1
®
FN7039.2
EL1503A
High Power Differential Line Driver
The EL1503A ADSL Line Driver contains two wideband
high-voltage drivers which are ideally suited for both ADSL
and HDSL2 applications. They can supply a 39.2VP-P signal
into a 22Ω load while exhibiting very low distortion. T he
EL1503A also has a number of power saving features. The
IADJ pin can be used to set the maximum supply current and
the C0 and C1 pins can be us ed to digitally vary the supply
current to one of four modes. These modes include full
power, low power, terminate only and power down.
The EL1503A uses current-feedback type amplifiers, which
achieve a high slew rate while consuming moderate power.
They retain their frequency response over a wide range of
externally set gains. The EL1503A operates on ±5V to ±12V
supplies and consumes only 12.5mA per amplifier.
The device is supplied in a thermally-en hanced 20 Ld SOIC
(0.300”) and the small footprint (4x5mm) 24 Ld QFN
packages. Center pins on each side of the 20 Ld and 16 Ld
packages are used as ground connections and heat
spreaders. The QFN package has the potential for a low θJA
(<40°C/W) and dissipates heat by means of a thermal pad
that is soldered onto the PCB. All package options are
specified for operation over the full -40°C to +85°C
temperature range.
Features
High power ADSL driver
•39.2V
P-P differential output drive into 22Ω
•42.4V
P-P differential output drive into 65Ω
Driver 2nd/3rd harmonics of
-66dBc/-72dBc at 2VP-P into 100Ω differential
Supply current of 12.5mA per amplifier
Supply current control
Power saving modes
Standard surface-mount packages
Ultra-small QFN package
Pb-free plus anneal available (RoHS compliant)
Applications
ADSL line drivers
HDSL2 line drivers
Video distribution amplifiers
Pinouts EL1503A
(24 LD QFN)
TOP VIEW
EL1503A
[20 LD SOIC (0.300”)]
TOP VIEW
*GND pins are heat spreaders
19
18
17
16
15
14
13
24
23
22
21
20
8
9
10
11
12
1
2
3
4
5
6
7
THERMAL
PAD
NC
NC
VS-
NC
NC
NC
GND
NC
NC
VS+
NC
NC
NC
GND
VOUTA
VIN-A
NC
VIN-B
VOUTB
VIN+A
C1
C0
IADJ
VIN+B
1
2
3
4
16
15
14
13
5
6
7
12
11
9
8
10
20
19
18
17
-+ -+
POWER
CONTROL
LOGIC
AB
VIN-A
VOUTA
VS-
GND*
GND*
GND*
GND*
VIN+A
C1
C0
VIN-B
VS+
GND*
GND*
IADJ
VOUTB
GND*
GND*
VIN+B
NC
Data Sheet March 26, 2007
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002, 2003, 2005, 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
2FN7039.2
March 26, 2007
Ordering Information
PART NUMBER PART MARKING TAPE & REEL PACKAGE PKG. DWG. #
EL1503ACM EL1503ACM - 20 Ld SOIC (0.300") MDP0027
EL1503ACM-T13 EL1503ACM 13” 20 Ld SOIC (0.300") MDP0027
EL1503ACMZ (See Note) EL1503ACMZ - 20 Ld SOIC (0.300") (Pb-Free) MDP0027
EL1503ACMZ-T13 (See Note) EL1503ACMZ 13” 20 Ld SOIC (0.300") (Pb-Free) MDP0027
EL1503ACL 1503ACL - 24 Ld QFN MDP0046
EL1503ACL-T7 1503ACL 7” 24 Ld QFN MDP0046
EL1503ACL-T13 1503ACL 13” 24 Ld QFN MDP0046
EL1503ACLZ (See Note) 1503ACLZ - 24 Ld QFN (Pb-Free) MDP0046
EL1503ACLZ-T7 (See Note) 1503ACLZ 7” 24 Ld QFN (Pb-Free) MDP0046
EL1503ACLZ-T13 (See Note) 1503ACLZ 13” 24 Ld QFN (Pb-Free) MDP0046
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate
termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
EL1503A
3FN7039.2
March 26, 2007
s
Absolute Maximum Ratings (TA = +25°C)
VS+ to VS- Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .28V
VS+ Voltage to Ground . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +28V
VS- Voltage to Ground. . . . . . . . . . . . . . . . . . . . . . . . . .-28V to 0.3V
Input C0/C1 to Ground. . . . . . . . . . . . . . . . . . . . . . . . . .-0.3V to +7V
Driver VIN+ Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VS- to VS+
Current into any Input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8mA
Output Current from Driver (static) . . . . . . . . . . . . . . . . . . . . 100mA
Operating Temperature Range . . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-60°C to +150°C
Operating Junction Temperature . . . . . . . . . . . . . . .-40°C to +150°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Electrical Specifications VS = ±12V, RF = 1.5kΩ, RL= 65Ω, IADJ = C0 = C1 = 0V, TA = +25°C. Amplifiers tested separately.
