
MTP3055E
N - CHANNEL 60V - 0.1Ω- 12A TO-220
STripFETMOSFET
■TYPICALRDS(on) = 0.1 Ω
■AVALANCHERUGGEDTECHNOLOGY
■100%AVALANCHE TESTED
■175oC OPERATINGTEMPERATURE
■APPLICATIONORIENTED
CHARACTERIZATION
APPLICATIONS
■HIGHCURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAYDRIVERS
■REGULATORS
■DC-DC& DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
123
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 60 V
V
DGR Drain- gate Voltage (RGS =20kΩ)60V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C12A
I
DM Drain Current (pulsed) at Tc= 100 oC9A
I
DM(•) Drain Current (pulsed) 48 A
Ptot Total Dissipation at Tc=25o
C40W
T
stg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulse width limited by safe operating area
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
TYPE VDSS RDS(on) ID
MTP3055E 60 V < 0.15 Ω12 A
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