SS2P4HM3/84A - Vishay Semiconductors

SS2P2, SS2P3, SS2P4

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Revision: 13-Aug-2018 1Document Number: 88910

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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High Current Density Surface Mount

Schottky Barrier Rectifier

DESIGN SUPPORT TOOLS

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1 per J-STD-020, LF maximum

peak of 260 °C

• AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling, DC/DC converters, and polarity protection

applications.

MECHANICAL DATA

Case: SMP (DO-220AA)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Base P/NHM3 - halogen-free, RoHS-compliant, and

automotive grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Polarity: color band denotes cathode end

PRIMARY CHARACTERISTICS

IF(AV) 2.0 A

VRRM 20 V, 30 V, 40 V

IFSM 50 A

EAS 11.25 mJ

VF0.50 V

TJ max. 150 °C

Package SMP (DO-220AA)

Circuit configuration Single

SMP (DO-220AA)

eSMP

Series

Cathode Anode

click logo to get started

Available

Models

Available

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SS2P2 SS2P3 SS2P4 UNIT

Device marking code 22 23 24

Maximum repetitive peak reverse voltage VRRM 20 30 40 V

Maximum average forward rectified current (fig. 1) IF(AV) 2.0 A

Peak forward surge current 10 ms single

half sine-wave superimposed on rated load IFSM 50 A

Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C EAS 11.25 mJ

Voltage rate of change (rated VR) dV/dt 10 000 V/μs

Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

SS2P2, SS2P3, SS2P4

www.vishay.com Vishay General Semiconductor

Revision: 13-Aug-2018 2Document Number: 88910

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

Note

(1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 6.0 mm x 6.0 mm copper pad areas RJL is measured

at the terminal of cathode band. RJC is measured at the top center of the body

Note

(1) Automotive grade

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT

Maximum instantaneous forward voltage IF = 2 A TJ = 25 °C VF (1) 0.50 0.55 V

IF = 2 A TJ = 125 °C 0.43 0.50

Maximum reverse current at rated VR voltage TJ = 25 °C IR (2) - 150 μA

TJ = 125 °C 8 15 mA

Typical junction capacitance 4.0 V, 1 MHz CJ 110 pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER SYMBOL SS2P2 SS2P3 SS2P4 UNIT

Typical thermal resistance

RJA (1) 115

°C/WRJL (1) 15

RJC (1) 20

ORDERING INFORMATION (Example)

PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE

SS2P4-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel

SS2P4-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel

SS2P4HM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel

SS2P4HM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel

2.4

80 90 100 110 120 130 140 150

1.6

2.0

0.4

0.8

1.2

Average Forward Rectified Current (A)

Lead Temperature (°C)

TL Measured

at the Cathode Band Terminal

110 100

Number of Cycles at 50 Hz

Peak Forward Surge Current (A)

SS2P2, SS2P3, SS2P4

www.vishay.com Vishay General Semiconductor

Revision: 13-Aug-2018 3Document Number: 88910

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1 0.3 0.5 0.7 0.9 1.1 1.3

0.1

100

Instantaneous Forward Voltage (V)

Instantaneous Forward Current (A)

= 150 °C

= 125 °C

= 25 °C

20 40 60 80 100

0.1

100

1000

10 30 50 70 90

100 000

10 000

= 150 °C

= 125 °C

= 25 °C

Percent of Rated Peak Reverse Voltage (%)

Instantaneous Reverse Leakage

Current (µA)

0.1 101 100

100

1000

Reverse Voltage (V)

Junction Capacitance (pF)

0.01 101 100

100

0.1

1000

t - Pulse Duration (s)

Transient Thermal Impedance (°C/W)

SMP (DO-220AA)

Cathode Band

0.086 (2.18)

0.074 (1.88)

0.142 (3.61)

0.126 (3.19)

0.158 (4.00)

0.146 (3.70)

0.013 (0.35)

0.004 (0.10)

0.012 (0.30)

0.000 (0.00)

0.018 (0.45)

0.006 (0.15)

0.045 (1.15)

0.033 (0.85)

0.036 (0.91)

0.024 (0.61)

0.032 (0.80)

0.016 (0.40)

0.103 (2.60)

0.087 (2.20)

0.053 (1.35)

0.041 (1.05)

0.012 (0.30) REF.

0.100

(2.54)

0.105

(2.67)

0.025

(0.635)

0.030

(0.762)

0.050

(1.27)

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