Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2 1Publication Order Number:
BCP53T1/D
BCP53T1 Series
Preferred Devices
PNP Silicon
Epitaxial Transistors
This PNP Silicon Epitaxial transistor is designed for use in audio
amplifier applications. The device is housed in the SOT-223 package
which is designed for medium power surface mount applications.
•High Current: 1.5 Amps
•NPN Complement is BCP56
•The SOT-223 Package can be soldered using wave or reflow. The
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
•Available in 12 mm Tape and Reel
Use BCP53T1 to order the 7 inch/1000 unit reel.
Use BCP53T3 to order the 13 inch/4000 unit reel.
•Device Marking:
BCP53T1 = AH
BCP53–10T1 = AH–10
BCP53–16T1 = AH–16
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO –80 Vdc
Collector-Base Voltage VCBO –100 Vdc
Emitter-Base Voltage VEBO –5.0 Vdc
Collector Current IC1.5 Adc
Total Power Dissipation
@ TA = 25°C (Note 1.)
Derate above 25°C
PD1.5
12 Watts
mW/°C
Operating and Storage
Temperature Range TJ, Tstg –65 to
+150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction to Ambient
(surface mounted)
RθJA 83.3 °C/W
Lead Temperature for Soldering,
0.0625″ from case
Time in Solder Bath
TL260
10 °C
Sec
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in.
x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Device Package Shipping
ORDERING INFORMATION
BCP53T1 SOT–223
http://onsemi.com
SOT–223
CASE 318E
STYLE 1
1000/Tape & Reel
MEDIUM POWER
HIGH CURRENT
SURFACE MOUNT
PNP TRANSISTORS
123
4
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR 2,4
BASE
1
EMITTER 3
BCP53T3 SOT–223 4000/Tape & Reel
BCP53–10T1 SOT–223 1000/Tape & Reel
AHxxx
AHxxx = Device Code
xxx = –10 or –16
MARKING DIAGRAM
BCP53–10T3 SOT–223 4000/Tape & Reel
BCP53–16T1 SOT–223 1000/Tape & Reel
BCP53–16T3 SOT–223 4000/Tape & Reel
BCP53T1 Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO –100 – – Vdc
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –80 – – Vdc
Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm) V(BR)CER –100 – – Vdc
Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 – – Vdc
Collector-Base Cutoff Current (V CB = –30 Vdc, IE = 0) ICBO – – –100 nAdc
Emitter-Base Cutoff Current (VEB = –5.0 Vdc, IC = 0) IEBO – – –10 µAdc
ON CHARACTERISTICS
DC Current Gain (IC = –5.0 mAdc, VCE = –2.0 Vdc) All Part Types
(IC = –150 mAdc, VCE = –2.0 Vdc) BCP53T1
BCP53–10T1
BCP53–16T1
(IC = –500 mAdc, VCE = –2.0 Vdc) All Part Types
hFE 25
40
63
100
25
–
–
–
–
–
–
250
160
250
–
–
Collector-Emitter Saturation Voltage (IC = –500 mAdc, IB = –50 mAdc) VCE(sat) – – –0.5 Vdc
Base-Emitter On Voltage (IC = –500 mAdc, VCE = –2.0 Vdc) VBE(on) – – –1.0 Vdc
DYNAMIC CHARACTERISTICS
Current-Gain – Bandwidth Product
(IC = –10 mAdc, VCE = –5.0 Vdc, f = 35 MHz) fT– 50 – MHz
TYPICAL ELECTRICAL CHARACTERISTICS
500
200
100
50
201 3 5 10 30 50 100 300 500 1000
IC, COLLECTOR CURRENT (mA)
h , DC CURRENT GAIN
FE
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (mA)
f , CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
Figure 2. Current Gain Bandwidth Product
1000
1 10 100
500
300
100
20
50
IC, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
Figure 3. Saturation and “ON” Voltages
1000
1
1
0.8
0.6
0.4
0
0.2
10010
120
110
100
90
80
70
60
50
40
30
20
10
02018161412108642
0
V, VOLTAGE (VOLTS)
Figure 4. Capacitances
C, CAPACITANCE (pF)
VCE = 2 V
VCE = 2 V
V(BE)sat @ IC/IB = 10
V(BE)on @ VCE = 2 V
V(CE)sat @ IC/IB = 10
Cib
Cob
BCP53T1 Series
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3
INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE
POWER DISSIPATION
The power dissipation of the SOT-223 is a function of the
input pad size. These can vary from the minimum pad size
for soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT-223 package, PD can be calculated as
follows.
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 1.5 watts.
PD = 150°C – 25°C= 1.5 watts
83.3°C/W
The 83.3°C/W for the SOT-223 package assumes the
recommended collector pad area of 965 sq. mils on a glass
epoxy printed circuit board to achieve a power dissipation
of 1.5 watts. If space is at a premium, a more realistic
approach is to use the device at a PD of 833 mW using the
footprint shown. Using a board material such as Thermal
Clad, a power dissipation of 1.6 watts can be achieved
using the same footprint.
MOUNTING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.079
2.0
0.15
3.8
0.248
6.3
0.079
2.0
0.059
1.5
0.059
1.5
0.059
1.5
0.091
2.3
mm
inches
0.091
2.3
SOT–223
BCP53T1 Series
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT–223
CASE 318E–04
ISSUE K
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
H
S
F
A
B
D
G
L
4
123
0.08 (0003)
C
MK
J
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.249 0.263 6.30 6.70
INCHES
B0.130 0.145 3.30 3.70
C0.060 0.068 1.50 1.75
D0.024 0.035 0.60 0.89
F0.115 0.126 2.90 3.20
G0.087 0.094 2.20 2.40
H0.0008 0.0040 0.020 0.100
J0.009 0.014 0.24 0.35
K0.060 0.078 1.50 2.00
L0.033 0.041 0.85 1.05
M0 10 0 10
S0.264 0.287 6.70 7.30
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
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without further notice to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BCP53T1/D
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