www.DataSheet.in SEMIKRON INC SEMIKRUN Absolute Maximum Ratings | Values | Symbol | Conditions 101D ...121D] Units - Vces 1000 1200 Voi Vcer Rae = 20 kQ 1000 1200 Vo IIc Tease = 25/80 C 50/34 A llc Tease = 25/80 C 100/68 A 'VGes #20 V - Piot per IGBT, Tease = 25 C 400 WwW Tj, Tsig 55.. +150 C i Visol AC, 1 min 2 500 V 1 humidity | DIN 40 040 Class F climate - DIN IEC 687.1 55/150/56 . Inverse Diode : le= Io 50 A l-M= Icom 100 A Characteristics Symbol | Conditions " min. typ. max. | Units | Vierjces | Vee=0,lco=1mA 2Vces - Vv | VGE(th) Vee = Vee, Io=4 mA i 4,5 5,5 6,5 Vv Ices Veg = 0 Ty= 25C i - 0,01 1 mA , Vce = Voces T=125C 6 = - 4 mA | Ices ' Vee = 20 V, Voce = 0 - - 100 nA Voesat 'VaE=15V i Tj= 25C - 3 3,5 Vv I=50A Tj= 150 C - 4 45 V Gis Vcr = 20 V, Ic =50A 17 24 _ S Cone per IGBT - - 400 pF | Ctes Vee =0 - 6 - nF Coes | VceE = 25 V - 480 - pF Cres f=1MHz - 200 - pF Loe - = 20 nH taron) Voc = 600 V - 80) - ns tr Vee = 15 V a 0? - ns tacotn Ic=50A + = 250 3/250 4) ns tr Reon =Reot=3,32 |} - 400%/1004 - ns: | Wortt2 ) Tj = 125C - 4 = | mWs ' Wottes ) | 15% - ; mWs , Inverse Diode ... 101 D ' 'Ve= Vec : Ir= 50 A,VGe=0;(Ti=125C)} - 1,8(1,6) 24 ; V tr | Tj= 25C 2) - - ns, | T= 125 C 7) - 20 - j ons , | Qe ! Tj = 25/125 C 7) - 2/9 - ommn ifs ifs=tr/ (tre th) - 13) - | Inverse Diode ... 121 D iVe= Veo | Irs 50 A,Vee = 0; (Ti=125C)} - 2,4(1,9) 2,9 V tr Tj= 25C% - - - ns Tj = 125 C?) - 2280 - ns Qn Tj = 25/125 c 2) - 2510 - yc fs fs=te/ (trte) - 13) - Thermal Characteristics Rihje per IGBT - - 0,31 CW Rinjc per diode io - 0,9 C/W | Riheh per module a - 0,05 C Cases and mechanical data see page B 6 102 1) Tease = 25 C, unless otherwise specified 2) Ip = Ic, Vr = 600 V, dig/dt = 800 Als, Ver = 0 5) resistive load 4) inductive load SEMITRANS M IGBT Modules SKM 50GB 101D_ , SKM 50 GAL 101 D ) SKM50GB121D SKM 50 GAL 121 D 2 SKM 50 GAR 121 D ) T-SA-3I GB GAL GAR Features e MOS input (voltage controlled) e Nchannel e Low saturation voltage e Very low tail current e Low temperature sensitivity e Breakdown proof e High short circuit capability No latch-up Fast inverse diodes * isolated copper baseplate e Large clearances and creepage distances e UL recognized, file no. E 63 532 Typical Applications Switched mode power supplies DC servo and robot drives Self-commutated inverters DC choppers AC motor speed control Inductive heating Uninterruptible power supplies General power switching applications e Electronic welders e Pulse frequencies above 15 kHz 5) see fig. 21; Raott = 6,3 Q ) The free-wheeling diodes of the GAL and GAR types have the data of the inverse diodes of SKM 75 ... by SEMIKRON B6-95www.DataSheet.in SEMIKRON INC 1-39-31 Won se= | io: Vos: at 1 3, Wor 2s | ic: Veg: at YGE Var 0 ic ton toft Io : 0.9-Ig i ae be ' 1 ! ! I I lot te Hp eee Ome pe a b~}--o oA 'g Ofte. : 11 | t ily toot td(on) tr taort) tf Fig. 21 Switching times and turn-off energies 500 4-SKM 50 GB ... D Ww 400 _ 300 200 100 tot 0 I. 0 Toase 50 100 C 150 Fig. 22 Rated power dissipation vs. temperature 15 7 a 1 mJ 3SKM 50 GB .. D Voce: 600V Vaz + 18 Tz 25C 40 HT ns 126C Wott 0 o 0 Ig 10 20 30 40 Fig. 24 Turn-off energy dissipation per pulse B6-96 8 Pr A-SKM 50 GB ... D Voce 690V Vez = 18V 2 25C me Ts 1259C | se mJ 10 % lg 10 20 30 40 50 A 60 Fig. 23 Turn-on energy dissipation per pulse 103 A-SKM 50 GB ... D 102 101 109 'e 101 Voge 10! 102 v 104 Fig. 25 Maximum safe operating area by SEMIKRONwww.DataSheet.in SEMIKRON INC SEMIKRON 1-39-31 - 76 1 1, 3'SKM 50 GB ... D ,| 3'SKM 50 GB ... D Voce: 600V ! Vag = 15V 50 25 Reon = 27 2 Reorrt 13 9 i |01 ClTep = 50% le Tease= 70C yj s 159C 0 0 Vor 560 4000 Vv 1500 o f 10 20 30 4g kHz 50 Fig. 26 Turn-off safe operating area Fig. 27 Rated current vs. pulse frequency 60 660 1 a. AL1 A 5 SKM 50 GB... D 3 SKM 50 GB ... D- 50 590 tp = 16ps \ Voce? 600V V2 IBV Ty = 25C 40 Ge 400 Tj = 126C 30 300 20 10 Ig Go 6 0 Tease 50 199 c 150 10 Vge 12 14 16 18 Y 20 Fig. 28 Rated current vs. temperature Fig. 29 Short-circuit current vs. turn-on gate voltage 100 30 A 5 $-SkM 50 GB ... D = 20V 40 3 SKM 50 GB... D 60 20 40 40 Pig zd OW. 20 Ig Ofs oO Oo 0 Ve 10 15 Vv 20 0 Ig 25 50 A 76 Fig. 30 Output characteristic Fig. 31 Forward transconductance by SEMIKRON B6-97www.DataSheet.in ~ SEMIKRON INC 7-39-31 4-SKM 50 GB ... D Vor= 20V 0 \e 38 40 6% Vv 20 Fig. 32 Transfer characteristic 3 KA +-SKM 50 GB ... D us dig a 0 - QO Reg 10 20 30 Q 40 Fig. 34 Rate of rise of collector current 101 nF SKM 50 GB... D 1072 0 Voz 10 20 30 vO 40 Fig. 36 Capacitances vs. collector-emitter voltage B6-98 18 T= 25C v[$:SKM 60 GB... D fi! feoro lez 25 Vor oF Vee 10 18 Vv 20 Fig. 33 Saturation characteristics 20 CTT v--SKM 50 GB... D 16 10 0 GO Qe 100 200 3600 nG 400 Fig. 35 Gate charge characteristic 10 1, : ysttp' SKM 50 GB w D 0.1 001 taoft 4 ool L. LL 0 Rg 10 20 30 40 9 50 Fig. 37 Switching times vs. gate resistor ~~ by SEMIKRONSEMTKRON INC www.DataSheet.in SEMIKRUN 190 5-SKM 50 GB 101 D 86 T= 2c TTT, -128C " 49 20 ip 0 Ove 08 1 15 2 Vo 265 Fig. 38 a Diode forward characteristic