Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 135
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 96A
IDM Pulsed Drain Current 700
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy380 mJ
EAS (6 sigma) Single Pulse Avalanche Energy Tested Value1220
IAR Avalanche CurrentSee Fig.12a, 12b, 15, 16 A
EAR Repetitive Avalanche EnergymJ
dv/dt Peak Diode Recovery dv/dt 2.0 V/ns
TJOperating Junction and -55 to + 175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
HEXFET® Power MOSFET
Absolute Maximum Ratings
VDSS = 55V
RDS(on) = 4.7mΩ
ID = 135A
07/22/10
www.irf.com 1
HEXFET(R) is a registered trademark of International Rectifier.
Description
This HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of this
product are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche
rating . These features combine to make this design
an extremely efficient and reliable device for use in a
wide variety of applications.
S
D
G
Typical Applications
lIndustrial Motor Drive
IRF2805SPbF
IRF2805LPbF
D2Pak
IRF2805SPbF
TO-262
IRF2805LPbF
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθJA Junction-to-Ambient(PCB Mounted, steady state)** ––– 40 °C/W
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free
PD - 95944A
IRF2805S/LPbF
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.06 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 3.9 4.7 mΩVGS = 10V, ID = 104A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = 10V, ID = 250µA
gfs Forward Transconductance 91 ––– ––– S VDS = 25V, ID = 104A
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 200 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -20V
QgTotal Gate Charge ––– 150 230 ID = 104A
Qgs Gate-to-Source Charge ––– 38 57 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– 52 78 VGS = 10V
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
trRise Time ––– 120 ––– ID = 104A
td(off) Turn-Off Delay Time ––– 68 ––– RG = 2.5Ω
tfFall Time ––– 110 ––– VGS = 10V
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 5110 ––– VGS = 0V
Coss Output Capacitance ––– 1190 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 210 ––– ƒ = 1.0MHz, See Fig. 5
Coss Output Capacitance ––– 6470 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 860 ––– VGS = 0V, VDS = 44V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 1600 ––– VGS = 0V, VDS = 0V to 44V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 104A. (See Figure 12).
ISD ≤ 104A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 104A, VGS = 0V
trr Reverse Recovery Time ––– 80 120 ns TJ = 25°C, IF = 104A
Qrr Reverse Recovery Charge ––– 290 430 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
175
700
A
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
IRF2805S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
175A
4. 0 5.0 6. 0 7.0 8.0 9.0 10. 0
VGS , Gate-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (
A)
TJ = 25°C
TJ = 175°C
VDS = 25V
20µs PULSE WIDTH
0.1 110 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 110 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
ID, Drain-to-Source Current (A)
4.5V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
IRF2805S/LPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
ISD, Reverse Drain Current (A)
TJ = 25°C
TJ = 175°C
VGS = 0V
1 10 100 1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
10000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
110 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
C, Capacitance (pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C gs + C gd , C ds
SHORTED
Crss = C
gd
Coss = C
ds + C
gd
0 40 80 120 160 200 240
QG Total Gate Charge (nC)
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
VDS= 44V
VDS= 28V
ID= 104A
IRF2805S/LPbF
www.irf.com 5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
LIMITED BY PACKAGE
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRF2805S/LPbF
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 14. Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
VGS
-75 -50 -25 025 50 75 100 125 150 175
TJ , Temperature ( °C )
1.0
2.0
3.0
4.0
-VGS(th) Gate threshold Voltage (V)
ID = 250µA
25 50 75 100 125 150 175
0
200
400
600
800
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
42.5A
73.5A
104A
IRF2805S/LPbF
www.irf.com 7
Fig 15. Typical Avalanche Current Vs.Pulsewidth
Fig 16. Maximum Avalanche Energy
Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
0
100
200
300
400
EAR , Avalanche Energy (mJ)
TOP Single Pulse
BOTTOM 10% Duty Cycle
ID = 104A
1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
1000
10000
Avalanche Current (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
IRF2805S/LPbF
8www.irf.com
Peak Diode Recovery dv/dt Test Circuit
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
RG
VDD
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T*Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
* Reverse Polarity of D.U.T for P-Channel
VGS
[ ]
[ ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
[ ] ***
Fig 17. For N-channel HEXFET® power MOSFETs
IRF2805S/LPbF
www.irf.com 9
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
DAT E CODE
YEAR 0 = 2000
WE E K 02
A = AS S E MB L Y S I T E CODE
RECTIF IER
INTERNAT IONAL PART NUMBER
P = DE S I GNAT E S L E AD - F R E E
PRODUCT (OPTIONAL)
F530S
IN THE ASSEMBLY LINE "L"
ASSE MBLED ON WW 02, 2000
T HIS IS AN IRF 530S WIT H
LOT CODE 8024 INTERNATIONAL
LOGO
RECTIF IER
LOT CODE
AS S E MB L Y YEAR 0 = 2000
PART NUMBER
DAT E CODE
LINE L
WE E K 02
OR
F530S
LOGO
AS S E MB L Y
LOT CODE
IRF2805S/LPbF
10 www.irf.com
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
LOGO
RECT IFIER
INT ER NAT IONAL
LOT CODE
AS S E MB L Y
LOGO
RECT IFIER
INTERNATIONAL
DAT E CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
A = ASSEMBLY SITE CODE
OR
PRODUCT (OPTIONAL)
P = D E S I GNAT E S L E AD- F R E E
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
AS S E MB L Y
PART NUMBER
DATE CODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
AS SEMBLED ON WW 19, 1997
IN THE AS SEMBLY LINE "C"
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IRF2805S/LPbF
www.irf.com 11
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2010
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
