MTP3055E
N - CHANNEL 60V - 0.1Ω- 12A TO-220
STripFETMOSFET
■TYPICALRDS(on) = 0.1 Ω
■AVALANCHERUGGEDTECHNOLOGY
■100%AVALANCHE TESTED
■175oC OPERATINGTEMPERATURE
■APPLICATIONORIENTED
CHARACTERIZATION
APPLICATIONS
■HIGHCURRENT, HIGH SPEED SWITCHING
■SOLENOID AND RELAYDRIVERS
■REGULATORS
■DC-DC& DC-AC CONVERTERS
■MOTOR CONTROL, AUDIO AMPLIFIERS
■AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
July 1999
123
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS =0) 60 V
V
DGR Drain- gate Voltage (RGS =20kΩ)60V
V
GS Gate-source Voltage ±20 V
IDDrain Current (continuous) at Tc=25o
C12A
I
DM Drain Current (pulsed) at Tc= 100 oC9A
I
DM(•) Drain Current (pulsed) 48 A
Ptot Total Dissipation at Tc=25o
C40W
T
stg Storage Temperature -65 to 175 oC
TjMax. Operating Junction Temperature 175 oC
(•) Pulse width limited by safe operating area
First digit of the datecode being Z or K identifies silicon characterized in this datasheet.
TYPE VDSS RDS(on) ID
MTP3055E 60 V < 0.15 Ω12 A
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THERMAL DATA
Rthj-case
Rthj-amb
Rthc-s
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
3.75
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax) 12 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =25V) 50 mJ
ELECTRICAL CHARACTERISTICS (Tcase =25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID=250µ
AV
GS =0 60 V
I
DSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRatingx0.8 T
c=125o
C1
10 µA
µA
IGSS Gate-body Leakage
Current (VDS =0) V
GS =± 20 V ±100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID= 250 µA22.94V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=7A 0.1 0.15 Ω
I
D(on) On State Drain Current VDS >I
D(on) xR
DS(on)max VGS =10V 12 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=6A 4 6 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 760
100
30
pF
pF
pF
MTP3055E
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =30V I
D=7A
R
G=50
Ω VGS =10V
(see test circuit)
20
65
70
35
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID=12A V
GS =10V
V
DD =40V
(see test circuit)
15
7
5
nC
nC
nC
SOURCE DRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)
Source-drain Current
Source-drain Current
(pulsed)
12
48 A
A
VSD (∗)ForwardOnVoltage I
SD =12A V
GS =0 2.0 V
t
rr
Qrr
Reverse Recovery
Time
Reverse Recovery
Charge
ISD = 12 A di/dt = 100 A/µs
VDD =30V T
j= 150 oC65
0.17
ns
µC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
SafeOperating Area Thermal Impedance
MTP3055E
3/8
OutputCharacteristics
Transconductance
Gate Chargevs Gate-sourceVoltage
Transfer Characteristics
Static Drain-source On Resistance
CapacitanceVariations
MTP3055E
4/8
Normalized Gate ThresholdVoltage vs
Temperature
Source-drainDiode Forward Characteristics
Normalized On Resistancevs Temperature
MTP3055E
5/8
Fig. 1: UnclampedInductiveLoadTest Circuit
Fig. 3: Switching Times Test CircuitsFor
Resistive Load
Fig. 2: UnclampedInductive Waveform
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For InductiveLoad Switching
And Diode Recovery Times
MTP3055E
6/8
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220 MECHANICAL DATA
P011C
MTP3055E
7/8
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MTP3055E
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