Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 4
1Publication Order Number:
MMBT6427LT1/D
MMBT6427LT1G,
SMMBT6427LT1G
Darlington Transistor
NPN Silicon
Features
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 40 Vdc
Emitter−Base Voltage VEBO 12 Vdc
Collector Current − Continuous IC500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) TA = 25C
Derate above 25C
PD225
1.8
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 556 C/W
Total Device Dissipation Alumina Substrate,
(Note 2) TA = 25C
Derate above 25C
PD300
2.4
mW
mW/C
Thermal Resistance, Junction−to−Ambient RqJA 417 C/W
Junction and Storage Temperature TJ, Tstg −55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SOT−23 (TO−236)
CASE 318
STYLE 6
Device Package Shipping†
ORDERING INFORMATION
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MMBT6427LT1G SOT−23
(Pb−Free)
3,000 Tape & Reel
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1V M G
G
1V = Device Code
M = Date Code*
G= Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
COLLECTOR 3
BASE
1
EMITTER 2
SMMBT6427LT1G SOT−23
(Pb−Free)
3,000 Tape & Reel
MMBT6427LT1G, SMMBT6427LT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
V(BR)CEO 40 −
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO 40 −
Vdc
Emitter−Base Breakdown Voltage
(IC = 10 mAdc, IC = 0)
V(BR)EBO 12 −
Vdc
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
ICES −1.0
mAdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0)
ICBO −50
nAdc
Emitter Cutoff Current
(VEB = 10 Vdc, IC = 0)
IEBO −50
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 100 mAdc, VCE = 5.0 Vdc)
(IC = 500 mAdc, VCE = 5.0 Vdc)
hFE 10,000
20,000
14,000
100,000
200,000
140,000
−
Collector−Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc)
VCE(sat)(3)
−
−
1.2
1.5
Vdc
Base−Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat) −2.0
Vdc
Base−Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
VBE(on) −1.75
Vdc
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo −7.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo −15
pF
CurrentGain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
|hfe|
1.3 −
Vdc
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
NF
−10
dB
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.
RSin
enIDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
MMBT6427LT1G, SMMBT6427LT1G
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3
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)
Figure 2. Noise Voltage
f, FREQUENCY (Hz)
50
100
200
500
20
Figure 3. Noise Current
f, FREQUENCY (Hz)
Figure 4. Total Wideband Noise Voltage
RS, SOURCE RESISTANCE (kW)
Figure 5. Wideband Noise Figure
RS, SOURCE RESISTANCE (kW)
5.0
50
70
100
200
30
10
20
1.0
10
10
20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
BANDWIDTH = 1.0 Hz
RS 0
IC = 1.0 mA
100 mA
10 mA
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 mA
10 mA
en, NOISE VOLTAGE (nV)
in, NOISE CURRENT (pA)
2.0 5.0 10 20 50 100 200 500 1000
BANDWIDTH = 10 Hz TO 15.7 kHz
IC = 10 mA
100 mA
1.0 mA
8.0
10
12
14
6.0
0
4.0
1.0 2.0 5.0 10 20 50 100 200 500 1000
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
IC = 1.0 mA
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
NF, NOISE FIGURE (dB)
10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
MMBT6427LT1G, SMMBT6427LT1G
http://onsemi.com
4
SMALL−SIGNAL CHARACTERISTICS
Figure 6. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
2.0
200k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
TJ = 25C
C, CAPACITANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|hfe|, SMALL-SIGNAL CURRENT GAIN
hFE, DC CURRENT GAIN
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
Cibo
Cobo
0.5 1.0 2.0 0.5 10 20 50 100 200 500
VCE = 5.0 V
f = 100 MHz
TJ = 25C
100k
70k
50k
30k
20k
10k
7.0k
5.0k
3.0k
2.0k 7.0 10 20 30 50 70 100 200 300 500
TJ = 125C
25C
-55C
VCE = 5.0 V
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
TJ = 25C
IC = 10 mA 50 mA 250 mA 500 mA
Figure 10. “On” Voltages
IC, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V, VOLTAGE (VOLTS)
1.4
1.2
1.0
0.8
0.6 7.0 10 20 30 50 70 100 200 300 500
VBE(sat) @ IC/IB = 1000
RV, TEMPERATURE COEFFICIENTS (mV/ C)
TJ = 25C
VBE(on) @ VCE = 5.0 V
VCE(sat) @ IC/IB = 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10 20 30 50 70 100 200 300 500
25C TO 125C
-55C TO 25C
*RqVC FOR VCE(sat)
qVB FOR VBE
25C TO 125C
-55C TO 25C
*APPLIES FOR IC/IB hFE/3.0
MMBT6427LT1G, SMMBT6427LT1G
http://onsemi.com
5
Figure 12. Thermal Response
t, TIME (ms)
1.0
r(t), TRAN
S
IENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
ZqJC(t) = r(t) RqJCTJ(pk) - TC = P(pk) ZqJC(t)
ZqJA(t) = r(t) RqJATJ(pk) - TA = P(pk) ZqJA(t)
Design Note: Use of Transient Thermal Resistance Data
FIGURE A
tP
PPPP
t1
1/f
DUTYCYCLE +t1f +t1
tP
PEAK PULSE POWER = PP
MMBT6427LT1G, SMMBT6427LT1G
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6
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
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MMBT6427LT1/D
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