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
SUPPLY CHARACTERISTICS
IS+(Full Pow er ) Positive Supply Current per Amplifier All outputs at 0V, C0 = C1 = 0V 10 12.5 16 mA
IS-(Full Power) Negative Supply Current per Amplifier All outputs at 0V, C0 = C1 = 0V -15 -11.5 -9 mA
IS+(Low Power) Positive Supply Current per Amplifier All outputs at 0V, C0 = 5V, C1 = 0V 7 9 11.5 mA
IS-(Low Power) Negative Supply Current per Amplifier All outputs at 0V, C0 =5V, C1 = 0V -10.5 -8 -6 mA
IS+(Terminate) Positive Supply Current per Amplifier All outputs at 0V, C0 = 0V, C1 = 5V 4 5.1 7 mA
IS-(Terminate) Negative Supply Current per Amplifier All outputs at 0V, C0 = 0V, C1 = 5V -6 -4 -3 mA
IS+(Power Down ) Positive Supply Current per Amplifier All outputs at 0V, C0 = C1 = 5V 0.75 1.05 1.7 mA
IS-(Power Down ) Negative Supply Current per Amplifier All outputs at 0V, C0 = C1 = 5V -0.5 -0.25 0.07 mA
IGND GND Supply Current per Amplifier All outputs at 0V -1 mA
INPUT CHARACTERISTICS
VOS Input Offset Voltage -30 30 mV
ΔVOS VOS Mismatch -15 15 mV
IB+ Non-Inverting Input Bias Current -15 15 µA
IB- Inverting Input Bias Current -50 50 µA
ΔIB-I
B- Mismatch -30 30 µA
ROL Transimpedance 0.4 0.8 MΩ
eNInput Noise Voltage 3.5 nV/Hz
iN-Input Noise Current 13 pA/Hz
VIH Input High Voltage C0 & C1 inputs 2.7 V
VIL Input Low Voltage C0 & C1 inputs 0.8 V
IIH1 Input High Current for C1C1 = 5V 1.5 8 µA
IIH0 Input High Current for C0C0 = 5V 0.75 4 µA
IIL Input Low Current for C1or C0C1 = 0V, C0 = 0V -1 1 µA
OUTPUT CHARACTERISTICS
VOUT Loaded Output Swing RL = 65Ω±10.3 ±10.6 V
RL = 22Ω±9.3 ±9.8 V
IOL Linear Output Current AV = 5, RL = 10Ω, f = 100kHz,
THD = --60dBc 450 mA
IOUT Output Current VOUT = 1V, RL = 1Ω1A
EL1503A
4FN7039.2
March 26, 2007
DYNAMIC PERFORMANCE
BW -3dB Bandwidth AV = +5 80 MHz
HD2 2nd Harmonic Distortion fC = 1MHz, RL = 100Ω, VOUT = 2VP-P -76 dBc
fC = 1MHz, RL = 25Ω, VOUT = 2VP-P -72 dBc
HD3 3rd Harmonic Distortion fC = 1MHz, RL = 100Ω, VOUT = 2VP-P -76 dBc
fC = 1MHz, RL = 25Ω, VOUT = 2VP-P -72 dBc
SR Slewrate VOUT from -8V to +8V Measured at ±4V 700 1100 V/µs
Electrical Specifications VS = ±12V, RF = 1.5kΩ, RL= 65Ω, IADJ = C0 = C1 = 0V, TA = +25°C. Amplifiers tested separately. (Continued)
PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT
Typical Performance Curves
FIGURE 1. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (FULL POWER MODE) FIGURE 2. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (FULL POWER MODE)
FIGURE 3. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (2/3 POWER MODE) FIGURE 4. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (2/3 POWER MODE)
1M 100M
20
GAIN (dB)
FREQUENCY (Hz)
15
10M
25
100K
VS=±12V
AV=10
RL=100Ω
RF=2.0kΩ
RF=2.43kΩ
RF=2.74kΩ
RF=1.82kΩ
RF=1.5kΩRF=1.3kΩ
1M 100M
20
GAIN (dB)
FREQUENCY (Hz)
15
10M
25
100K
RF=2.0kΩ
RF=2.4kΩ
RF=2.74kΩ
VS=±5V
AV=10
RL=100Ω
RF=1.3kΩ
RF=1.82kΩ
RF=1.5kΩ
1M 100M
