2P3 SS2P4 22 23 24 30 40 20 UNIT V Maximum repetitive peak reverse voltage VRRM Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 50 A Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 C EAS 11.25 mJ dV/dt 10 000 V/s TJ, TSTG -55 to +150 C Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 13-Aug-2018 Document Number: 88910 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage SYMBOL IF = 2 A TJ = 25 C IF = 2 A TJ = 125 C VF (1) TJ = 25 C Maximum reverse current at rated VR voltage IR (2) TJ = 125 C Typical junction capacitance 4.0 V, 1 MHz TYP. MAX. UNIT 0.50 0.55 0.43 0.50 - 150 A 8 15 mA V 110 CJ pF Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance SS2P2 SS2P3 RJA (1) 115 RJL (1) 15 (1) 20 RJC SS2P4 UNIT C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas R JL is measured at the terminal of cathode band. RJC is measured at the top center of the body ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS2P4-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel SS2P4-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel SS2P4HM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel SS2P4HM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 50 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 2.4 2.0 1.6 1.2 0.8 TL Measured at the Cathode Band Terminal 0.4 0 40 30 20 10 0 80 90 100 110 120 130 140 150 1 10 100 Lead Temperature (C) Number of Cycles at 50 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 13-Aug-2018 Document Number: 88910 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT T