PNP SILICON TRANSISTOR 2SA1153 NEC ELECTRON DEVICE DESCRIPTION The 2SA1153 is designed for general Purpose amplifier and high speed switching applications. PACKAGE DIMENSIONS in millimeters (inches) FEATURES @ High Frequency Current Gain. (0308 Max) @ High Speed Switching. @ Small Output Capacitance. Low Collector Saturation Voltage. Ts 3 @ Complementary to the NEC 28C2720 NPN transistor. = 2 wa Ss ABSOLUTE MAXIMUM RATINGS (T, = 25 C) lit cay i Maximum Temperatures Th. = 25 Storage Temperature............. 55 to +150 C (| x z a3 Junction Temperature ........... 150 C Maximum ee) : g Maximum Power Dissipation (Tg = 25 C) (oa) ns _ Total Power Dissipation............. 600 mW | x 2 Maximum Voltages and Current (Tg = 25 c) 1203 5 8 Veso Collector to Base Voltage. ...... -60 V is VcEo Collector to Emitter Voltage... . . -40 V 1. EMITTER EIAJ : $C-43B Veso Emitter to Base Voltage........ -60 Vv 2 COLLECTOR ieee : nee? lo Collector Current (DC) ........ 500 mA ELECTRICAL CHARACTERISTICS (T, = 25 C) | SYMBOL CHARACTERISTIC MIN. TYP. MAX. UNIT TEST CONDITIONS i ton Turn-on Time 35 ns See Test Circuit. | toff Turn off Time 255 ns See Test Circuit. + tetg Storage Time 225 ns See Test Circuit. fr Gain Bandwidth Product 150 400 MHz Vce =-10V, ie =20mA | Cob Output Capacitance 5.0 8.0 pF Vcp=10V, lp =0, f = 1 MHz | heed DC Current Gain 50 140 300 - Vee = 2.0 V, Ic = 150 mA | begs OC Current Gain 20 50 - VceE = 2.0 V, Ic = 500 mA | VoE(sat)* Collector Saturation Voltage 0.45 ~0.75 Vv ig = 500 mA, Ig = 50mA | VBE(sat)* Base Saturation Voltage 1.0 -1.3 v Ic = 500 mA, Ip = Ne mA | tcBo Collector Cutoff Current -0.1 uA Vcp=40V, Ig =0 | lEBO Emitter Cutoff Current 0.1 BA Vep=4.0V,Ic=0 Pulsed PW = 350 us, Duty Cycle = 2%