20
GAIN (dB)
FREQUENCY (Hz)
15
10M
25
100K
VS=±12V
AV=10
RL=100ΩRF=1.5kΩ
RF=2.43kΩ
RF=2.74kΩ
RF=2.0kΩ
RF=1.82kΩ
RF=1.3kΩ
1M 100M
20
GAIN (dB)
FREQUENCY (Hz)
15
10M
25
100K
RF=1.82kΩ
RF=1.3kΩ
RF=2.0kΩ
RF=2.4kΩ
RF=1.5kΩ
RF=2.74kΩ
VS=±5V
AV=10
RL=100Ω
EL1503A
5FN7039.2
March 26, 2007
FIGURE 5. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (TERMINATE MODE) FIGURE 6. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (TERMINATE MODE)
FIGURE 7. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (FULL POWER MODE) FIGURE 8. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (FULL POWER MODE)
FIGURE 9. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (2/3 POWER MODE) FIGURE 10. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (2/3 POWER MODE)
Typical Performance Curves (Continued)
1M100M
20
GAIN (dB)
FREQUENCY (Hz)
15
10M
25
100K
RF=2.0kΩ
RF=2.43kΩ
RF=2.74kΩ
RF=1.82kΩ
VS=±12V
AV=10
RL=100Ω
1M 100M
20
GAIN (dB)
FREQUENCY (Hz)
15
10M
25
100K
RF=1.84kΩ
RF=2.0kΩRF=2.43kΩ
RF=2.74kΩ
VS=±5V
AV=10
RL=100Ω
1M 100M
14
GAIN (dB)
FREQUENCY (Hz)
9
10M
19
100K
RF=1.3kΩ
RF=2.0kΩ
RF=1.82kΩ
RF=2.4kΩ
RF=1.5kΩ
RF=2.74kΩ
VS=±12V
AV=5
RL=100Ω
1M 100M
14
GAIN (dB)
FREQUENCY (Hz)
9
10M
19
100K
RF=2.0kΩ
RF=1.82kΩ
RF=2.4k
RF=1.5kΩ
RF=2.74k
VS=±5V
AV=5
RL=100Ω
1M 100M
14
GAIN (dB)
FREQUENCY (Hz)
9
10M
19
100K
RF=1.3kΩ
RF=2.0kΩ
RF=1.82kΩ
RF=2.43kΩ
RF=1.5kΩ
RF=2.74kΩ
VS=±12V
AV=5
RL=100Ω
1M 100M
14
GAIN (dB)
FREQUENCY (Hz)
9
10M
19
100K
RF=1.5kΩ
RF=2.4kΩ
RF=2.0kΩ
RF=2.74kΩ
RF=1.82kΩ
VS=±5V
AV=5
RL=100Ω
EL1503A
6FN7039.2
March 26, 2007
FIGURE 1 1. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (TERMINATE MODE) FIGURE 12. DRIVER DIFFERENTIAL FREQUENCY
RESPONSE vs RF (TERMINATE MODE)
FIGURE 13. DRIVER INPUT VOL TAGE and FEEDBACK
CURRENT NOISE vs FREQUENCY FIGURE 14. SUPPLY CURRENT vs SUPPLY VOLTAGE
FIGURE 15. POSITIVE SUPPLY REJECTION vs FREQUENCY FIGURE 16. NEGATIVE SUPPLY REJECTION vs FREQUENCY
Typical Performance Curves (Continued)
1M 100M
14
GAIN (dB)
FREQUENCY (Hz)
9
10M
19
100K
RF=2.74kΩ
RF=2.43kΩ
RF=2.0kΩ
RF=1.82kΩ
VS=±12V
AV=5
RL=100Ω
1M 100M
14
GAIN (dB)
FREQUENCY (Hz)
9
10M
19
100K
RF=2.4kΩ
RF=2.0kΩ
RF=2.74kΩ
RF=1.82kΩ
VS=±5V
AV=5
RL=100Ω
eN (nV/Hz)
10
FREQUENCY (Hz)
1
10K
100
10
100
10
1
100 100K1K
iN (pA/Hz)
eN
iN
10
IS (mA)
VS (V)
0
25
41208
20
5
2610
15
IS- (FULL POWER)
I
S
+ (2/3 POWER)
I
S
- (2/3 POWER)
I
S
+
IS- (TERMINATE)
I
S
+ (FULL POWER)
-40
SUPPLY REJECTION (dB)
FREQUENCY (Hz)
-100
10M
0
10K 100K 100M1M
-20
-60
-80
RIGHT
DRIVER
LEFT
DRIVER
-40
SUPPLY REJECTION (dB)
FREQUENCY (Hz)
-100
10M
0
10K 100K 100M1M
-20
-60
-80
RIGHT
DRIVER
LEFT
DRIVER
EL1503A
7FN7039.2
March 26, 2007
FIGURE 17. OUTPUT IMPEDANCE vs FREQUENCY FIGURE 18. OUTPUT IMPEDANCE vs FREQUENCY
FIGURE 19. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (FUL L POWER) FIGURE 20. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (FULL POWER)
FIGURE 21. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (2/3 POWER) FIGURE 22. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE
Typical Performance Curves (Continued)
10
OUTPUT IMPEDANCE (Ω)
FREQUENCY (Hz)
0
100
100M10K 1M
1
100K 10M
TERMINATE
2/3 POWER
FULL POWER
VS=±12V
AV=1
RL=1.5kΩ
10
OUTPUT IMPEDANCE (Ω)
FREQUENCY (Hz)
0
100
100M10K 1M
1
100K 10M
FULL POWER
VS=±5V
AV=1
RL=1.5kΩTERMINATE
2/3 POWER
-45
-55
-65
-75
-85
1 5 9 131721
VOP-P (V)
HD (dB)
HD3
HD2
VS=±12V
AV=5
RL=100Ω
fC=1MHz
-40
-45
-70
-75
-85
123 5 78
VOP-P (V)
HD (dB)
-55
-80
HD3
HD2
-50
-60
-65
46
VS=±5V
AV=5
RL=100Ω
fC=1MHz
-50
-55
-60
-80
-85
1 5 9 131721
VOP-P (V)
HD (dB)
HD3
HD2
-65
-70
-75
VS=±5V
AV=5
RL=100Ω
fC=1MHz
-40
-50
-60
-70
-80
123 5 78
VOP-P (V)
HD (dB)
HD3
HD2
46
VS=±5V
AV=5
RL=100Ω
fC=1MHz
EL1503A
8FN7039.2
March 26, 2007
FIGURE 23. DIFFERENTIAL TOT AL HARMONIC DISTORTION
vs OUTPUT AMPLITUDE FIGURE 24. DIFFERENTIAL TOT AL HARMONIC DISTORTION
vs OUTPUT AMPLITUDE
FIGURE 25. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (FUL L POWER) FIGURE 26. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (FULL POWER)
FIGURE 27. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (2/3 POWER) FIGURE 28. DIFFERENTIAL HARMONIC DISTORTION vs
OUTPUT AMPLITUDE (2/3 POWER)
Typical Performance Curves (Continued)
-45
-50
-60
-70
-80
1 5 9 131721
VOP-P (V)
THD (dB)
-55
-65
-75
2/3 POWER
FULL POWER
VS=±12V
AV=5
RL=100Ω
fC=1MHz
-40
-50
-60
-70
-80
123 5 78
VOP-P (V)
THD (dB)
46
2/3 POWER
FULL POWER
VS=±5V
AV=5
RL=100Ω
fC=1MHz
-74
HD (dB)
VOP-P (V)
-78
-60
19113
-62
-76
515
-72
-68
9
-64
-66
-70
3711 17
HD3
HD2
VS=±12V
AV=5
RL=100Ω
fC=1MHz
-72
HD (dB)
VOP-P (V)
-80
-56
614
-60
-76
25
-68
-64
3
HD3
HD2
VS=±5V
AV=5
RL=100Ω
fC=1MHz
-66
HD (dB)
VOP-P (V)
-70
-54
19113
-68
515
-64
-60
9
-56
-58
-62
3711 17
HD3
HD2
VS=±12V
AV=5
RL=100Ω
fC=1MHz
-68
HD (dB)
VOP-P (V)
-72
-58
614
-60
-70
25
-66
-64
3
-62
HD3
HD2
VS=±5V
AV=5
RL=100Ω
fC=1MHz
EL1503A
9FN7039.2
March 26, 2007
FIGURE 29. DIFFERENTIAL TOT AL HARMONIC DISTORTION
vs OUTPUT AMPLITUDE FIGURE 30. DIFFERENTIAL TOT AL HARMONIC DISTORTION
vs OUTPUT AMPLITUDE
FIGURE 31. DIFFERENTIAL BANDWIDTH vs SUPPLY
VOLTAGE FIGURE 32. DIFFERENTIAL PEAKING vs SUPPLY VOLTAGE
FIGURE 33. IS vs RSET FIGURE 34. IS vs RSET
Typical Performance Curves (Continued)
-63
THD (dBc)
VOP-P (V)
-67
-55
719115
-57
-65
31117
-61
-59
9513
2/3 POWER
FULL POWER
VS=±12V
AV=5
RL=100Ω
fC=1MHz
-63
THD (dBc)
VOP-P (V)
-67
-55
471
-57
-65
26
-61
-59
53
2/3 POWER
FULL POWER
VS=±5V
AV=5
RL=100Ω
fC=1MHz
25
BW (MHz)
±VS (V)
10
35
5
30
20
2/3 POWER MODE
TERMINATE MODE
FULL POWER MODE
15
6 7 8 9 10 11 12
AV=10
RF=1.82kΩ
2.0
PEAKING (dB)
±VS (V)
0
3.5
5
3.0
1.5
2.5
2/3 POWER MODE
TERMINATE MODE
FULL POWER MODE
0.5
6 7 8 9 101112
1.0
AV=10
RF=1.82kΩ
410
±IS (mA)
RSET (kΩ)
0
6
25
0
20
15
10
5
28
IS+ (FULL POWER)
IS- (FULL POWER)
IS+ 2/3 POWER)
IS- 2/3 POWER)
IS+ (TERMINATE)
