© 2016 IXYS CORPORATION, All Rights Reserved
IXGN200N170 VCES = 1700V
IC90 = 160A
VCE(sat)
2.6V
tfi(typ) = 535ns
DS100718(4/16)
Features
miniBLOC, with Aluminium Nitride
Isolation
International Standard Package
Isolation Voltage 2500V~
High Current Handling Capability
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 3mA, VGE = 0V 1700 V
VGE(th) IC= 1mA, VCE = VGE 3.5 5.5 V
ICES VCE = VCES, VGE = 0V 25 A
TJ = 125C 5 mA
IGES VCE = 0V, VGE = 20V 200 nA
VCE(sat) IC= 100A, VGE = 15V, Note 1 2.1 2.6 V
TJ = 125C 2.5 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1700 V
VCGR TJ= 25°C to 150°C, RGE = 1M 1700 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC = 25°C (Chip Capability) 280 A
ILRMS Terminal Current Limit 200 A
IC90 TC = 90°C 160 A
ICM TC= 25°C, 1ms 1050 A
SSOA VGE = 15V, TVJ = 125°C, RG = 1 ICM = 300 A
(RBSOA) Clamped Inductive Load 1360 V
PCTC= 25°C 1250 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in
Terminal Connection Torque 1.3/11.5 Nm/lb.in
Weight 30 g
High Voltage
IGBT
Advance Technical Information
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
either emitter terminal can be used as
Main or Kelvin Emitter
G
E
E
C
E153432
E
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N170
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 50 82 S
Cies 12.5 nF
Coes VCE = 25V, VGE = 0V, f = 1MHz 580 pF
Cres 220 pF
Qg(on) 540 nC
Qge IC = 200A0, VGE = 15V, VCE = 0.5 • VCES 78 nC
Qgc 265 nC
td(on) 37 ns
tri 133 ns
Eon 28 mJ
td(off) 320 ns
tfi 535 ns
Eoff 30 mJ
td(on) 40 ns
tri 143 ns
Eon 31 mJ
td(off) 430 ns
tfi 610 ns
Eoff 44 mJ
RthJC 0.10 °C/W
RthCS 0.05 °C/W
Inductive load, TJ = 25°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
Inductive load, TJ = 125°C
IC = 100A, VGE = 15V
VCE = 0.5 • VCES, RG = 1
Note 2
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
SOT-227B miniBLOC (IXGN)
© 2016 IXYS CORPORATION, All Rights Reserved
IXGN200N170
Fig. 5. Input Admittance
0
50
100
150
200
4.04.55.05.56.06.57.07.58.08.5
V
GE
- Volts
I
C
-
Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 6. Transconductance
0
20
40
60
80
100
120
140
160
0 20 40 60 80 100 120 140 160 180 200 220
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 1. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
012345678910
V
CE
- Volts
I
C
-
Amperes
VGE = 15V
12V
10V
9V
8V
7V
6V
Fig. 2. Output Characteristics @ T
J
= 125ºC
0
50
100
150
200
250
300
0123456
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
5V
VGE = 15V
13V
11V
10V 9V
Fig. 3. Depende nc e of V
CE(sat)
on
Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE = 15V
I C = 200A
I C = 100A
I C = 300A
Fig. 4. Collec tor-to -Emitter Voltage vs.
Gate-to-Emitter Voltage
1
2
3
4
5
6
7
8
7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I C = 300A
TJ = 25ºC
200A
100A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N170
Fig. 9. Reverse-Bias Safe Operating Area
0
50
100
150
200
250
300
350
250 500 750 1000 1250 1500
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 1Ω
dv / dt < 10V / ns
Fig. 10. Maximum Transient Thermal Impedance
0.0001
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
Fig. 7. Gate Charge
0
2
4
6
8
10
12
14
16
0 50 100 150 200 250 300 350 400 450 500 550
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 200A
I
G
= 10mA
Fig. 8. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Cies
Coes
Cres
© 2016 IXYS CORPORATION, All Rights Reserved
IXGN200N170
Fig. 11. Inductive Switching Energy Loss vs.
Gate Resistance
20
25
30
35
40
45
50
55
60
12345678910
R
G
- Ohms
E
off - MilliJoules
5
10
15
20
25
30
35
40
45
E
on
- MilliJoules
E
off
E
on
T
J
= 125ºC , V
GE
= 15V
V
CE
= 850V
I
C
= 50A
I
C
= 100A
Fig. 1 4. Inductive Turn-off Switching Tim es vs.
Gate Resistance
500
600
700
800
900
1000
12345678910
R
G
- Ohms
t
f i
- Nanoseconds
300
500
700
900
1100
1300
t
d(off)
- Nanoseconds
t
f i
t
d(off)
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
Fig. 12. Inductive Switching Energy Loss vs.
Collect o r Cu rrent
15
20
25
30
35
40
45
50
55
50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
4
8
12
16
20
24
28
32
36
E
on
- MilliJoules
E
off
E
on
R
G
= 1ΩV
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Inductive Switching Energy Loss vs.
Junction Temperature
10
15
20
25
30
35
40
45
50
55
60
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
4
8
12
16
20
24
28
32
36
40
44
E
on
- MilliJoules
E
off
E
on
R
G
= 1ΩV
GE
= 15V
V
CE
= 850V
I
C
= 50A
I
C
= 100A
Fig. 15 . Inductive Turn-off Switching Times vs.
Collect o r Cu rrent
400
500
600
700
800
900
1000
50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fig. 1 6 . Inductive Turn-off Switching Times vs.
Junction Temperature
400
500
600
700
800
900
1000
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
200
300
400
500
600
700
800
t
d(off)
- Nanoseconds
t
f i
t
d(off)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGN200N170
IXYS REF: IXG_200N170 (9M) 4-21-16
Fig. 18. Inductive Tu rn-on Switching T imes vs.
Collecto r Current
0
20
40
60
80
100
120
140
160
180
200
50 60 70 80 90 100
I
C
- Amperes
t
r i
- Nanoseconds
30
33
36
39
42
45
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
T
J
= 25ºC
T
J
= 125ºC
Fig. 19. Inductive Turn-on Switching Times vs.
Junction Temperature
0
25
50
75
100
125
150
175
200
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i
- Nanoseconds
30
32
34
36
38
40
42
44
46
t
d(on)
- Nanoseconds
t
r i
t
d(on)
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 850V
I
C
= 100A
I
C
= 50A
Fig. 17. Inductive Tu rn-on Switching T imes vs.
Gate Resistance
0
20
40
60
80
100
120
140
160
180
200
12345678910
R
G
- Ohms
t
r i
- Nanoseconds
0
10
20
30
40
50
60
70
80
90
100
t
d(on)
- Nanoseconds
t
r i
t
d(on)
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 50A
I
C
= 100A
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