1
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
SOT-323-3
Drain
Pin 2
Gate
Pin 1
Source
Pin 3
MOSFET
OptiMOSª2Small-Signal-Transistor,30V
Features
•N-channel
•Enhancementmode
•Logiclevel(4.5Vrated)
•Avalancherated
•QualifiedaccordingtoAECQ101
•100%lead-free;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter Value Unit
VDS 30 V
RDS(on),max,VGS=4.5V 600 mΩ
RDS(on),max,VGS=10V 400 mΩ
ID0.88 A
Type/OrderingCode Package Marking RelatedLinks
BSS340NW PG-SOT323 XGs -
2
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Continuous drain current ID-
-
-
-
0.88
0.71 ATA=25°C
TA=70°C
Pulsed drain current ID,pulse - - 3.5 A TA=25°C
Avalanche energy, single pulse EAS - - 1.6 mJ ID=0.88A,RGS=16Ω
Reversediodedv/dtdv/dt- - 6 kV/µs ID=0.88A,VDS=16V,di/dt=200A/µs,
Tj,max=150°C
Gate source voltage VGS -20 - 20 V -
Power dissipation Ptot - - 0.5 W TA=25°C
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;
DIN IEC 68-1: 55/150/56
ESD Class - - - 0 - JESD22-A114 -HBM,
ESD Class 0 = < 250V
Soldering Temperature - - - 260 °C -
2Thermalcharacteristics
Table3Thermalcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Thermal resistance, junction - ambient,
minimal footprint1) RthJA - - 250 K/W -
3Electricalcharacteristics
Table4Staticcharacteristics
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=250µA
Gate threshold voltage VGS(th) 1.2 1.6 2.0 V VDS=VGS,ID=1.6µA
Drain-source leakage current IDSS -
-
-
-
0.01
5AVDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=150°C
Gate-source leakage current IGSS - - 10 nA VGS=20V,VDS=0V
Drain-source on-state resistance RDS(on) -
-
447
286
600
400 mΩVGS=4.5V,ID=0.29A
VGS=10V,ID=0.88A
Transconductance gfs - 1.2 - S |VDS|>2|ID|RDS(on)max,ID=0.71A
1) Performed on 40 mm x 40 mm FR4 PCB. The traces are 1mm wide, 70m thick and 20mm long; they are present on
both sides of the PCB
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OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
Table5Dynamiccharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Input capacitance Ciss - 31 41 pF VGS=0V,VDS=15V,f=1MHz
Output capacitance Coss - 12 16 pF VGS=0V,VDS=15V,f=1MHz
Reverse transfer capacitance Crss - 2.4 3.6 pF VGS=0V,VDS=15V,f=1MHz
Turn-on delay time td(on) - 2.6 - ns VDD=15V,VGS=10V,ID=0.88A,
RG,ext=6Ω
Rise time tr- 6.3 - ns VDD=15V,VGS=10V,ID=0.88A,
RG,ext=6Ω
Turn-off delay time td(off) - 4.6 - ns VDD=15V,VGS=10V,ID=0.88A,
RG,ext=6Ω
Fall time tf- 2.5 - ns VDD=15V,VGS=10V,ID=0.88A,
RG,ext=6Ω
Table6Gatechargecharacteristics1)
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Gate to source charge Qgs - 0.11 0.15 nC VDD=15V,ID=0.88A,VGS=0to10V
Gate to drain charge Qgd - 0.08 0.1 nC VDD=15V,ID=0.88A,VGS=0to10V
Gate charge total Qg- 0.46 0.7 nC VDD=15V,ID=0.88A,VGS=0to10V
Gate plateau voltage Vplateau - 3.6 - V VDD=15V,ID=0.88A,VGS=0to10V
Table7Reversediode
Values
Min. Typ. Max.
Parameter Symbol Unit Note/TestCondition
Diode continous forward current IS- - 0.4 A TA=25°C
Diode pulse current IS,pulse - - 3.5 A TA=25°C
Diode forward voltage VSD - 0.9 1.1 V VGS=0V,IF=0.88A,Tj=25°C
Reverse recovery time1) trr - 7.8 - ns VR=15V,IF=0.88A,diF/dt=100A/µs
Reverse recovery charge1) Qrr - 1.9 - nC VR=15V,IF=0.88A,diF/dt=100A/µs
1) Defined by design. Not subjected to production test.
5
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TA[°C]
Ptot[W]
0 40 80 120
0.0
0.1
0.2
0.3
0.4
0.5
0.6
Ptot=f(TA)
Diagram2:Draincurrent
TA[°C]
ID[A]
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
ID=f(TA);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A]
10-1 100101102
10-3
10-2
10-1
100
101
1µs
100 µs
1 ms
10 ms
DC
ID=f(VDS);TA=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJA[K/W]
10-5 10-4 10-3 10-2 10-1 100101102
100
101
102
103
0.5
0.2
0.1
0.05
0.01
single pulse
ZthJA=f(tp);parameter:D=tp/T
6
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A]
01234
0
1
2
3
4
5
6 V
10 V
4.5 V
5 V
4V
3.5V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on)[mΩ]
0 1 2 3 4
0
100
200
300
400
500
600
700
800
900
1000
1100
1200
3.5V
4 V
4.5 V
5 V
6 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A]
0246
0.0
0.4
0.8
1.2
1.6
2.0
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max
Diagram8:Typ.forwardtransconductance
ID[A]
gfs[S]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0
0.5
1.0
1.5
2.0
2.5
gfs=f(ID);Tj=25°C
7
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on)[mΩ]
-60 -20 20 60 100 140
0
100
200
300
400
500
600
700
800
900
1000
max
typ
RDS(on)=f(Tj);ID=0.88A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th)[V]
-60 -20 20 60 100 140
0.0
0.4
0.8
1.2
1.6
2.0
2.4
min
typ
max
VGS(th)=f(Tj);VDS=VGS;ID=1.6µA;parameter:ID
Diagram11:Typ.capacitances
VDS[V]
C[pF]
0 10 20 30
100
101
102
Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz;Tj=25°C
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF[A]
0.0 0.4 0.8 1.2 1.6
10-3
10-2
10-1
100
101
25 °C
150 °C
25 °C, max
150 °C, max
IF=f(VSD);parameter:Tj
8
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV[A]
100101102103104
10-2
10-1
100
101
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=16Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS[V]
0.0 0.1 0.2 0.3 0.4 0.5
0
1
2
3
4
5
6
7
8
9
10
6 V
24 V
15 V
VGS=f(Qgate);ID=0.88Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Tj[°C]
VBR(DSS)[V]
-60 -20 20 60 100 140 180
25
27
29
31
33
35
37
VBR(DSS)=f(Tj);ID=250µA
Gate charge waveforms
9
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
5PackageOutlines
Figure1OutlinePG-SOT323,dimensionsinmm
10
OptiMOSª2Small-Signal-Transistor,30V
BSS340NW
Rev.2.0,2016-06-23Final Data Sheet
RevisionHistory
BSS340NW
Revision:2016-06-23,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-06-23 Release of final version
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