i 2 SKM 50 GB 101 D- 50 0 c p 22 Ipz 8 40 30 6 Voge: 6004 = 18Y Qn a 0 -die/dt 500 1000 1500 A/us 2000 Fig. 39 a Diode recovered charge 190 A J = 26C Voce: 600V WF 8c Vag = 15V 89 ~ 60 40 20 tam 4-SKM 50 GB 101 D Oo Ip 10 20 30 40 50 A 69 Fig. 40 a Diode peak reverse recovery current (IF) eee 1-39-31 ~ SKM 50 GB 121 D TZ = 26C 77, =126C zs 1 2 J 0 0 ve 1 2 3 vo4 Fig. 38 b Diode forward characteristic A-SKM 50 GB 121 D 13 59 0 pe 29 lee 4 37 5 1 6 |. Voges 606% - = 15 4 I ' 2 Qn T= 25C 5 7 -128C * 0 y 250 -dig/dt 500 780 1000 A/us 1250 Fig. 39 b Diode recovered charge 16 A yt = 26C ene y =126C Voces 690V Vee = 15 50 ~. 25 nM -SKM 50 GB 121 D 0 i 10 20 36 49 A 50 Fig. 40 b Diode peak reverse recovery current (Ie) by SEMIKRON B6-99www.DataSheet.in ~SEMIKRON INC 100 ert o 4-SKM 50 GB 101 D Ip = SOA Voce: 600V V@g = 15 80 Ts 26C = 7, 126C 60 40 26 100 va Q 0 0 -die/dt 500 1000 Fig. 41 a Diode peak reverse recovery current (-dig/dt) Tam 1500 A/ys 2000 3 md 4-SKM 50 GB 101 D Voce + 800Vv Vee = 18V T = 25C 2 mm Ty 21286 0 Jp 10 20 30 40 A 5&0 Fig. 42 a Diode turn-off energy dissipation per pulse T~-39931 75 -S-SKM 60 GB 121 D Ig = 5OA Voce: 600V Veg = 15 J,: 28 50 Fane t 21286 as tam 9 250 -dip7dt 500 750 1000 A/ps 1250 Fig. 41 b Diode peak reverse recovery current (-dir/dt) 25 C4-SKM 50 GB 101 D 2 Voce: 600V gp # 15 Te 28C me 128C 05 Wort 0 O lg 10 20 30 40 A 50 Fig. 42 b Diode turn-off energy dissipation per pulse B 6-100 by SEMIKRONwww.DataSheet.in SEMIKRON INC SEMIKRON OS T-39-31 3'SKM 50 GB ... D aids 0.4 0.3 G2 Of Zrnie 0 t 10-2 107 709 5s io! Fig. 51 Transient thermal impedance 109 I \ 73 'SKM 50 GB ... D 4.4 Ritnjolp De Pst: f 10 3 to-6 tp 1674 103 1071 109 s tot Fig. 52 Thermal impedance under pulse conditions by SEMIKRON B6-101www.DataSheet.in SEMIKRON INC SKM 50 GB 101 D SKM 50 GB 121 D Case D 27 2.8x0.5 Ei 10-4 2 3 C2 E2 C1 E1 fe 5 oi" Dimensions inmm : | SKM 50 GAL 101 D | SKM 50 GAL 121 D SKM 50 GAR 121 D Case D 33 G2. Case D 34 * 7 : a it 2 a * 1 A E1 4 2 3 5 C2 E2 K4 4 | | i j : This is an electrostatic discharge Mechanical Data | sensitive device (ESDS). Please Symbol |Conditions Values Units | observe the International standard min. typ. max. IEC 7471, Chapter IX, Mi to heatsink, Si Units 1 3 - 6 Nm } to heatsink, US Units 1 27 - 53 lb.in. Me for terminals, S$! Units 2,5 - 5 Nm ; for terminals US Units i 92 - 44 | Ib.in. | a _ - Bx9,81| mis? | Ww - - 280 | g | *The free-wheeling diode has the data of the inverse diode of SKM 75... B6-102 by SEMIKRON .