ABB Semiconductors AG reserves the right to change specifications without notice.
V
DSM = 6500
V
ITAVM = 350
A
ITRMS = 550
A
ITSM = 4500
A
V
T0 =1.20
V
r
T= 2.300 mΩ
ΩΩ
Ω
Phase Control Thyristor
5STP 03X6500
D
oc
. N
o
.
5S
YA1
003
-
0
4
Sep
.
0
1
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blockin
g
Part Number 5STP 03X6500 5STP 03X6200 5STP 03X5800 Conditions
VDSM VRSM 6500 V 6200 V 5800 V f = 5 Hz, tp = 10ms
VDRM VRRM 5600 V 5300 V 4900 V f = 50 Hz, tp = 10ms
VRSM1 7000 V 6700 V 6300 V tp = 5ms, single pulse
IDSM ≤ 150 mA VDSM
IRSM ≤ 150 mA VRSM
Tj = 125°C
dV/dtcrit 1000 V/µs Exp. to 0.67 x VDRM, Tj = 125°C
VDRM/ VRRM are equal to VDSM/ VRSM values up to Tj = 110°C
Mechanical data
FMMounting force nom. 10 kN
min. 8 kN
max. 12 kN
aAcceleration
Device unclamped
Device clamped
50
100
m/s2
m/s2
mWeight 0.4kg
DSSurface creepage distance 38 mm
DaAir strike distance 21 mm
5STP 03X6500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01 page 2 of 5
On-state
ITAVM Max. average on-state current 350 A Half sine wave, TC = 70°C
ITRMS Max. RMS on-state current 550 A
ITSM Max. peak non-repetitive 4500 A tp
=
10 ms Tj = 125°C
surge current 4850 A tp
=
8.3 ms After surge:
I2t Limiting load integral 101 kA2stp
=
10 ms VD = VR = 0V
98 kA2stp
=
8.3 ms
VTOn-state voltage 3.50 V IT
=
1000 A
VT0 Threshold voltage 1.20 V IT
=
300 - 900 A Tj = 125°C
rTSlope resistance 2.300 mΩ
IHHolding current 30-80 mA T
j
=
25°C
15-60 mA T
j
=
125°C
ILLatching current 80-500 mA T
j
=
25°C
50-200 mA T
j
=
125°C
Switching
di/dtcrit Critical rate of rise of on-state 100 A/µs Cont. f = 50 Hz VD ≤ 0.67⋅VDRM , Tj = 125°C
current 200 A/µs ITRM = 1000 A60 sec.
f = 50Hz IFG = 2 A, tr = 0.5 µs
tdDelay time ≤3.0 µs VD = 0.4⋅VDRM IFG = 2 A, tr = 0.5 µs
tqTurn-off time ≤700 µs VD ≤ 0.67⋅VDRM ITRM = 1000 A, Tj = 125°C
dvD/dt = 20V/µs VR > 200 V, diT/dt = 1 A/µs
Qrr Recovery charge min 900 µAs
max 2000 µAs
Triggering
VGT Gate trigger voltage 2.6 V Tj = 25°
IGT Gate trigger current 400 mA Tj = 25°
VGD Gate non-trigger voltage 0.3 V VD =0.4 x VDRM
IGD Gate non-trigger current 10 mA VD = 0.4 x VDRM
VFGM Peak forward gate voltage 12 V
IFGM Peak forward gate current 10 A
VRGM Peak reverse gate voltage 10 V
PGGate power loss 3 W
5STP 03X6500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01 page 3 of 5
Thermal
Tjmax Max. operating junction temperature
range
125 °C
Tstg Storage temperature range -40…140 °C
RthJC Thermal resistance 85 K/kW Anode side cooled
junction to case 95 K/kW Cathode side cooled
45 K/kW Double side cooled
RthCH Thermal resistance case to 15 K/kW Single side cooled
heat sink 7.5 K/kW Double side cooled
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z
n
1i
t/-
ithJC i
å
=
τ
i1234
Ri(K/kW) 26.07 12.16 3.37 3.1
τi(s) 0.6439 0.0812 0.0161 0.0075
Fig. 1 Transient thermal impedance junction to case.
Fig. 2 On-state characteristics. Fig. 3 On-state characteristics.
Tj=125°C, 10ms half sine
5STP 03X6500
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1003-04 Sep. 01 page 4 of 5
Fig. 4 On-state power dissipation vs. mean on-
state current. Turn - on losses excluded.
Fig. 5 Max. permissible case temperature vs.
mean on-state current.
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
Fig. 7 Surge on-state current vs. number of
pulses. Half-sine wave, 10 ms, 50Hz.
5STP 03X6500
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1003-04 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss.
Fig. 10 Recovery charge vs. decay rate of on-
state current.
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current.