IS- (TERMINATE)
VS = ±12V
RSET to GND
410
±IS (mA)
RSET (kΩ)
0
6
25
0
20
15
10
5
28
VS = ±5V
RSET to GND
IS+ (FULL POWER)
IS- (FULL POWER)
IS+ 2/3 POWER)
IS- 2/3 POWER)
IS+ (TERMINATE)
IS- (TERMINATE)
EL1503A
10 FN7039.2
March 26, 2007
FIGURE 35. IS vs ISET FIGURE 36. IS vs ISET
FIGURE 37. POWER DISSIP A TION vs AMBIENT
TEMPERATURE for VARIOUS MOUNTED θJAsFIGURE 38. POWER DISSIP A TION vs AMBIENT
TEMPERATURE
Typical Performance Curves (Continued)
10
±IS (mA)
ISET (µA)
0
25
100 5000 300
20
5
200 400
15
I
S
- (FULL POWER)
I
S
+ (2/3 POWER)
I
S
- (2/3 POWER)
I
S
+ (TERMINATE)
I
S
- (TERMINATE)
I
S
+ (FULL POWER)
VS = ±12V
10
±IS (mA)
ISET (µA)
0
25
100 5000 300
20
5
200 400
15
I
S
- (FULL POWER)
I
S
+ (2/3 POWER)
I
S
- (2/3 POWER)
I
S
+ (TERMINATE)
I
S
- (TERMINATE)
I
S
+ (FULL POWER)
VS = ±12V
0 100
0.5
POWER DISSIPATION (W)
AMBIENT TEMPERATURE (°C)
0
40
4.5
-40 20-20 60 80
3.5
3.0
2.5
2.0
1.5
1.0
4.0 θJA = 30°C/W
θJA = 43°C/W
θJA = 53°C/W
θJA = 80°C/W
1500 25 50 75 100 125
AMBIENT TEMPERATURE (°C)
POWER DISSIPATION (W)
3.0
0
0.5
1.0
1.5
2.0
2.5
85
2.703W
θ
JA
=37°C/W
QFN24
POWER DISSIPATION & THERMAL RESISTANCE USING
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LA YER) TEST BOARD, QFN EXPOSED
DIEPAD SOLDERED TO PCB PER JESD51-5
EL1503A
11 FN7039.2
March 26, 2007
Test Circuit
1
2
3
4
16
15
14
13
5
6
7
12
11
9
8
10
20
19
18
17
-+
-+
RS
100
1W
332Ω
R3
56Ω
1/2W
R7
1.5kΩ
R16
1.5kΩ
R4
56Ω
1/2W
RIGHT
DRIVER
OUT
RIGHT
DRIVER
IN
VS+
GND
R17
51Ω
5µF 0.1µF
RSET
C0
C1
R2
51Ω
LEFT
DRIVER
IN
LEFT
DRIVER
OUT
GND
0.1µF F
C2C1
AB
1
2
3
4
16
15
14
13
5
6
7
12
11
9
8
10
20
19
18
17
VIN-A VIN-B
C0
C1
VIN+A
GND
GND
GND
GND
VS-
VOUTAVOUTB
VS+
GND
GND
GND
GND
VIN+B
IADJ
NC
TANTALUM TANTALUM
EL1503A
12 FN7039.2
March 26, 2007
Pin Descriptions
20 Ld SOIC
(0.300") 24 Ld QFN PIN NAME FUNCTION CIRCUIT
123V
IN-A Channel A Inverting Input
CIRCUIT 1
224V
OUTA Ch annel A Output (Reference Circuit 1)
33V
S- Negative Supply
4, 5, 6, 7 7 GND Ground Connection
88V
IN+A Channel A Non-Inverting Input
CIRCUIT 2
99C
1Current Control Bit 1
CIRCUIT 3
10 10 C0Current Control Bit 0 (Reference Circuit 3)
11 1, 2, 4, 5, 6, 14,
15, 16, 18, 19,
22
NC Not Connected
12 11 IADJ Supply Current Control Pin
CIRCUIT 4
13 12 VIN+B Channel B Non-Inverting Input (Reference Circuit 2)
14, 15, 16, 17 13 GND Ground Connection
18 17 VS+ Positive Supply
19 20 VOUTB Channel B Output (Reference Circuit 1)
20 21 VIN-B Channel B Inverting Input (Reference Circuit 1)
- 7 Reserve for Future Use Internally Unconnected
VS+
VS-
VS+
6.7V
VS+
EL1503A
13 FN7039.2
March 26, 2007
Applications Information
The EL1503A consists of two high-power line driver
amplifiers that can be connected for full duplex differential
line transmission. The amplifiers are designed to be used
with signals up to 4MHz and produce low distortion levels. A
typical interface circuit is shown in Figure 39 below.
