NTE2348 Silicon NPN Transistor High Voltage, High Speed Switch Features: D High Breakdown Voltage, High Reliability D Fast Switching Speed D Wide Safe Operating Area Absolute Maximum ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1100V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A Collector Dissipation (TC = +25C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Note 1. Pulse Width 300s, Duty Cycle 10%. Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICBO VCB = 800V, IE = 0 - - 10 A Emitter Cutoff Current IEBO VEB = 5V, IC = 0 - - 10 A hFE (1) VCE = 5V, IC = 800mA 10 - - hFE (2) VCE = 5V, IC = 4A 8 - - fT VCE = 10V, IC 800mA - 15 - MHz Cob VCB = 10V, f = 1MHz - 215 - pF DC Current Gain Gain Bandwidth Product Output Capacitance Collector-Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 1.2mA - - 2.0 V Base-Emitter Saturation Voltage VBE(sat) - - 1.5 V IC = 6A, IB = 1.2mA Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector-Base Breakdown Voltage Symbol Test Conditions V(BR)CBO IC = 1mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = Emitter-Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 Collector-Emitter Sustaining Voltage VCEX(sus) IC = 6A, IB1 = IB2 = 1.2mA, L = 2mH, Clamped Turn-On Time ton Storage Time tstg Fall Time VCC = 400V, IB1 = -2.5A, IB2 =IC = 8A, RL = 50 tf .190 (4.82) Min Typ Max Unit 1100 - - V 800 - - V 7 - - V 800 - - V - - 0.5 s - - 3.0 s - - 0.3 s .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47)