© by SEMIKRON B 1 – 51
SEMIPACK
®
1
Thyristor/ Diode Modules
SKKT 71 SKKH 71
SKKT 72 SKKH 72
SKKT 72B
SKKT 71 SKKH 71
SKKT 72 SKKH 72
Features
•Heat transfer through aluminium
oxide ceramic isolated metal
baseplate
•Hard soldered joints for high
reliability
•UL recognized, file no. E 63 532
Typical Applications
•DC motor control (e. g. for
machine tools)
•AC motor soft starte rs
•Temperature control (e. g. fo r
ovens, chemical processes)
•Professional light dimming
(studios, theaters)
1)
Also available in SKKT 72 B
configuration (case A 48)
2)
See the assembly instructions
3)
/20 E, /22 E max. 30 mA
V
RSM
V
RRM
(dv/ I
TRMS
(maximum value for continuous operation)
V
DRM
dt)
cr
125 A
I
TAV
(sin. 180; T
case
= 78 °C)
VVV/µs80 A
700 600 500 SKKT 71/06 D – – SKKH 72/06 D
900 800 500 SKKT 71/08 D SKKT 72/08 D
1)
SKKH 71/08 D SKKH 72/08 D
1300 1200 500 SKKT 71/12 D – SKKH 71/12 D –
1300 1200 1000 SKKT 71/12 E SKKT 72/12 E
1)
– SKKH 72/12 E
1500 1400 1000 SKKT 71/14 E SKKT 72/14 E
1)
SKKH 71/14 E SKKH 72/14 E
1700 1600 1000 SKKT 71/16 E SKKT 72/16 E
1)
SKKH 71/16 E SKKH 72/16 E
1900 1800 1000 SKKT 71/18 E SKKT 72/18 E
1)
SKKH 71/18 E SKKH 72/18 E
2100 2000 1000 SKKT 71/20 E SKKT 72/20 E
1)
– SKKH 72/20 E
2300 2200 1000 SKKT 71/22 E SKKT 72/22 E
1)
– SKKH 72/22 E
Symbol Conditions SKKT 71 SKKT 72
SKKH 71 SKKT 72B
SKKH 72
I
TAV
sin. 180; T
case
= 78 °C80 A
T
case
= 85 °C70 A
I
D
B2/B6 T
amb
= 45 °C; P 3/180 62 A/75 A
T
amb
= 35 °C; P 3/180 F 115 A/145 A
I
RMS
W1/W3 T
amb
= 35 °C; P 3/180 F 155 A/3 x 115 A
I
TSM
T
vj
= 25 °C; 10 ms 1 600 A
T
vj
= 125 °C; 10 ms 1 450 A
i
2
tT
vj
= 25 °C; 8,3 ... 10 ms 13 000 A
2
s
T
vj
= 125 °C; 8,3 ... 10 ms 10 500 A
2
s
t
gd
T
vj
= 25 °C; I
G
= 1 A; di
G
/dt = 1 A/µs1 µs
t
gr
V
D
= 0,67 . V
DRM
2 µs
(di/dt)
cr
T
vj
= 125 °C 150 A/µs
t
q
T
vj
= 125 °C typ. 80 µs
I
H
T
vj
= 25 °C; typ.150 mA; max. 250 mA
I
L
T
vj
= 25 °C; R
G
= 33 Ωtyp.300 mA; max. 600 mA
V
T
T
vj
= 25 °C; I
T
= 300 A max. 1,9 V
V
T(TO)
T
vj
= 125 °C0,9 V
r
T
T
vj
= 125 °C 3,5 mΩ
I
DD
; I
RD
T
vj
= 125 °C; V
DD
= V
DRM
; V
RD
= V
RRM
max. 20 mA
3)
V
GT
T
vj
= 25 °C; d. c. 3 V
I
GT
T
vj
= 25 °C; d. c. 150 mA
V
GD
T
vj
= 125 °C; d. c. 0,25 V
I
GD
T
vj
= 125 °C; d. c. 6 mA
R
thjc
cont. 0,35 °C/W / 0,18 °C/W
sin. 180 per thyristor/per module 0,37 °C/W / 0,19 °C/W
rec.120 0,39 °C/W / 0,20 °C/W
R
thch
0,2 °C/W / 0,1 °C/W
T
vj
, T
stg
– 40 ... +125 °C
V
isol
a. c. 50 Hz; r.m.s.; 1 s/1 min 3600 V∼ / 3000 V∼
M
1
to heatsink SI units/ 5 Nm/44 lb. in. ± 15 %
2)
M
2
to terminals US units 3 Nm/26 lb. in. ± 15 %
a5
.
9,81 m/s
2
w approx. 120 g
Case → page B 1 – 93 SKKT 71: A 5 SKKT 72: A 46
SKKH 71: A 6 SKKT 72B: A 48
SKKH 72: A 47
0896
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© by SEMIKRONB 1 – 52 http://store.iiic.cc/
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