Gg HARRIS 2N6759 2N6760 N-Channel Enhancement-Mode August 1991 Power Field-Effect Transistors Features Package TO-204AA 4.54 and 5.5A, 350V - 400V BOTTOM VIEW * tpS(on) = 1-02 and 1.59 : ie mat oe SOURCE DRAIN SOA is Power-Dissipation Limited / (FLANGE) * Nanosecond Switching Speeds * Linear Transfer Characteristics Ay High Input Impedance Majority Carrier Device GATE Description The 2N6759 and 2N6760 are n-channel enhancement-mode | Terminal Diagram silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, N-CHANNEL ENHANCEMENT MODE relay drivers, and drivers for high-power bipolar switching 4 Gi transistors requiring high speed and low gate-drive power. These D iy i types can be operated directly from integrated circuits. = 3 coat = These types are supplied in the JEDEC TO-204AA steel package. = ul G z = 5 a. s Absolute Maximum Ratings (Tc = +259C), Unless Otherwise Specified 2N6759 2N6760 UNITS Drain-Source Voltage .... 0... cece cece cence eee et eee e eee en eae Vos 350* 400* v Drain-Gate Voltage (RGS = 2O0KI1). 0. ccc e ete eee ee VDGR 350* 400* Vv Continuous Drain Current Neal 5s hk 4.5* 5.5* A To = H1009C 0c cece eee tenet tenes 3.0* 3.5* A Pulsed Drain Current 7.0 8.0 A Gate-Source Voltage +20 +20 v Maximum Power Dissipation To = +259C (See Figure 11)... cece cece een teen nee 75* 75* Ww To = +100C (See Figure 11) : 30* 30* w Linear Derating Factor (See Figure 11) 20.0.0... cece eee eee ee ete eee 0.6* 0.6* W/9G Inductive Current, Clamped .. 6... . ccc cece cece etn rene enneee ILM 7.0 8.0 A (See Figures 1 and 2, L = 100QuH) Operating and Storage Junction Temperature Range............ Ty. TSTG -55 to +150* ~55 to +150* C Maximum Lead Temperature for Soldering ............ 0c cee ee ence eee TL 300* 300* 9G (0.063 (1.6mm) from case for 10s) JEDEC registered values CAUTION: These devices are sensitive to electrostatic discharge. Proper !.C. handling procedures should be followed. Copyright Harris Corporation 1991 File Number 1588.1 4-15 Specifications 2N6759, 2N6760 Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) Parameter Type | Min. | Typ. | Mex. | Uns | Test Conditions BVosg _Orain Source Breakdown Voltage | 2N6759 | 350 - ~ Vv! Veg = 0 | 2N6760 | 400 - - vo | tg = 1.0ma Vgstth) Gate Threshold Voltage ALL 2.0 - 40 v Vos = Vos. 'o = 1mA Igsse Gate - Body Leakage Forward ALL = = toor | nA | VG = 20 ~ | 4 | GS ___- igssra Gate ~ Body Leakage Reverse ALL ~ - 100 nA | Vgg- -20V loss Zero Gate Voltage Drain Current aL - 0.4 1.0 | mA | Vgg = Max. Rating, Vgg = 0 1. - G2 40 mA | Vpg = Max. Rating, Vgg = 0, To = 125C Vpston) Static Drain-Source On-State 2N6759 - - v Vag * 10V, Ip = 4.54 Voltage 2ne760 | - - vs | Veg < 10V, Ip = 5.58 Rosten} Stauc Drain-Source On-State 2N6?59 - 1.0 2 Vgg 7 10V, [p 3A Resistance (7) 2N6760 - 08 2 | Vgg= 10V, 1p = 3.54 Rosion) Static Drain-Source On-State 2NG759 - - 2 Vgg * 10V, Ip = FA. Te = 125C Alesistance 2N6760 ~ - 2 Vg = 10V, Ip = 3.5A, Te = 125C on Forward Transconductance (1) att | ao" | 45 S18) | Vpg = 15V, 1p = 3.5A Cis Input Capacitance au. | 350 | 600 oF Vos * 9. Vpg = 25V, 1 = 1.0 MHz Coss Output Capacitance ALL so] 150 oF ce 10 Crs Reverse Transfer Capacitance ALL 20" 40 pF es ta fon) Ture-On Delay Time ALL = mS | Vop = 178V, Ip - 35A,Z, - 152 ty Rise Time ALL - - ns | (See Figs, 13 and 14) tg (oft) Turn-Off Delay Time ALL = ns (MOSFET switching times are essentially 7 Fall Time ALL = = 18 | independent of operating temperatura.) Thermal Resistance Rinse dunction-to-Case ALL ] = Rincs Case-to-Sink ALL | - Mounting surface Hat, smooth, and greased. [Rinsa _Junction-to-Ambrent ALL l ~ 4 | <c-w | Free Air Operation Body-Drain Diode Ratings and Cheracteristics Is Continuous Source Current 2N6759 | = 45 |, | Modified MOSFET symbol ~Fo) (Body Diode) 2NE6760 | = 65" showing the integral _+4 ~ reverse P-N junction rectifier 15m Pulsed Source Current 2N6759 70 A G (Bady Diade! 2N6760 z 50 5 Diode Forward Voltage) 2N6759 | 0.70" = ya | V [ Tc: 28C 1g = 45A, Vgg- 0 2n6760 | 0,75" 18 Vv | Te - 259C, Ig = 5.5A, Vgg = 0 Reverse Recovery Tima ALL | Ty 550 ns | Ty = 150C, Ip = tgyy, dip iat = 100 Alus Reverse Recovered Charge TAU = T 80 = we | Ty 180C, 1p = (gpg, dlp /dt = 100 Alas JEDEC registered values. (0) Pulse Test: Pulse Width S 300 wsec, Duty Cycle < 2% VARY tp TO OBTAIN REQUIRED PEAK 1, = 0.58Vpg5 our Ve = 0.758Vps5 Vgg* 20Vb-t c a \ Va ee Fig. 1 Clamped Inductive Test Circuit Fig. 2 Clamped Inductive Waveforms tp. ORAIN CURRENT (AMPERES) O 50 100 Vos. OMAIN TO SQURCE VOLTAGE {VOLTS} 1480 200 250 Fig. 3 Typical Output Characteristics 300 BO ws PULSE Vos = 18V Ip. ORAIN CURRENT (AMPERES) Q 1 2 3 a 5 5 7 Vas. GATE TO SOURCE VOLTAGE (VOLTS) Fig. 4 Typical Transfer Characteristics 2N6759, 2N6760 TT We tr 80 us PULSE TEST 80 us PULSE TEST Veg: 8.0V sb... - = | co 3 eb T ff ; = = # : = 2p LIA Lat i z i z 2 = = T v4 5 eb ye po : = | _ | 5 s L 3 thf --4+--+,. I L Q 2 4 a 2 4 5 8 10 Vg. GRAIN TO SGURCE VOLTAGE (VOLTS) Vs. GRAIN-TO.SOUACE VOLTAGE (VOLTS) Fig. 5 Typical Saturation Characteristics Fig. 6 Typical Saturation Characteristics (2N6759} (2N6760) 10 TT Jat 0 T T T pence to t Dus t 4 | 5760- xf Ly 2NGT59 eT: . ~ 2NG750- At iNet t | | 5.0 bk | PO ft 5-4 i . . a4 .. oe mop by . YP NT 5 roy a Ny. . 2 i | S t Bb pat 4 : a rt ! z - 2 6 h- + tee ee off Ty. -s50- = J Mw 2 | = 8 , i | 3 231 =O S ab a pew -f 4. Ty = 125C __J z ! rt <q = z a ft : an + 5 = Sep fees pores Poems oe 4d re 71K I LEE, a 28 21K + I TIT rr pm rps 1 Ty TS08C Max vi ' us * tv O7F 4 sicteruse | hoi t oc 7 7" a. 4 + pat eede | | | | tous ruse TEST | t Tota te 4 anass0 t+ eye " Li tii 5/50 | a 2 6 8 0 0 0 50 100 200 Suu '. ORAIN CURRENT (AMPERES) Vgg. URAIN TO SOURCE VOR TAGE (VOLTS) Fig. 7 ~ Typical Transconductance Vs. Drain Current Fig. 8 Maximum Safe Operating Area 2000 = g s Rogion) ORAIN-TO-SQUACE ON RESISTANCE (NORMALIZEG) C, CAPACITANCE (pF) 400 2 a 02 -40 0 40 80 120 160 0 10 20 30 40 50 Ty, JUNCTION TEMPERATURE (0C} Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig.9Normalized Typical On-Resistance Vs. Temperature Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage 4-17 2N6759, 2N6760 Pp, POWER DISSIPATION (WATTS) Q 20 40 60 80 100 120 140 Tr. CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve Vop = W5v $082 PAF = 1 kHz ty = lus Vo TO SCOPE Fig. 13 Switching Time Test Circuit 4-18 Jg, SOURCE CURRENT (AMPERES) (s, 2N6760 Ty = 190C 1 Vgp. SOURCE.TO-DRAIN VOLTAGE (VOLTS) Fig. 12 ~ Typicat Body-Drain Diode Forward Voltage GS (on) INPUT, Vj 10% VGS toff) td fon) > Vos (of) OUTPUT, Vy Vos (an) INPUT PULSE INPUT PULSE RISE TIME ~ FALL TIME a (oft) | ym 10% 0% | 90% 90% |. ton e| [tot Fig. 14 Switching Time Waveforms