MBR3050PT thru MBR3060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR3050PT MBR3060PT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 1.5 2.49 0.087 0.102 200 A 10000 V/us @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.75 0.65 0.80 0.75 V @TJ=25oC @TJ=125oC 5 100 mA Voltage Rate Of Change (Rated VR) IR 19.81 20.32 20.80 21.46 A Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) VF A B 30 @TC=125oC IFSM Maximum Forward Voltage (Note 1) Typical Thermal Resistance (Note 2) 1.4 CJ Typical Junction Capacitance Per Element (Note 3) 500 TJ Operating Temperature Range ROJC TSTG Inches Min. Max. Unit Maximum Average Forward Rectified Current IF=20A IF=20A IF=30A IF=30A Millimeter Min. Max. Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * Case: TO-3P molded plastic * Polarity: As marked on the body * Weight: 0.2 ounces, 5.6 grams * Mounting position: Any C C MBR3050PT thru MBR3060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers