GSs- so yz, SGS;THOMSON P0O1xxxA/B SENSITIVE GATE SCR FEATURES a IT(AMS) =0.8A w VpRM = 100V to 400V a Low Iet< 1pA maxto < 200A DESCRIPTION The PO1xxxA/B series of SCRs uses a high TO92 RD26 performance planar PNPN technology. These (Plastic) (Plastic) parts are intended for general purpose applications where low gate sensitivity is required. PO1XxxA PO1xxxB ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit I(RMs) | RMS on-state current Tl= 55C 0.8 A (180 conduction angle) lav) Mean on-state current Tl= 55C 0.5 A (180 conduction angle) Itsm Non repetitive surge peak on-state current | tp =8.3 ms 8 A (Tj initial = 25C ) tp = 10 ms 7 rt Ft Value for fusing tp =10 ms 0.24 As di/dt Critical rate of rise of on-state current 30 Ahus lg=10mA_ dig Ait = 0.1 Aus. Tstg Storage and operating junction temperature range - 40, +150 C Tj - 40, +125 Tl Maximum lead temperature for soldering during 10s at 260 C 2mm from case Voltage Symbol Parameter Unit A B Cc D VpRM Repetitive peak off-state voltage 100 | 200 | 300 | 400 V VRRM Tj =125C Rex = 1KQ January 1995 15 > MP 7929237 0070051 326 P01xxxA/B THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-a) | Junction to ambient 150 C/W Rth(j-l) | Junction to leads for DC 80 C/W GATE CHARACTERISTICS (maximum values) Pe ay=0.1W Pem=2W(tp=20us) Iam =1 A (tp = 20 us) ELECTRICAL CHARACTERISTICS Sensitivity Symbol Test Conditions Unit 02 | 09 | 11 | 15 | 18 lat Vp=12V (DC) Ri=1400 Tj= 25C | MIN 4115/05] pa MAX | 200] 1 25 | 50 5 Vet Vo=12V (DC) Ri=1400 Tj= 25C | MAX 0.8 Veo Vp=Vprm Ri=3.3kQ Tj= 125C | MIN 0.1 Rex = 1KQ VRem Ina =10nA Tj= 25C | MIN 8 V tod Vp=Vorm = ItM= 3 x hav) Tj= 25C | TYP 0.5 us dic/dt=0.1Ajus Ia=10mA Wy b= 50mA Rex = 1 KQ Tj= 25C | MAX 5 mA I le=imA Rex = 1 KO Tj= 25C | MAX 6 mA VIM hu= 1.6A tp= 380us Tj= 25C | MAX 1.93 V IDRM Vp = Vprm Rek = 1 KQ Tj= 25C | MAX 1 yA IRRM Vr = VRRM " Tj= 125C | MAX 100 pA dV/dt Vp=67%Vprm Rek=1KQ | Tj=125C} MIN | 25 | 25 | 50 | 100; 30 | Vis tq Itm= 3 x Itjav) Va=35V Tj= 125C | MAX 200 us di/dt=10A tp=100us dV/dt=10Viis Vp= 67%VprM Rak = 1 KQ ORDERING INFORMATION SCR PLANAR J PACKAGES: A=TO92 B=RD26 CURRENT SENSITIVITY VOLTAGE ky See eon M@ 7529237 0070052 262 Fig.1 : Maximum average power dissipation ver- sus average on-state current. P (Ww) 1 T T 360 0.8 A fi Lf a hm DC ALS 0.6 L, 4 = 180 Q- 120 0.4 NS O- 30* 0.2 C QL 60" 0 Cer hawt O O01 02 03 04 05 O06 O7 O08 Fig.3 : Average on-state current versus lead tem- perature. IravyfA) | 08 DG oN a 0.6 NY 0.4| = 180 TA NS 0.2 SN Tlead (C) 0 N 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. IgtiT]] Ih[T}] Igt(Tj=25 C] In[T]j=25 C} 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 TIeC) 40 -20 0 20 40 60 80 100 120 140 i. SGs THOMSON 2 MM 7929237? 0070053 1T9 mp! P01xxxA/B Fig.2 : Correlation between maximum average power dissipation and maximum allowable tem- perature (Tamb and Tlead). P (Ww) Tlead (C) 1 45 {Fthd-) 0.8% Langa) r65 0.6 IN \ 0.4 IN N e WN 0.2 105 0 Tamb () mY 5 0 20 40 60 80 100 120 140 5 Fig.4 : Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(-ayRth(/-2) 1.00 0.10 tp(s) 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.6 : Non repetitive surge peak on-state current versus number of cycles. lrsfA) 8 Tj initial = 2 7 6 5 4 3 2 1 0 Number of cycles 1 10 100 1,000 3/5 P01xxxA/B Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp < 10ms, and corresponding value of I*t. Irgm(A). Pt (A8) 100 10 0.1 1 Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Ih(Rgk) 0 in(Rgk=1k 2) 4/5 SCGS-THOMSON ky, MISREELECTASHICS 9JE.00 1.0E+01 1.0E+02 4.0E+03 1.0E+04 1.0+05 1.0E+06 Fig.8 : On-state characteristics (maximum values). IrmlA) Tj max Vio =0.95V Rt =0.600g Vem) O15 05 115 225 3 35 4 45 5 55 > MM 7929237 0070054 035 P01xxxA/B PACKAGE MECHANICAL DATA TO92 (Plastic) DIMENSIONS REF. Millimeters Inches Typ. | Min. | Max. | Typ. | Min. Max. A | 1.35 0.053 B 4.7 0.185 C | 2.54 0.100 D 44 | 48 0.173} 0.189 E 12.7 0.500 F 3.7 0.146 a 0.45 0.017 Marking : type number Weight: 0.2 g PACKAGE MECHANICAL DATA RD26 (Plastic) DIMENSIONS REF. Millimeters Inches A Typ. | Min. | Max. | Typ. | Min. | Max. c A | 2.54 0.100 | age B 3.7 0.146 C {1.35 0.053 D 44 | 48 0.173} 0.189 F E 12.7 0.500 F 4.7 0.185 G 3.0 0.118 a 0.45 0.177 Marking : type number Weight: 0.2 g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is ganted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1995 SGS-THOMSON Microelectronics - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Matta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. fyg Saas > Mf 7929237 0070055 T?l 5/5