IR43x2
9 www.irf.com © 2013 International Rectifier Apr 3, 2013
Electrical Characteristics (cont’d)
VCC,VBS= 12 V, VSS=VS1=VS2=VN1=VN2=COM=0V, VAA=9.6V and TA=25C unless otherwise specified.
Symbol
Definition
Min
Typ
Max
Units
est Conditions
Audio Input (VGND=0, VAA=4.8V, VSS=-4.8V)
VOSn Input offset voltage, n=1-2 -18 0 18 mV
IBINn Input bias current, n=1-2 - - 40 nA
GBWn Small signal bandwidth in
OTA, n=1-2 - 9 - MHz
CCOMP=1nF,
Rf=0
gmn OTA transconductance, n=1-2 - 10 - mS VIN+=0V, VIN-
=10mV
GVn OTA gain, n=1-2 50 - - dB
PWM
VthPWM PWM comparator threshold in
COMP - (VAA -
VSS)/2 - V
fOTAn COMP pin star-up local
oscillation frequency, n=1-2 0.7 1.0 1.5 MHz VCSD =GND
Ton_n COMP to VS rising edge
propagation delay, n=1-2 - 370 - ns
Toff_n COMP to VS trailing edge
propagation delay, n=1-2 - 320 - ns
DTn
Deadtime: Low-side turn-off to
High-side turn-on (DTLO-HO) &
High-side turn-off to Low-side
turn-on (DTHO-LO) , n=1-2
- 50 - ns
VP=30V,
VN=-30V,
Power MOSFET (FET1, FET2, FET3, FET4) (IR4302)
V(BR)DSS Drain-to-Source breakdown
voltage 80 - - V
VGS=0V,
ID=250uA
RDS(ON) FET on resistance - 39 50 mΩ VGS=10V,
ID=3.3A
Qg Total gate charge - 7.3 - nC
ILK0 VP leakage current, VS=VN - - 20 µA
ILK1 VP leakage current, VS=VP - - 50 µA
VP=80V, VCSD
=VSS
Power MOSFET (FET1, FET2, FET3, FET4) (IR4322)
V(BR)DSS Drain-to-Source breakdown
voltage 60 - - V
VGS=0V,
ID=250uA
RDS(ON) FET on resistance - 30 40 mΩ VGS=10V,
ID=3.3A
Qg Total gate charge - 8.3 - nC
ILK0 VP leakage current, VS=VN - - 20 µA
ILK1 VP leakage current, VS=VP - - 50 µA
VP=60V, VCSD
=VSS
Power MOSFET (FET1, FET2, FET3, FET4) (IR4312)
V(BR)DSS Drain-to-Source breakdown
voltage 40 - - V
VGS=0V,
ID=250uA
RDS(ON) FET on resistance - 44 56 mΩ I
D=3.6A
Qg Total gate charge - 4.5 - nC VGS=10V
ILK0 VP leakage current, VS=VN - - 20 µA VP=40V, VCSD
=VSS
ILK1 VP leakage current, VS=VP - - 50 µA