© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 8 Publication Order Number:
BAT54LT1/D
BAT54LT1
Preferred Device
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc
Pb−Free Package is Available
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Symbol Value Unit
Reverse Voltage VR30 Volts
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
PF200
2.0 mW
mW/°C
Forward Current (DC) IF200 Max mA
Junction Temperature TJ55 to +125 °C
Storage Temperature Range Tstg 55 to +150 °C
Maximum ratings are those values beyond which device damage can oc-
cur. Maximum ratings applied to the device are individual stress limit val-
ues (not normal operating conditions) and are not valid simultaneously. If
these limits are exceeded, device functional operation is not implied, dam-
age may occur and reliability may be affected.
30 VOLTS
SILICON HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
MARKING
DIAGRAM
3
12
JV3 MG
G
12
3
3
CATHODE 1
ANODE
(TO−236AB)
SOT−23
CASE 318
STYLE 8
Preferred devices are recommended choices for future use
and best overall value.
JV3 = Device Code
M = Date Code
G= Pb−Free Package
(Note: Microdot may be in either location)
Device Package Shipping
ORDERING INFORMATION
BAT54LT1 SOT−23 3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAT54LT1G SOT−23
(Pb−Free) 3000/Tape & Reel
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BAT54LT1
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage (IR = 10 μA) V(BR)R 30 Volts
Total Capacitance (VR = 1.0 V, f = 1.0 MHz) CT 7.6 10 pF
Reverse Leakage (VR = 25 V) IR 0.5 2.0 μAdc
Forward Voltage (IF = 0.1 mAdc) VF 0.22 0.24 Vdc
Forward Voltage (IF = 30 mAdc) VF 0.41 0.5 Vdc
Forward Voltage (IF = 100 mAdc) VF 0.52 0.8 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr 5.0 ns
Forward Voltage (IF = 1.0 mAdc) VF 0.29 0.32 Vdc
Forward Voltage (IF = 10 mAdc) VF 0.35 0.40 Vdc
Forward Current (DC) IF 200 mAdc
Repetitive Peak Forward Current IFRM 300 mAdc
Non−Repetitive Peak Forward Current (t < 1.0 s) IFSM 600 mAdc
BAT54LT1
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3
CT, TOATAL CAPACITANCE (pF)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2 k
820
Ω
0.1 μF
DUT
VR
100 μH0.1 μF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpT
10%
90%
IF
IR
trr T
iR(REC) = 1 mA
OUTPUT PULSE
(IF = IR = 10 mA; measure
d
at iR(REC) = 1 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
100
0.0 0.1VF, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4 0.5
10
1.0
0.1
85°C
10
0VR, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001 51015 20 25
14
0VR, REVERSE VOLTAGE (VOLTS)
12
4
2
051015 30
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
0.6
−55°C
150°C
125°C100
1000
3
0
2520
6
8
10
IR, REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
BAT54LT1
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4
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AL
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
bC
L
D
A
E
A1
e
3
12
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.35 0.54 0.69 0.014
2.10 2.40 2.64 0.083
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
HE
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.021 0.029
0.094 0.104
NOM MAX
HE
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
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BAT54LT1/D
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