IX Y CORP 8 ED Mm 4b4beeb OO0ObLOS T mm EiIX YS IXTP2N95, IXTP2N100, IXTM2N95, IXTM2N100 Ty: 3 ~I( 2 AMPS, 950-1000 V, 6.09/7.02 MAXIMUM RATINGS IXTP2N95 IXTP2N100 Parameter Sym. IXTM2N95 IXTM2N100 Unit Drain-Source Valtage (i) Voss 950 1000 Vie Drain-Gate Voltage (Reg =1.0 MQ) (1) Vocr 950 1000 Vue Gate-Source Voltage Continuous Ves +20 Vee Gate-Source Voltage Transient Vesna +30 Vv Drain Current Continuous (T, =25C) lo 2 Mac Drain Gurrent Pulsed (3) low 8 A Total Power Dissipation Pp 75 Ww Power Dissipation Derating >25C 0.6 WieG Operating and Storage Temperature Ty & Tog ~65 to +150 C Max. Lead Temp. for Soldering in 300 (1.6mm from case for 10 sec.) C ELECTRICAL CHARACTERISTICS T, =25C unless otherwise specitied Parameter Type Min. | Typ. | Max. | Units Test Conditions BVpsg Drain-Source Breakdown Voltage 2N95, 95A 950 - - Vv Veg =O0V 2N100, 100A | 1000 - = Vv 1p =250pA Vasin __ Gate Threshold Voltage ALL 2.0 - 45 Vv Vos =Vag: Ip =250uA less Gate-Source Leakage Forward ALL - - 100 nA | Vog5=20V lass Gate-Source Leakage Reverse ALL - - 100 nA | Veg=-20V loss Zero Gate Voltage Drain Current ALL - - 200 vA | Vog=Max. Ratingx08, Vg, =0V - - 1000 | pA | Vpg=Max, Ratingx0.8, Ve, =0V, T.=125C Rosten, Static Drain-Source On-State 2N95A, 100A - - 6.0 Q Vi et0V. 210A Resistance (2) 2N95, 100 - - 70 Q esto G, Forward Transconductance (2) ALL 15 2.2 - $s Vos215V, Ip =1.0A Cics Input Capacitance ALL - 720 | 900 PF | Ves=0V, Vog =25N, f=1.0 MHz Coss Output Capacitance ALL - 60 75 pF C..5 Reverse Transfer Capacitance ALL - 15 25 pF | teony Turn-On Delay Time ALL - 15 30 ns Vpsg=0.5 BV ogg: Ip =1.0A, Z, =202 t, Rise Time ALL - 15 35 ns ae . . T taan Turn Delay Tine ALE [=| 60 | 90__[ ns _| (MOSFET switehing tmes are essential t Falt Time ALL - 30 65 ns See Fig. 3, page 22 for test circuit.) Q, Total Gate Charge ALL - ~ 40 nC_| Veg =10V, Ip =2.0A, Vp5=0.8 Max. Rating. Oy, Gate-Source Charge ALL | = [ = | 10 | no_| (Gate charge is essonialy 'ndependent of | Qaa Gate-Drain (Miller) Charge ALL - - 15 nc for test circuit.) Wosa Unctamped Drain-to-Source 2N95AR . oo, Avalanche Energy ONIO0AR 75 - ~ mJ See Fig. 5, page 22 for test circuit. THERMAL RESISTANCE Rie Junction-to-Case ALL - - 16 | CIW Rana Junction-fo-Ambient TO-204 IXTM - - 30.0 | C/W | Free Air Operation | Rawa Junction-to-Ambient TO-220 IXTP - - 80.0 | C/W | Free Air Operation SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS is Gay Diodes ne current ALL - | - | 20 | A | Modified MOSFET symbol lsat Pulse Source Current SAT integral ifi G (Body Diode) (1) ALL _ _ 80 A reverse junction rectifier. 3 Vsa Diode Forward Voltage (2) ALL - - 16 Vv Te, =25C, |, =0A, Vag =OV t, Reverse Recovery Time ALL - 800 - ns 1;=2.0A, difdt=100A/ys (1) T,=25C to 150C (2) Pulse test: Pulse width <300us, duty cycle <2% (8) Repetitive rating: Pulse width limited by max. junction temperature. IXYS Corporation 2355 Zanker Road, San Jose, California 95131-1109 (408) 435-1900 5