NTE2348
Silicon NPN Transistor
High Voltage, High Speed Switch
Features:
DHigh Breakdown Voltage, High Reliability
DFast Switching Speed
DWide Safe Operating Area
Absolute Maximum ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, VCBO 1100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO 7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 12A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 30A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (TC = +25°C), PC150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width ≤ 300µs, Duty Cycle ≤ 10%.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 800V, IE = 0 – – 10 µA
Emitter Cutoff Current IEBO VEB = 5V, IC = 0 – – 10 µA
DC Current Gain hFE (1) VCE = 5V, IC = 800mA 10 – –
hFE (2) VCE = 5V, IC = 4A 8––
Gain Bandwidth Product fTVCE = 10V, IC 800mA – 15 – MHz
Output Capacitance Cob VCB = 10V, f = 1MHz – 215 – pF
Collector–Emitter Saturation Voltage VCE(sat) IC = 6A, IB = 1.2mA – – 2.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 6A, IB = 1.2mA – – 1.5 V
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 1100 – – V
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, RBE = ∞800 – – V
Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 7– – V
Collector–Emitter Sustaining Voltage VCEX(sus) IC = 6A, IB1 = IB2 = 1.2mA,
L = 2mH, Clamped 800 – – V
Turn–On Time ton VCC = 400V, IB1 = –2.5A,
Ω
– – 0.5 µs
Storage Time tstg IB2 =IC = 8A, RL = 50Ω– – 3.0 µs
Fall Time tf– – 0.3 µs
.615 (15.62).190 (4.82)
.126
(3.22)
Dia
.215 (5.47)
BCE
.787
(20.0)
.787
(20.0)
.591
(15.02)
C
