1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
VN2450
Features
Free from secondary breakdown
Low input and output leakage
Low CISS and fast switching speeds
High input impedance and high gain
Applications
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
Device
Package Options BVDSS/BVDGS
(V)
RDS(ON)
(max)
(Ω)
ID(ON)
(min)
(mA)
TO-92 TO-243AA
(SOT-89)
VN2450 VN2450N3-G VN2450N8-G 500 13 500
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55°C to +150°C
Soldering temperature* +300°C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
TO-92 (N3) TO-243AA (SOT-89) (N8)
GATE
SOURCE
DRAIN
GATE
SOURCE
DRAIN
DRAIN
Product Marking
VN4EW W = Code for week sealed
= “Green” Packaging
TO-92 (N3)
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVN
2450
YYWW
TO-243AA (SOT-89) (N8)
Pin Configurations
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
2
VN2450
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Thermal Characteristics
Package
ID
(continuous)*
(mA)
ID
(pulsed)
(mA)
Power Dissipation
@TA = 25OC
(W)
θjc
(OC/W)
θja
(OC/W)
IDR
(mA)
IDRM
(mA)
TO-92 200 650 0.74 125 170 200 650
TO-243AA 250 750 1.615 78250 750
Notes:
† ID (continuous) is limited by max rated TJ,
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics (TA = 25°C unless otherwise specified)
Sym Parameter Min Typ Max Units Conditions
BVDSS Drain-to-source breakdown voltage 500 - - V VGS = 0V, ID = 2.0mA
VGS(th) Gate threshold voltage 1.5 - 4.0 V VGS = VDS, ID = 1.0mA
ΔVGS(th) Change in VGS(th) with temperature - - -5.5 mV/OC VGS = VDS, ID = 1.0mA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
IDSS Zero gate voltage drain current
- - 10 µA VGS = 0V,
VDS = Max Rating
- - 1.0 mA VDS = 0.8 Max Rating,
VGS = 0V, TA = 125OC
ID(ON) On-state drain current 0.5 - - A VGS = 10V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - - 20 ΩVGS = 4.5V, ID = 100mA
- - 13 VGS = 10V, ID = 400mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.7 %/OC VGS = 10V, ID = 400mA
GFS Forward transconductance 50 - - mmho VDS = 25V, ID = 200mA
CISS Input capacitance - - 150
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
COSS Common source output capacitance - - 50
CRSS Reverse transfer capacitance - - 25
td(ON) Turn-on delay time - - 10
ns
VDD = 25V,
ID = 250mA,
RGEN = 25Ω
trRise time - - 10
td(OFF) Turn-off delay time - - 25
tfFall time - - 20
VSD Diode forward voltage drop - - 1.5 V VGS = 0V, ISD = 400mA
Notes:
All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
All A.C. parameters sample tested.
1.
2.
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
VDD
RL
OUTPUT
D.U.T.
t(ON)
td(ON)
t(OFF)
td(OFF) tF
tr
INPUT
INPUT
OUTPUT
10V
V
DD
RGEN
0V
0V
3
VN2450
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Typical Performance Curves
0 10 20 30 40 50
0
0.2
0.4
0.6
0.8
1.0
1.2 VGS = 10V
8V
6V
5V
4V
3V
0 2 4 6 8 10
0
0.2
0.4
0.6
0.8
1.0
VGS = 10V
8V
6V
5V
4V
3V
0 0.2 0.4 0.6 0.8 1.0
0
0.1
0.2
0.3
0.4
0.5
TA = -55°C
TA = 25°C
TA = 125°C
VDS = 25V
TO-92 SOT-89
SOT-89 (pulsed)
TO-92 (pulsed)
TC = 25°C
0.01
0.1
1.0
0.001 1 100010010
1.0
0.8
0.6
0.4
0.2
0.001 100.01 0.1 1.0
SOT-89
P
D
= 1.6W
T
C
= 25°C
0
TO-92
P
D
= 1W
T
C
= 25°C
0 50 75 100 125 150
0
0.4
0.8
1.2
1.6
2.0
25
TO-92
SOT-89
Saturation Characteristics
Maximum Rated Safe Operating Area Thermal Response Characteristics
Thermal Resistance (normalized)
Transconductance vs. Drain Current Power Dissipation vs. Case Temperature
Output Characteristics
ID (amperes)
VDS (volts)
GFS (seimens)
PD (watts)
TC (OC)
ID (amperes)
VDS (volts) tp (seconds)
ID (amperes)
VDS (volts)
I
D
(amperes)
4
VN2450
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
Typical Performance Curves (cont.)
-50 0 50 100
0.8
0.9
1.0
1.1
1.2
150
0 10 20 30 40
0
75
150
225
300
0 1.0 2.0 3.0 4.0
0
2
4
6
8
10
VDS=10V
VDS=40V
f = 1MHz
CISS
COSS
CRSS
ID= 0.5A
0 0.3 0.6 0.9 1.2 1.5
0
5
10
15
20
25
30
VGS = 4.5V
VGS = 10V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125 150
VGS(th)@ 1mA
RDS(on)@ 10V, 0.4A
0.6
0.9
1.2
1.5
0.75
1.05
1.35
0123456
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VDS = 25V TA = -55
O
C
TA = 125
O
C
TA = 25
O
C
Gate Drive Dynamic Characteristics
QG (nanocoulombs)
VGS(th) (normalized)
RDS(ON) (normalized)
V(th) and RDS Variation with Temperature
On-Resistance vs. Drain Current
BVDSS Variation with Temperature
BVDSS (normalized)
Transfer Characteristics
Capacitance vs. Drain-to-Source Voltage
C (picofarads)
ID (amperes)
TJ (OC)
RDSS(ON) (ohms)
ID (amperes)
VGS (volts)
VDS (volts)
VGS (volts)
TJ (OC)
5
VN2450
1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com
3-Lead TO-92 Package Outline (N3)
Symbol A b c D E E1 e e1 L
Dimensions
(inches)
MIN .170 .014.014.175 .125 .080 .095 .045 .500
NOM - - - - - - - - -
MAX .210 .022.022.205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
Seating Plane
1
2
3
Front View Side View
Bottom View
E1 E
D
e1
L
e
c
1 2 3
b
A
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com.
©2009 All rights reserved. Unauthorized use or reproduction is prohibited.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
6
VN2450
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Doc.# DSFP-VN2450
A052209
3-Lead TO-243AA (SOT-89) Package Outline (N8)
Symbol A b b1 C D D1 E E1 e e1 H L
Dimensions
(mm)
MIN 1.40 0.44 0.36 0.35 4.40 1.62 2.29 2.00
1.50
BSC
3.00
BSC
3.94 0.89
NOM-------- --
MAX 1.60 0.56 0.48 0.44 4.60 1.83 2.60 2.29 4.25 1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
This dimension differs from the JEDEC drawing
Drawings not to scale.
Supertex Doc. #: DSPD-3TO243AAN8, Version E051509.
bb1