1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high linearity RF transistor
110 GHz fT silicon germanium technology
Optimal linearity for low current and high gain
Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.8 GHz
Low component count Wi-Fi LNA application circuits available for 2.4 GHz ISM band
and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
Low current: 10.8 mA
Noise figure < 1.2 dB
Gain: 13.1 dB at 2.4 GHz, 12.2 dB at 5 GHz
High IP3: 15.7 dBm at 2.4 GHz, 18.8 d Bm at 5 GHz
Very fast on/off times
Unconditionally stable
Higher IP3, higher gain or lower noise figure possible with different application circuits
1.3 Applications
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
ZigBee
BFU768F
NPN wideband silicon germanium RF transistor
Rev. 1.2 — 24 December 2012 Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 2 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
2. Pinning information
3. Ordering information
Table 1. Quick reference data
Wi-Fi LNA applications circuits; IC= 10.8 mA; VCE = 2.1 V; Tamb =25C; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base voltage open emitter - - 10 V
VCEO collector-emitter voltage open base - - 2.8 V
VEBO emitter-base voltage open collector - - 1.0 V
ICcollector current - - 70 mA
hFE DC current gain IC=10mA; V
CE =2V;
Tj=25C155 330 505
s212insertion power gain f = 2.4 G Hz - 13.1 - dB
f = 5.0 GHz - 12.2 - dB
f = 5.9 GHz - 11.1 - dB
NF noise figure f = 2.4 GHz - 1.1 - dB
f=5.0GHz - 1.1 - dB
f=5.9GHz - 1.2 - dB
IP3 third-order intercept
point f = 2.4 GHz - 15.7 - dBm
f = 5.0 GHz - 18.8 - dBm
f = 5.9 GHz - 18.8 - dBm
Table 2. Discrete pinning
Pin Description Simplified outline Graphic symbol
1emitter
2base
3emitter
4 collector
12
34
mbb159
4
1, 3
2
Table 3. Ordering information
Type number Package
Name Description Version
BFU768F - plastic surface-mounted flat pack package; reverse
pinning; 4 leads SOT343F
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 3 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
4. Marking
5. Limiting values
[1] Tsp is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 4. Marking
Type number Marking Description
BFU768F ZB* * = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 10 V
VCEO collector-emitter voltage open base - 2.8 V
VEBO emitter-base voltage open collector - 1.0 V
ICcollector current - 70 mA
Ptot total power dissipation Tsp 90 C[1] - 220 mW
Tstg storage temperature 65 +150 C
Tjjunction temperature - 150 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-sp) thermal resist ance from junction to solder point 270 K/W
Fig 1. Power derating curve
Tsp (°C)
0 16012040 80
001aam862
100
150
50
200
250
Ptot
(mW)
0
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 4 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7. Characteristics
Wi-Fi LNA applications circuits; IC=10.8mA; V
CE =2.1V; T
amb =25C; unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
V(BR)CBO collector-base breakdown voltage IC=2.5A; IE=0mA 10 - - V
V(BR)CEO collector-emitter breakdown voltage IC=1mA; I
B=0mA 2.8 - - V
ICcollector current -- 70mA
ICBO collector-base cut-off current IE=0mA; V
CB = 4.5 V - - 100 nA
hFE DC current gain IC=10mA; V
CE = 2 V 155 330 505
s212insertion power gain f = 2.4 GHz - 13.1 - dB
f=5.0GHz - 12.2 - dB
f = 5.9 GHz - 11.1 - dB
NFmin minimum noise figure f = 2.4 GHz, me asured on the pins - 0.50 - dB
f = 5.8 GHz, measured on the pins - 0.74 - dB
NF noise figure f = 2.4 GHz - 1.1 - dB
f=5.0GHz - 1.1 - dB
f=5.9GHz - 1.2 - dB
RLin input return loss f = 2.4 GHz - 10.2 - dB
f=5.0GHz - 10.5 - dB
f = 5.9 GHz - 11.3 - dB
RLout output return loss f = 2.4 GHz - 11.7 - dB
f=5.0GHz - 13.7 - dB
f=5.9GHz - 19.3 - dB
PL(1dB) output power at 1 dB gain compression f = 2.4 GHz - 3.9 - dBm
f=5.0GHz - 5.9 - dBm
f=5.9GHz - 4.9 - dBm
IP3 third-order intercept point f = 2.4 GHz - 15.7 - dBm
f=5.0GHz - 18.8 - dBm
f=5.9GHz - 18.8 - dBm
ton turn-on time 2.4 GHz Wi-Fi LNA application - 170 - ns
4.9 GHz to 5.9 GHz Wi-Fi LNA application - 300 - ns
toff turn-off time 2.4 GHz Wi-Fi LNA application - 40 - ns
4.9 GHz to 5.9 GHz Wi-Fi LNA application - 12 - ns
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 5 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
Tamb =25C.
