QRB1134_NL - Fairchild Semiconductor

0.210 (5.33)

0.420 (10.67)

0.328 (8.33)

0.373 (9.47) 0.703 (17.86)

0.150 (3.81)

MIN

0.603 (15.32)

0.226 (5.74)

0.150 (3.81)

NOM

FUNCTION

(E) EMITTER

(K) CATHODE

(A)

(K)

(E)

(C)

REFLECTIVE

SURFACE

0.020 (0.51)

0.300 (7.62)

(A) ANODE

WHITE

BLUE

ORANGE

WIRE COLOR

GREEN

24.0 (609.60)

MIN #26 AWG

PACKAGE DIMENSIONS

FEATURES

• Phototransistor output

• High Sensitivity

• Low cost plastic housing

• #26 AWG, 24 inch PVC wire termination

• Infrared transparent plastic covers for dust protection

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

AK CE

SCHEMATIC

 2001 Fairchild Semiconductor Corporation

DS300351 7/02/01 1 OF 4 www.fairchildsemi.com

DESCRIPTION

The QRB1133/1134 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-

ing optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective

object passes within its field of view. The area of the optimum response approximates a circle .200” in diameter.

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133 QRB1134

ELECTRICAL / OPTICAL CHARACTERISTICS (TA= 25°C)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

EMITTER IF= 40 mA VF— — 1.7 V

Forward Voltage

Reverse Current VR= 2.0 V IR— — 100 µA

Peak Emission Wavelength IF= 20 mA !PE — 940 — nm

SENSOR IC= 1 mA BVCEO 30 — — V

Collector-Emitter Breakdown Voltage

Emitter-Collector Breakdown Voltage IE= 0.1 mA BVECO 5——V

Collector-Emitter Dark Current VCE = 10 V, IF= 0 mA ICEO — — 100 nA

COUPLED

On-state Collector Current IF= 40 mA, VCE = 5 V IC(ON) mA

QRB1133 D = .150”(5,6) 0.20 — —

QRB1134 0.60 —

Collector-Emitter IF= 20 mA, IC= 0.5 mA VCE (SAT) — — 0.4 V

Saturation Voltage

Rise Time VCE = 5 V, RL = 100 "tr—8—

µs

Fall Time IC(ON) = 5 mA tf—8—

Cross Talk IF= 40 mA, VCE = 5 V(7) ICX — — 1.00 µA

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Parameter Symbol Rating Units

Operating Temperature TOPR -40 to +85 °C

Storage Temperature TSTG -40 to +85 °C

Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec °C

Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec °C

EMITTER

Continuous Forward Current IF50 mA

Reverse Voltage VR5V

Power Dissipation(1) PD100 mW

SENSOR

Collector-Emitter Voltage VCEO 30 V

Emitter-Collector Voltage VECO 50 V

Collector Current IC20 mA

Power Dissipation(1) PD100 mW

ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise specified)

NOTES

1. Derate power dissipation linearly 1.67 mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16” (1.6mm) minimum from housing.

5. D is the distance from the assembly face to the reflective surface.

6. Measured using an Eastman Kodak neutral test card with 90% diffused reflecting surface.

7. Cross talk is the photo current measured with current to the input diode and no reflecting surface.

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133 QRB1134

1.60 10.0

1.00

0.8

0.6

0.4

0.2

0.10

0.01

.001

102

101

1.0

10-1

10-2

10-3

1.40

1.20

1.00

0.80

0.60

0.40

0.20

0.1 0.0 -50 -25 0 25 50 7510 20 30 40 501.0 10 100

Fig. 1 Forward Voltage

vs. Forward Current Fig. 2 Normalized Collector Current

vs. Forward Current Fig. 3 Normalized Collector Current

vs. Temperature

Fig. 5 Normalized Collector Current

vs. Distance

IF - FORWARD CURRENT (mA) IF - FORWARD CURRENT (mA) TA - AMBIENT TEMPERATURE (˚C)

DISTANCE IN MILS

Fig. 4 Normalized Collector Dark

Current vs. Temperature

TA - AMBIENT TEMPERATURE (˚C)

VF - FORWARD VOLTAGE (V)ICEO - COLLECTOR DARK CURRENT

IC - COLLECTOR CURRENT (mA)

VCE = 5 V

D = .05" IF = 10 m,A

VCE = 5 V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

050

50 -25 0 25 50 75 100

NORMALIZED COLLECTOR CURRENT (mA)

IF = 20 m,A

VCE = 5 V

100 150 200 250 300 350 400 450 500

VCE = 10 V

DS300351 7/02/01 3 OF 4 www.fairchildsemi.com

TYPICAL PERFORMANCE CURVES

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133 QRB1134

www.fairchildsemi.com 4 OF 4 7/02/01 DS300351

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO

ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME

ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF

OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD

SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical

implant into the body,or (b) support or sustain life,

and (c) whose failure to perform when properly

used in accordance with instructions for use provided

in labeling, can be reasonably expected to result in a

significant injury of the user.

2. A critical component in any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PHOTOTRANSISTOR

REFLECTIVE OBJECT SENSORS

QRB1133 QRB1134