The amplifiers are wired with one in positive gain and the
other in a negative gain configura tion to generate a
differential output for a single-ended input. They will exhibit
very similar frequency responses for gains of three or
greater and thus generate very small common-mode outputs
over frequency, but for low gains the two drivers RF's need
to be adjusted to give similar frequency responses. The
positive-gain driver will generally exhibit more bandwidth and
peaking than the negative-gain driver.
If a differential signal is available to the drive amplifiers, they
may be wired so:
Each amplifier has identical positive gain connections, and
optimum common-mode rejection occurs. Further, DC input
errors are duplicated and create common-mode rather than
differential line errors.
Input Connections
The EL1503A amplifiers are somewhat sensitive to source
impedance. In particular, they do not like being driven by
inductive sources. More than 100nH of source impedance
can cause ringing or even oscillations. This inductance is
equivalent to about 4” of unshielded wiring, or 6” of
unterminated transmission line. Normal high-fre quency
construction obviates any such problem.
Power Supplies & Dissipation
Due to the high power drive capability of the EL1503A, much
attention needs to be paid to power dissipation. The power
that needs to be dissipated in the EL1503A has two main
contributors. The first is the quiescent current dissipation.
The second is the dissipation of the output stage.
The quiescent power in the EL1503A is not constant with
varying outputs. In reality, 7mA of the 12.5mA needed to
power each driver is converted in to output current.
Therefore, in the equation be low we should subtract the
average output current, IO, or 7mA, whichever is the low est.
We’ll call this term IX.
Therefore, we can determine a quiescent curre nt with the
equation:
where:
VS is the supply voltage (VS+ to VS-)
IS is the maximum quiescent supply current (IS+ + IS-)
IX is the lesser of IO or 7mA (generally IX = 7mA)
The dissipation in the output stage has two main
contributors. Firstly, we have the average voltage drop
across the output transistor and secondly, the average
output current. For minimal power dissipation, the user
should select the supply voltage and the line transformer
ratio accordingly. The supply voltage should be kept as low
as possible, while the transformer ratio should be selected
so that the peak voltage required from the EL1503A is close
to the maximum available outpu t swing. There is a trade of
however with the selection of transformer ratio. As the ratio
is increased, the receive signal available to the receivers is
reduced.
Once the user has selected the transformer ratio, the
dissipation in the output stages can be selected with the
following equation:
where:
VS is the supply voltage (VS+ to VS-)
VO is the average output voltage per channel
IO is the average output current per channel
The overall power dissipation (PDISS) is obtained by adding
PDquiescent and PDtransistor.
FIGURE 39. TYPICAL LINE INTERFACE CONNECTION
-
+
-
+
-
+
-
+
RECEIVE
OUT -
RECEIVE
OUT +
DRIVER
INPUT
RG
RF
RF
RFR
RIN
R
RIN
RF
ROUT
ROUT
LINE +
RECEIVE
AMPLIFIERS
ZLINE
LINE -
FIGURE 40. DRIVERS WIRED FOR DIFFERENTIAL INPUT
-
+
-
+
2RG
RF
RF
PDquiescent VSIS2IX
()×=
PDtransistors 2I
OVS
2
-------
×× VO
=
EL1503A
14 FN7039.2
March 26, 2007
Then, the θJA requirement needs to be calculated. This is
done using the equation:
where:
TJUNCT is the maximum die temperature (150°C)
TAMB is the maximum ambient temperature
PDISS is the dissipation calculated above
θJA is the junction to ambient thermal resistance for the
package when mounted on the PCB
This θJA value is then used to calculate the area of copper
needed on the board to dissipate the power. The graph
below show various θJA for the SO20 mounted on different
copper foil areas.
A separate application note details the 24 Ld QFN PCB
design considerations.
Single Supply Operation
The EL1503A can also be powered from a single supply
voltage. When operating in this mode, the GND pins can still
be connected directly to GND. To calculate power
dissipation, the equations in the previous section should be
used, with VS equal to half the supply rail.
EL1503A PCB Design
A separate application note details the 24 Ld QFN PCB
design considerations. The SOIC power packages
(20 lea ds) ar e designed so that heat may be conducted
away from the device in an efficient manner . To disperse this
heat, the center leads (4 per side for the 20 lead and 2 per
side for the 16 lead) are internally connected to the mounting
platform of the die. Heat flows through the leads into the
circuit board copper , then spreads and convects to air . Thus,
the ground plane on the component side of the board
becomes the heatsink. This has proven to be a very effective
technique, but several aspects of board layout should be
noted. First, the heat shoul d not be shunted to internal
copper layers of the board nor backside foil, since the
feedthroughs and fiberglass of the board are not very
thermally conductive. To obtain the best thermal resistance
of the mounted part, θJA, the topside copper ground plane
should have as much area as possible and be as thick as
practical. If possible, the solder mask should be cut away
from the EL1503A to improve thermal resistance. Finally,
metal heatsinks can be placed against the board close to the
part to draw heat toward the chassis.
Output Loading
While the drive amplifiers can output in excess of 500mA
transiently, the internal metallization is not designed to carry
more than 100mA of steady DC current and there is no
current-limit mechanism. This allows safely driving rms
sinusoidal currents of 2 X 100mA, or 200mA. This current is
more than that required to drive line impedances to large
output levels, but output short circuits cannot be tolerated.
The series output resistor will usually limit currents to safe
values in the event of line shorts. Driving lines with no series
resistor is a serious hazard.
The amplifiers are sensitive to capacitive loading. More than
25pF will cause peaking of th e frequency response. The
same is true of badly terminated lines connected without a
series matching resistor.
Power Supplies
The power supplies should be well bypassed close to the
EL1503A. A 3.3µF tantalum capacitor for each supply works
well. Since the load currents are differential, they should not
travel through the board copper and set up ground loops that
can return to amplifier inputs. Due to the class AB output
stage design, these currents have heavy harmonic content.
If the ground terminal of the positive and negative bypass
capacitors are connected to each other directl y an d then
returned to circuit ground, no such ground loops will occur.
This scheme is employed in the layout of the EL1503A
demonstration board, and documentation can be obtained
from the factory.
Feedback Resistor Value
The bandwidth and peaking of the amplifiers varies with
supply voltage somewhat and with gain se ttings. The
feedback resistor values can be adjusted to produce an
optimal frequency response. Here is a series of resistor
values that produce an optimal driver frequency response
(1dB peaking) for different supply voltages and gains:
θJA TJUNCT TAMB
()
PDISS
-------------------------------------------------
=
012 910678345
55
50
45
40
35
30
FIGURE 41. THERMAL RESIST ANCE of 20 Ld SOIC (0.300")
EL1503A vs BOARD COPPER AREA
MOUNTED DEVICE θJA (°C/W)
Note: 2oz. COPPER USED
TOP FOIL ONLY-WITH SOLDER MASK
TOP FOIL-WITH 0.45IN2 BOTTOM
FOIL WITH MANY FEEDTHROUGHS
TOP FOIL ONLY-NO SOLDER MASK
AREA OF CIRCUIT BOARD HEAT SINK (in2)
TABLE 1. OPTIMUM DRIVER FEEDBACK RESISTOR for
VARIOUS GAINS and SUPPLY VOLTAGES
SUPPLY
VOLTAGE
DRIVER VOLTAGE GAIN
2.5 5 10
±5V
±12V 2.7k
2.2k 2.2k
2.0k 2.0k
2.0k
EL1503A
15
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No lice nse is gran t ed by i mpli catio n or other wise u nder an y p a tent or patent rights of Int ersi l or it s sub sidi aries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN7039.2
March 26, 2007
Power Control Function
The EL1503A contains two forms of power control operation.
Two digital inputs, C0 and C1, can be used to control the
supply current of the EL1503A drive ampli fi ers. As the
supply current is reduced, the EL1503A will start to exhibit
slightly higher levels of distortio n and the frequency
response will be limited. The 4 power modes of the EL1503A
are set up as shown in the table 2.
Another method for controlling the power consumption of the
EL1503A is to connect a resistor from the IADJ pin to ground.
When this pin is grounded (the normal state), the supply
current per channel is as per the specifications table on page
3. When a resistor is inserted, the supply curre nt is scaled
according to the “IS vs RSET” graphs on page 10 in the
Performance Curves section.
Both methods of power control can be used simultaneously.
In this case, positive and negative supply currents (per amp)
are given by the equations belo w:
TABLE 2. POWER MODES of the EL1503A
C1C0OPERATION
00I
S full power mode (CO or CP)
012/3 I
S power mode (CO or CP)
101/3 I
S terminate only mode
1 1 Power down
IS+1mAC(123) 12.5mA
1(RSET 1k)÷+
-------------------------------------------
××
C(013) 12.5mA
1(RSET 1k)÷+
-------------------------------------------
××
+
+
=
IS-0C(123) 12.5mA
1(RSET 1k)÷+
-------------------------------------------
××
C0
(13) 12.5mA
1(RSET 1k)÷+
-------------------------------------------
××
+
+
=
EL1503A
16 FN7039.2
March 26, 2007
EL1503A
Small Outline Package Family (SO)
GAUGE
PLANE
A2
A1 L
L1
DETAIL X 4° ±4°
SEATING
PLANE
eH
b
C
0.010 BMCA
0.004 C
0.010 BMCA
B
D
(N/2)
1
E1
E
NN (N/2)+1
A
PIN #1
I.D. MARK
h X 45°
A
SEE DETAIL “X”
c
0.010
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
SYMBOL
INCHES
TOLERANCE NOTESSO-8 SO-14
SO16
(0.150”)
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
A 0.068 0.068 0.068 0.104 0.104 0.104 0.104 MAX -
A1 0.006 0.006 0.006 0.007 0.007 0.007 0.007 ±0.003 -
A2 0.057 0.057 0.057 0.092 0.092 0.092 0.092 ±0.002 -
b 0.017 0.017 0.017 0.017 0.017 0.017 0.017 ±0.003 -
c 0.009 0.009 0.009 0.011 0.011 0.011 0.011 ±0.001 -
D 0.193 0.341 0.390 0.406 0.504 0.606 0.704 ±0.004 1, 3
E 0.236 0.236 0.236 0.406 0.406 0.406 0.406 ±0.008 -
E1 0.154 0.154 0.154 0.295 0.295 0.295 0.295 ±0.004 2, 3
e 0.050 0.050 0.050 0.050 0.050 0.050 0.050 Basic -
L 0.025 0.025 0.025 0.030 0.030 0.030 0.030 ±0.009 -
L1 0.041 0.041 0.041 0.056 0.056 0.056 0.056 Basic -
h 0.013 0.013 0.013 0.020 0.020 0.020 0.020 Reference -
N 8 14 16 16 20 24 28 Reference -
Rev. M 2/07
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
17 FN7039.2
March 26, 2007
EL1503A
QFN (Quad Flat No-Lead) Package Family
PIN #1
I.D. MARK
2
1
3
(N-2)
(N-1)
N
(N/2)
2X
0.075
TOP VI EW
(N/2)
NE
2
3
1
PIN #1 I.D.
(N-2)
(N-1)
N
b
L
N LEADS
BOTTOM VIEW
DETAIL X
PLANE
SEATING
N LEADS
C
SEE DETAIL "X"
A1 (L)
N LEADS
& EXPOSED PAD
0.10
SIDE VIEW
0.10 BA
MC
C
B
A
E
2X
0.075 C
D
3
5
7
(E2)
(D2)
e
0.08 C
C
(c)
A2
C
MDP0046
QFN (QUAD FLAT NO-LEAD) PACKAGE FAMILY
(COMPLIANT TO JEDEC MO-220)
SYMBOL
MILLIMETERS
TOLERANCE NOTESQFN44 QFN3 QFN32
A 0.90 0.90 0.90 0.90 ±0.10 -
A1 0.02 0.02 0.02 0.02 +0.03/-0.02 -
b 0.25 0.25 0.23 0.22 ±0.02 -
c 0.20 0.20 0.20 0.20 Reference -
D 7.00 5.00 8.00 5.00 Basic -
D2 5.10 3.80 5.80 3.60/2.48 Reference 8
E 7.00 7.00 8.00 6.00 Basic -
E2 5.10 5.80 5.80 4.60/3.40 Reference 8
e 0.50 0.50 0.80 0.50 Basic -
L 0.55 0.40 0.53 0.50 ±0.05 -
N 44 38 32 32 Reference 4
ND 11 7 8 7 Reference 6
NE 11 12 8 9 Reference 5
SYMBOL
MILLIMETERS TOLER-
ANCE NOTESQFN28 QFN2 QFN20 QFN16
A 0.90 0.90 0.90 0.90 0.90 ±0.10 -
A1 0.02 0.02 0.02 0.02 0.02 +0.03/
-0.02 -
b 0.25 0.25 0.30 0.25 0.33 ±0.02 -
c 0.20 0.20 0.20 0.20 0.20 Reference -
D 4.00 4.00 5.00 4.00 4.00 Basic -
D2 2.65 2.80 3.70 2.70 2.40 Reference -
E 5.00 5.00 5.00 4.00 4.00 Basic -
E2 3.65 3.80 3.70 2.70 2.40 Reference -
e 0.50 0.50 0.65 0.50 0.65 Basic -
L 0.40 0.40 0.40 0.40 0.60 ±0.05 -
N 28 24 20 20 16 Reference 4
ND 6 5 5 5 4 Reference 6
NE 8 7 5 5 4 Reference 5
Rev 11 2/07
NOTES:
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Tiebar view shown is a non-functional feature.
3. Bottom-side pin #1 I.D. is a diepad chamfer as shown.
4. N is the total number of terminals on the device.
5. NE is the number of terminals on the “E” side of the package
(or Y-direction).
6. ND is the number of terminals on the “D” side of the package
(or X-direction). ND = (N/2)-NE.
7. Inward end of terminal may be square or circular in shape with radius
(b/2) as shown.
8. If two values are listed, multiple exposed pad options are available.
Refer to device-specific datasheet.