(1) IB= 180 A
(2) IB= 160 A
(3) IB= 140 A
(4) IB= 120 A
(5) IB= 100 A
(6) IB=80A
(7) IB=60A
(8) IB=40A
(9) IB=20A
VCE =2V; T
amb =25C.
Fig 2. Collector current as a function of
collector -em itter voltage; ty pic a l values Fig 3. DC current gain as a function of collector
current; typical values
VCE (V)
0321
001aam863
20
40
60
IC
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
001aam864
IC (mA)
0604020
200
300
100
400
500
hFE
0
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 6 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
f=1MHz, T
amb =25C. VCE = 1 V; f = 2 GHz; Tamb =25C.
Fig 4. Collector-base capacitance as a function of
collector-base voltage; typical values Fig 5. Transition frequency as a function of collector
current; typical values
VCE =1V; I
C=8mA; T
amb =25C. VCE =1V; I
C=50mA; T
amb =25C.
Fig 6. Gain as a function of frequen cy; typ ical values Fig 7. Gain as a function of frequency; typical values
VCB (V)
04312
001aam865
100
150
50
200
250
CCBS
(fF)
0
IC (mA)
0806020 40
001aam866
20
30
10
40
50
fT
(GHz)
0
f (GHz)
0108462
001aam868
20
10
30
40
G
(dB)
0
MSG
Gp(max)
IS21I2
f (GHz)
0108462
001aam869
20
10
30
40
G
(dB)
0
MSG
Gp(max)
IS21I2
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 7 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
VCE =2V; T
amb =25C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
IC=12mA; V
CE =2V; T
amb =25C.
Fig 8. Minimum noise figure as a func tion of
collector current; typical valu es Fig 9. Minimum noise figure as a function of
frequency; typical values
,&P$
1)PLQ
G%
f (GHz)
0108462
001aam871
0.4
0.6
0.2
0.8
1.0
NFmin
(dB)
0
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 8 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
8. Package outline
Fig 10. Package outline SOT343F
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT343F
SOT343F
05-07-12
06-03-16
UNIT A
max
mm 0.4
0.3
0.75
0.65 0.7
0.5 2.2
1.8
0.25
0.10 1.35
1.15 0.48
0.38
2.2
2.0
bp
DIMENSIONS (mm are the original dimensions)
Plastic surface-mounted flat pack package; reverse pinning; 4 leads
b1c D E e e1HE
1.151.3
Lpw y
0.10.2
0 1 2 mm
scale
detail X
Lp
c
A
E
X
HE
DA
y
bpb1
e1
e
wA
M
wA
M
12
34
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 9 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
9. Abbreviations
10. Revision history
Table 8. Abbreviations
Acronym Description
DC Direct Current
ISM Industrial, Scientific and Medical
LNA Low Noise Amplifier
NPN Negative-Positive-Negative
RF Radio Frequency
U-NII Unlicensed National Information Infrastructure
WiMAX Worldwide Interoperability for Microwave Access
WLAN Wireless Local Area Network
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BFU768F v.1.2 20121224 Product data sheet - BFU768F v.1.1
Modification: •Table 7 row PL(1dB) output power at 1 dB gain compression: replaced dB by dBm
BFU768F v.1.1 20121116 Product data sheet - BFU768F v.1
Modification: •Status distribution changed.
BFU768F v.1 201 20510 Product data sheet - -
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 10 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The pr oduct st atus of de vice(s) d escribed in th is docume nt may have changed since this docume nt was pub lished and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
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Characteristics sections of this document is not warranted. Constant or
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] dat a sheet Production This document contains the product specification.
BFU768F All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1.2 — 24 December 2012 11 of 12
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
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12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BFU768F
NPN wideband silicon germanium RF transistor
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 December 2012
Document identifier: BFU768F
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Contact information. . . . . . . . . . . . . . . . . . . . . 11
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
