PAGE . 1
STAD-MAR.08.2004
SURFACE MOUNT SILICON ZENER DIODES
VOLTAGE 2.4 - 39 Volts POWER 410 mWatts
FEATURES
• Pla nar Die construction
• 410mW Power Dissi pation
• Ideally Suited for Automated Assembly Processes
• Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb
Pb free: 98.5% Sn above
MECHANICAL DATA
• Case: SOT-23, Molded Plastic
• Terminals: Solderable per MIL-STD-202, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.008 gram s
• Mounting Position: Any
MAXIMUM RA TINGS AND ELECTRICAL CHARACTERISTICS
.083(2.10)
.020(.50)
.006(.15)
.119(3.00)
.056(1.40)
.103(2.60)
.044(1.10)
.007(.20)MIN
.066(1.70)
.006(.15)MAX
.013(.35)
.002(.05)
.110(2.80)
.047(1.20)
.086(2.20)
.035(0.90)
SOT- 23
Unit: inch (mm)
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum.
C. For Structure Purpose only.
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DATA SHEET
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PAGE . 2
STAD-MAR.08.2004
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4V2C48XZB 1W 4.2 82.2 25.2 001 0.5 006 00.1 05 0.1
7V2C48XZB 2W 7.2 75.2 48.2 001 0.5 006 00.1 02 0.1
3C48XZB 3W 3 58.2 51.3 59 0.5 006 00.1 01 0.1
3V3C48XZB 4W 3.3 41.3 74.3 59 0.5 006 00.1 0.5 0.1
6V3C48XZB 5W 6.3 24.3 87.3 09 0.5 006 00.1 0.5 0.1
9V3C48XZB 6W 9.3 17.3 01.4 09 0.5 006 00.1 0.3 0.1
3V4C48XZB 7W 3.4 90.4 25.4 09 0.5 006 00.1 0.3 0.1
7V4C48XZB 8W 7.4 74.4 49.4 08 0.5 005 00.1 0.3 0.2
1V5C48XZB 9W 1.5 58.4 63.5 06 0.5 084 00.1 0.2 0.2
6V5C48XZB AW 6.5 23.5 88.5 04 0.5 004 00.1 0.1 0.2
2V6C48XZB BW 2.6 98.5 15.6 01 0.5 051 00.1 0.3 0.4
8V6C48XZB CW 8.6 64.6 41.7 51 0.5 08 00.1 0.2 0.4
5V7C48XZB DW 5.7 31.7 88.7 51 0.5 08 00.1 0.1 0.5
2V8C48XZB EW 2.8 97.7 16.8 51 0.5 08 00.1 7.0 0.5
1V9C48XZB FW 1.9 56.8 65.9 51 0.5 001 00.1 5.0 0.6
01C48XZB GW 01 05.9 05.01 02 0.5 051 00.1 2.0 0.7
11C48XZB HW 11 54.01 55.11 02 0.5 051 00.1 1.0 0.8
21C48XZB IW 21 04.11 06.21 52 0.5 051 00.1 1.0 0.8
31C48XZB KW 31 53.21 56.31 03 0.5 071 00.1 1.0 0.8
51C48XZB LW 51 52.41 57.51 03 0.5 002 00.1 1.0 5.01
61C48XZB MW 61 02.51 08.61 04 0.5 002 00.1 1.0 2.11
81C48XZB NW 81 01.71 09.81 54 0.5 522 00.1 1.0 6.21
02C48XZB OW 02 00.91 00.12 55 0.5 522 00.1 1.0 0.41
22C48XZB PW 22 09.02 01.32 55 0.5 052 00.1 1.0 4.51
42C48XZB RW 42 08.22 02.52 07 0.5 052 00.1 1.0 8.61
72C48XZB SW 72 56.52 53.82 08 0.5 003 00.1 1.0 9.81
03C48XZB TW 03 05.82 05.13 08 0.5 003 00.1 1.0 0.12
33C48XZB UW 33 53.13 56.43 08 0.5 523 00.1 1.0 1.32
63C48XZB WW 63 02.43 08.73 09 0.5 053 00.1 1.0 2.52
93C48XZB XW 93 50.73 59.04 031 0.5 053 00.1 1.0 3.72
ST ANDARD VOLT AGE TOLERANCE IS + 5% AND :
SUFFIX “ B “ FOR + 2%
SUFFIX “ C “ FOR + 5%
PAGE . 3
STAD-MAR.08.2004
-1
0
1
2
3
4
5
6
7
8
12111098765432
-2
-3
100101
1000
100
10
1
IZ=1mA
5mA
20 mA
T
J
=25 C
O
I
Z(AC)=0.1
I
F=1 kHZ
Z(DC)
1.21.11.00.90.80.70.60.50.4
1000
100
10
1
75 C
O
5C
O
25 C
O
150 C
O
100
1000
100
10
1101
BIASAT
50% OF V
ZNOM
0VBIAS
1VBIAS
T=25CA
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100
10
1
10 100
0.6
0.5
0.4
0.3
0.2
0.1
01251007550250
T=25CA
O
150
Fig.1 TEMPERATURE COEFFICENTS Fig.2 TEMPERATURE COEFFICENTS
Fig.4 TYPICAL FORWARD VOLTAGE
Fig.5 STEADY STATE POWER DERATING Fig.6 TYPICAL CAPACITANCE
Fig.3 EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
NOMINAL ZENER VOLTAGE,VOLTSNOMINAL ZENER VOLTAGE,VOLTS
FORWARD VOLTAGE, VOLTS
NORMAL ZENER VOLTAGE, VOLTS
NORMAL ZENER VOLTAGE, VOLTS
TEMPERATURE ( C)
O
TEMPERATURE COEFFICIENT,(mA/ C)
O
TEMPERATURE COEFFICIENT,(mA/ C)
O
DYNAMIC IMPEDANCE,W
POWER DISSIPATION, Watts
CAPACITANCE,pF FORWARD CURRENT,mA
PAGE . 4
STAD-MAR.08.2004
90
1000
100
10
1
0.1
0.01
0.001
0.0001
0.00001 80706050403020100
+150 C
O
+25 C
O
-55 C
O
12
100
10
1
0.1
0.01 1086420
T=25C
Ao
100
10
1
0.1
0.0110 30 50 70 90
T=25 C
Ao
Fig.9 TYPICAL LEAKAGE CURRENT
Fig.7 ZENER VOLTAGE VERSUS ZENER CURRENT Fig.8 ZENER VOLTAGE VERSUS ZENER CURRENT
LEAKAGE CURRENT,uA ZENER CURRENT,mA
ZENER CURRENT,mA
NORMAL ZENER VOLTAGE, VOLTS
ZENER VOLTAGE, VOLTS ZENER VOLTAGE, VOLTS
