NPN SILICON POWER Transistor NPN SILICON POWER Transistor FHD882 DESCRIPTION & FEATURES Low saturation voltage VCE(sat0 <0.5V(@IC = 2A,IB = 0.2A) Excellent HFE linearity and high HFE HFE:60 to 400(VCE=2V, IC=1A) SOT-89 PIN ASSIGNMENT PIN NAME FUNCTION PIN NUMBER SOT-89 B 1 BASE C 2 COLLECTOR E 3 EMITTER MAXIMUM RATINGS(Ta=25) CHARACTERISTIC Symbol Rating Unit Collector-Emitter Voltage - 30 Vdc VCEO Collector-Base Voltage - VCBO 40 Vdc Emitter-Base Voltage - 5.0 Vdc VEBO Collector Current(DC)- 3.0 Adc IC(DC) Collector Current(Pulse)- 7.0 Adc IC(pulse) Total Power Dissipation (Ta=25) Ptot 1.0 W 150 TJ Junction and Storage Temperature Tstg -55 ~150 DEVICE MARKING FHD882R=DR(60~120),FHD882Q=DQ(100~200),FHD882P=DP(160~320),FHD882E=DE(200~400) ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted 25) Symbol Test Condition Min Type Max Unit Characteristic Collector-Emitter Breakdown Voltage - V(BR)CEO IC=10mA, 30 -- -- V Collector-Base Breakdown Voltage - V(BR)CBO IC=100A 40 -- -- V Emitter-Base Breakdown Voltage - V(BR)EBO IE=100A 5.0 -- -- V Collector Cutoff Current ICBO VCB=30VIE=0 -- -- 1.0 uA Emitter Cutoff Current IEBO VEB=3.0V, IC=0 -- -- 1.0 uA DC Current Gain hFE VCE=2V, IC=20mA VCE=2.0V, IC=1.0A 30 60 150 160 -- 400 -- -- VCEsat IC=2.0A,IB=0.2A -- 0.3 0.5 V Base-Emitter Saturation Voltage - VBEsat IC=2.0A,IB=0.2A -- 1.0 2.0 V Transition Frequency fT VCE=5.0V,IE=0.1A, -- 90 -- MHZ Collect Output Capacitance COb VCB=10V,IE=0,f=1.0MHZ -- 45 -- pF Collector-Emitter Saturation Voltage - 1