MMBT3906LT1G - ON SEMICONDUCTOR - Datasheet.Directory

November, 2011 − Rev. 10

1Publication Order Number:

MMBT3906LT1/D

MMBT3906L, SMMBT3906L

General Purpose Transistor

PNP Silicon

Features

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −40 Vdc

Collector−Base Voltage VCBO −40 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−200 mAdc

Collector Current − Peak (Note 3) ICM −800 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) @ TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) @ TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

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Device Package Shipping†

ORDERING INFORMATION

MMBT3906LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT3906LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

COLLECTOR

BASE

EMITTER

SOT−23 (TO−236)

CASE 318

STYLE 6

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

2A M G

2A = Specific Device Code

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAM

SMMBT3906LT1G SOT−23

(Pb−Free)

3,000 / Tape &

Reel

SSMBT3906LT3G SOT−23

(Pb−Free)

10,000 / Tape &

Reel

MMBT3906L, SMMBT3906L

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

V(BR)CEO

−40 −

Vdc

Collector−Base Breakdown Voltage

(IC = −10 mAdc, IE = 0)

V(BR)CBO

−40 −

Vdc

Emitter−Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

V(BR)EBO

−5.0 −

Vdc

Base Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc)

IBL

− −50

nAdc

Collector Cutoff Current

(VCE = −30 Vdc, VEB = −3.0 Vdc)

ICEX

− −50

nAdc

ON CHARACTERISTICS (Note 4)

DC Current Gain

(IC = −0.1 mAdc, VCE = −1.0 Vdc)

(IC = −1.0 mAdc, VCE = −1.0 Vdc)

(IC = −10 mAdc, VCE = −1.0 Vdc)

(IC = −50 mAdc, VCE = −1.0 Vdc)

(IC = −100 mAdc, VCE = −1.0 Vdc)

HFE 60

100

−

300

−

Collector−Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VCE(sat)

−

−0.25

−0.4

Vdc

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

VBE(sat)

−0.65

−

−0.85

−0.95

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT250 −

MHz

Output Capacitance

(VCB = −5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−4.5

Input Capacitance

(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

−10

Input Impedance

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hie 2.0 12

Voltage Feedback Ratio

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hre 0.1 10

X 10−4

Small−Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hfe 100 400

−

Output Admittance

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hoe 3.0 60

mmhos

Noise Figure

(IC = −100 mAdc, VCE = −5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)

−4.0

SWITCHING CHARACTERISTICS

Delay Time (VCC = −3.0 Vdc, VBE = 0.5 Vdc,

IC = −10 mAdc, IB1 = −1.0 mAdc)

td−35

Rise Time tr−35

Storage Time (VCC = −3.0 Vdc, IC = −10 mAdc,

IB1 = IB2 = −1.0 mAdc)

ts−225 ns

Fall Time tf−75

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MMBT3906L, SMMBT3906L

http://onsemi.com

Figure 1. Delay and Rise Time

Equivalent Test Circuit

Figure 2. Storage and Fall Time

Equivalent Test Circuit

3 V

275

10 k

1N916 CS < 4 pF*

3 V

275

10 k

CS < 4 pF*

< 1 ns

+0.5 V

10.6 V 300 ns

DUTY CYCLE = 2%

< 1 ns

+9.1 V

10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 ms

* Total shunt capacitance of test jig and connectors

TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

REVERSE BIAS (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

Figure 5. Turn −On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

Figure 6. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

MMBT3906L, SMMBT3906L

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TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = −5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 7.

f, FREQUENCY (kHz)

2.0

3.0

4.0

5.0

1.0

0.1

Figure 8.

Rg, SOURCE RESISTANCE (k OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 mA

IC = 100 mA

SOURCE RESISTANCE = 200 W

IC = 1.0 mA

SOURCE RESISTANCE = 200 W

IC = 0.5 mA

SOURCE RESISTANCE = 2.0 k

IC = 100 mA

SOURCE RESISTANCE = 2.0 k

IC = 50 mA

h PARAMETERS

(VCE = −10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 9. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 10. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , DC CURRENT GAIN

h , OUTPUT ADMITTANCE ( mhos)

Figure 11. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 12. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5 10

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (X 10 )

h , INPUT IMPEDANCE (k OHMS)

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

-4

0.7 7.0

7.0

3.0

0.7

0.3

0.7 7.0

MMBT3906L, SMMBT3906L

http://onsemi.com

TYPICAL STATIC CHARACTERISTICS

Figure 13. DC Current Gain

IC, COLLECTOR CURRENT (mA)

100

1000

1.0

TJ = 150°C

25°C

-55°C

hFE, DC CURRENT GAIN

10 100 1000

VCE = 1 V

Figure 14. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

MMBT3906L, SMMBT3906L

http://onsemi.com

Figure 15. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 16. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.05

0.10

0.15

0.25

0.35

0.40

0.50

10.10.010.0010.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 17. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.0010.0001

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

VBE(on), BASE−EMITTER VOLTAGE (V)

0.30

IC/IB = 10 150°C

25°C

−55°C

IC/IB = 10

150°C

25°C

−55°C

VCE = 1 V

150°C

25°C

−55°C

0.20

0.45

Figure 18. Current Gain Bandwidth vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

10001001010.1

100

1000

, CURRENT−GAIN−BANDWIDTH

PRODUCT (MHz)

VCE = 2 V

TA = 25°C

VCE (Vdc)

1001010.10.01

0.001

0.01

0.1

IC (A)

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

IC, COLLECTOR CURRENT (mA)

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100 200

-1.0

-1.5

-2.0

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

qVC FOR VCE(sat)

qVB FOR VBE(sat)

, TEMPERATURE COEFFICIENTS (mV/ C)°

Figure 19. Temperature Coefficients Figure 20. Safe Operating Area

MMBT3906L, SMMBT3906L

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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MMBT3906LT1/D

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